低水分抗热震高铝可塑料在加热炉上的应用

用矾土作为主原料,选择适当结合剂和添加剂,引入微粉技术,采用真空炼泥等工艺手段,研制成低水分抗热震高铝可塑料。该制品用作热媒加热炉衬里,显示出良好的耐高温和耐热冲击性能。     

泥页岩井壁稳定研究及在临盘地区的应用

从岩石力学和物理化学两个主要因素简要分析了井壁失稳的机理，指出泥页岩井壁失稳是由力学与化学两方面因素共同作用的结果。钻井液与泥页岩存在化学势差，并改变了井壁附近的孔隙压力，降低岩石强度。借助于井壁处有效应力的变化,将泥页岩与钻井液相互作用时页岩水化所产生的力学效应与纯力学效应结合起来，计算出任意井斜方位井眼围岩应力状态，利用测井资料求出有关岩石力学参数和Mohr Couloumb准则，计算得出防塌的临界钻井液密度。     

RHT系列渣油加氢催化剂在胜利炼油厂VRDS装置上的工业应用

介绍由北京石油化工研究院研制、开发、用于渣油加氢装置固定床反应器的RHT系列催化剂在胜利炼油厂VRDS装置的首次工业应用情况。该催化剂采用自行开发的级配路线,较好地结合了脱金属剂、脱硫剂、脱氮剂的性能特点,使整个运行周期的催化剂活性和稳定性达到较好地匹配,已达到同类进口催化剂的水平。     

几种酚类抗氧剂在润滑油中的应用

采用旋转氧弹法、高压差示扫描量热法等方法研究了5种酚类抗氧剂对6种润滑油基础油氧化安定性的改善效果。结果表明:向加氢基础油中加入0.25%(质量分数)抗氧剂2246-S和RHY510(含硫酚类抗氧剂),可使HVIWH125,HVIWH150,HVIWH500,KN4006,KN40105种润滑油基础油的诱导期由27～88min提高到226～397min;使HVIWH125,HVIWH150,HVIWH300,HVIWH500,KN4006,KN40106种润滑油基础油的起始氧化温度由193.34～198.90℃提高到205.48～230.27℃。     

地下埋藏式钢岔管抗外压稳定性分析

考虑了钢岔管与混凝土垫层的初始缝隙和初始几何缺陷,给出了一套地下埋藏式钢岔管抗外压稳定性的三维有限元分析和求解方法。采用该方法分析某工程实例,将其成果与阿氏公式计算的结果进行了比较,证明了该方法的可行性,并得到一些对工程设计有参考价值的成果。     

添加剂对工业齿轮油性能影响的研究

研究了硫化烯烃、磷酸酯胺盐、硫磷酸酯极压抗磨剂,含氮杂环衍生物多功能添加剂和防锈剂等,对工业齿轮油抗乳化性能、极压抗磨性能、防锈性能的影响;以及硫化烯烃、磷酸酯盐极压抗磨剂与含氮杂环衍生物多功能添加剂之间的协和效应。试验结果表明:1.2%~1.6%复合添加剂调制的CKD220工业齿轮油中,磷酸脂盐的正确选用可以提高齿轮油的抗乳化性能、防锈性能和减少防锈剂用量。硫化烯烃与磷酸脂盐、含氮杂环衍生物多功能添加剂的合理组合,可以提高齿轮油的极压抗磨性能和防锈性能,减少添加剂总加剂量。     

用于磁场测量的高精度500A/30V零压开关直流稳流电源

研制了一种带有无源辅助网络的全桥移相脉宽调制零压开关(FB PSPWMZVS)高精度磁铁稳流电源,并在电磁铁磁场测量中得到应用,其电流稳定度在8h内优于±1×10-4。     

Expanding the analytical potential of channel locational probability maps using cellular statistics

The planimetric shifts in channel location of large alluvial rivers are a critical component in the creation of diverse structures and functions in riverine habitats. Engineered management schemes must also compensate for this type of channel change to protect resources and maintain navigation channels. The stability of the Lower Mississippi River channel was assessed through an analysis of historical records of channel position produced and archived by the United States Army Corps of Engineers. Channel location was recorded for the years 1765, 1820, 1881, 1915, 1930, 1937, 1960 and 1970. Channel stability was measured by two introduced metrics on a cell‐by‐cell basis: (1) the standard deviation of Euclidean distance to a channel cell for the entire period of record, and (2) the rate of Euclidean distance change between years in the period of record. At a coarse spatial scale, channel instability increased in the downstream direction. The variability of channel stability also increased in the downstream direction. Analysis of this variability identified alternating areas of high and low stability occurring with greater frequency as distance downstream increased. These findings are validated by past studies of channel stability along the Lower Mississippi River. As a result, the proposed metrics provide a consistent, quantitative, efficient and cost‐effective means of identifying areas of channel instability at several spatial scales. Copyright © 2006 John Wiley & Sons, Ltd.     

A closed loop exponential feeding law: Invariance and global stability analysis

This article addresses the computation of invariant control laws [A. Fradkov, I. Miroshnik, V. Nikiforov, Nonlinear and Adaptive Control of Complex Systems, Kluwer, 1999] for fed-batch fermenters represented by two standard models. It will be shown how to derive partial state feedbacks that, assuming ideal conditions and perfect model, keep the specific growth rate μ constant provided the initial conditions are adequate. The invariant control law is the closed loop version of the exponential feeding already suggested in several references as shown later. The paper presents an analysis of invariance and a study of global stability within the framework of partial stability. That is, stability with respect to some of the state variables. This enables us to treat the case with Haldane-like or non-monotonous kinetics.     

Towards implementation of a nickel silicide process for CMOS technologies

In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices. We first present some of the limitations imposed on the current cobalt silicide process because of the constant scaling, of the introduction of new substrate geometries (i.e. thin silicon on insulator) and of the modifications to the substrate material (i.e. SiGe). We then discuss the advantages of NiSi and for each of the CoSi₂ limitations, we point out why Ni is believed to be superior from the point of view of material properties, miscibility of phases and formation mechanisms. Discussion follows on the expected limitations of NiSi and some of the possible solutions to palliate these limitations.