Improved characteristics for Pd nanocrystal memory with stacked HfAlO–SiO2 tunnel layer

Stacked HfAlO-SiO₂ tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO₂ tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO₂ tunnel layer. Owing to the thermally induced traps in HfAlO-SiO₂ films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO₂/Pd NCs/1.5 nm-HfAlO/3.5 nm-SiO₂/Si structure. A N₂ plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO₂.     

RC6中不同固定循环移位对差分分析的影响

论文首先讨论了不同的固定循环移位对RC6-I(用恒等函数代替平方函数的变体)的影响,从理论上证明了当固定循环移位的取值为lgw时,RC6-I抗差分分析的效果最好。     

射频同轴电缆特性阻抗测量方法的探讨

特性阻抗是设计和选用射频同轴电缆时很重要的电气参数。从工程应用出发,介绍几种在生产中常用的特性阻抗测量方法。经过实测比较后,特别推荐一种便捷、实效的通过测量单个连接器电压驻波比获得射频同轴电缆特性阻抗的方法。     

非接触电能传输系统松耦合变压器传输特性的研究

本文是对基于非接触感应电能传输技术的全桥谐振变换器的传输特性进行的研究.松耦合变压器是非接触电能传输系统中的关键部件,本文首先分析了松耦合变压器与传统紧耦合变压器的区别进而提出原副边补偿问题,其次计算出串串补偿和串并补偿电容的选取,再次计算当系统工作在谐振状态时电压的放大倍数并得出负载特性,最后通过PSpice软件搭建电路并仿真,证明分析和结论的正确性.     

D形内包层掺Yb3+光纤激光器动态特性的研究

对LD抽运的D形内包层掺Yb3 + 光纤激光器的动态特性进行了实验研究。在单镜和双镜两种腔结构中 ,研究了激光器的动态特性。在单镜腔结构中 ,激光器表现出很强的自脉动行为 ,脉冲宽度为微秒量级。随着抽运功率的增强 ,开始出现更精细的结构 ,周期不规则 ,脉宽几十纳秒 ;在双镜腔结构中 ,自脉冲被有效地抑制 ,在抽运功率较大时 ,在直流强度上叠加了周期为 2 0 0ns ,脉宽约 10ns稳定的脉冲序列。双镜腔的激光稳定性较单镜腔有所改善 ,激光阈值功率明显下降。     

合成孔径雷达噪声干扰技术研究

对合成孔径雷达实施噪声干扰，可以在SAR图像上产生斑点，破坏雷达对目标的检测。首先给出了SAR雷达干扰方程，然后从图像特征检测的角度出发，推导了对其进行有效压制所需的干信比，最后给出了干扰功率的计算实例。     

海洋环境噪声数据处理及时空特性研究

海洋环境噪声是水声信道中的一种干扰背景场,限制水声设备性能发挥。针对这一问题,文中对实测海洋环境噪声数据进行数据处理得到1/3倍频程结果,并进行适当的时空特性研究,得到该研究海区的整体环境噪声水平,可以为水声设备的设计应用提供必要的依据,也为更广泛的海洋环境噪声数据的分析和应用奠定了重要基础。     

雷达对通信系统的干扰特性

对雷达的辐射特性进行了阐述，分析了其对通信系统的干扰因素，提出了干扰预测方程和对系统进行管理的有关技术措施。     

A complete resistance extraction methodology and circuit models for typical TSV structures

Through-silicon via (TSV) is one of the key technologies on three-dimensional integration packaging. In this article, an experimental methodology with circuit models was proposed for electrical characteristic tests on typical TSV structures. To this end, self-developed test patterns such as the via chains, the snake interconnections and the Kelvin structures with different dimensions were designed and manufactured. Suitable electrical measurement methodologies were next employed to characterise the element behaviours of the patterns. Based on the experimental data, electrical circuit models for the TSV structures were introduced and the parameters of the model were exacted. The validity and accuracy of the electrical model were finally verified and the TSV characteristic measurements can be performed through a simpler process.     

基于时间序列提取信号特征的通用自动标检软件开发

为推行精益生产,提出一种基于时间序列提取信号特征值的通用自动标检软件开发的方法。从自动标定/ 检验工装通用架构及基于时间序列提取信号特征值2 方面,阐述基于多核多线程时间片轮转调度及依据既定信号类 型,基于分段时间序列借助约简算法快速提取信号特征值。结果表明：该方法在既定时段能可靠完成约定产品的标 定、检验与功能测试,优化生产排程,缩减约定产品生产周期。