Control of sonoluminescence signal in deionized water using carbon dioxide

Megasonic cleaning is routinely employed in semiconductor industry for cleaning of wafers. However, the method also results in damage to wafer features and such damage has been proposed to arise from transient, imploding cavities formed during megasonic processing. Transient cavitation is associated with the release of light, a phenomenon called sonoluminescence (SL) and the extent of damage has been shown to correlate with the intensity of SL. Control of sonoluminescence may therefore allow control of damage during megasonic processing of wafers. In this study, the ability of carbon dioxide to quench sonoluminescence generation in deionized water exposed to megasonic field of varying power density and duty cycle has been systematically investigated. It has been found that CO₂ is not only incapable but also a potent inhibitor of sonoluminescence, providing a potential means for selective alleviation of the violent effects of transient cavitation in process fluids. A novel chemical method has been established for in situ release of CO₂ from NH₄HCO₃ through a pH induced shift in the carbonic acid equilibria in deionized water. Using this method, a precisely controlled, progressive decrease in SL of air saturated deionized water through addition of NH₄HCO₃ has been demonstrated. It has been determined that 130 ppm of released CO₂ is sufficient for complete inhibition of sonoluminescence generated in air saturated deionized water.     

Cleaning method of InSb [111] B of n-InSb [111] A/B for the growth of epitaxial layers by liquid phase epitaxy

The crystal structure of InSb[111]A/B surfaces shows that this structure is polarized.This means that the surfaces of InSb[111]A and InSb[111]B contain two different crystallized directions and they have different physical and chemical properties.Experiments were carried out on the InSb[111]A/B surfaces,showing that tartaric acid etchant could create a very smooth surface on the InSb[111]B without any traces of oxides and etch pit but simultaneously create etch pit on InSb[111]A surfaces.After lapping and polishing,some particles remained on the InSb[111]B surface,they could not be removed easily by standard cleaning process and if these particles remain on the surface of the substrate,the growth layer was not uniform and some island-like regions were observed.The purpose of this work is to remove these particles on the InSb[111]B surface.Some morphology images of both surfaces,InSb[111]A/B,will be presented.     

清洗液温度及浓度对硅研磨片清洗效果的影响

超声波清洗在硅片生产中具有广泛的应用,影响超声波清洗效果的因素有很多,如清洗液温度、清洗液浓度等。为了研究清洗温度和清洗液浓度对硅研磨片清洗效果的影响,在实验中通过改变清洗液温度及清洗液的浓度,最后观察硅片表面洁净情况。得出清洗液温度和清洗液浓度不是越高越好,在某一具体工艺下,都存在一个适宜范围,在适宜范围内,硅片的清...     

一种新型超净高纯试剂在半导体技术中的应用

通过对新型超净高纯试剂同常规CMOS酸碱试剂同时进行CMOS工艺中栅氧化前的清洗实验,从清洗后硅片残留金属量的电感耦合高频等离子体原子发射光谱分析、硅片表面形貌的AFM分析和MOS电容测量三个方面进行了应用实验.结果表明,以超净高纯乙腈为主要组分的新型试剂,其清洗效果总体优于常规CMOS酸碱试剂,可以考虑在半导体器件相应清洗工艺中采用.     

表面处理对FED薄膜型金属电极性能的影响

针对场致发射显示器（FED）金属薄膜与玻璃附着力的特性,提出一种超声清洗和UV清洗相结合技术应用于薄膜型金属电极表面清洁处理。本文分析了超声清洗和UV清洗的基本原理．利用绿灯观测装置和大面积视频显微镜检测不同超声清洗时间和频率以及UV清洗对金属电极质量的影响,利用场发射测试系统测试经表面处理前后的金属薄膜电极性能。实验结果表明,FED金属薄膜电极在32kHz超声清洗10min,Uv光清洗5min后,电极表面干净,无尘埃和有机污物,金属膜层不脱落。显示器场发射性能稳定。     

硅研磨片超声波清洗技术的研究

介绍了硅研磨片清洗的重要性,分析了影响硅研磨片质量的主要因素,即金属杂质和各种污染物.重点分析了硅研磨片表面沾污的原因,并且通过大量的实验分析得到了活性剂和碱性清洗液、去离子水的最佳体积比是0.20:1.00:10.0,清洗的最佳时间为3 min～5 min和最佳温度范围为40℃～50℃.     

半导体晶圆的污染杂质及清洗技术

介绍了半导体圆片存在的各种污染杂质的类型和去除方法,并概要总结了半导体圆片的清洗技术,对半导体圆片的湿法和干法清洗特点和去除效果进行了比较分析。     

激光等离子体冲击波清洗中的颗粒弹出移除

针对激光等离子体冲击波清洗颗粒技术中的滚动移除机制缺陷,提出一种基于颗粒弹性形变的弹出移除模型。从冲击波与颗粒相互作用出发,考虑冲击波波后气体分子与颗粒的碰撞,结合颗粒弹性储能机制,得到弹出所需要的最小弹性形变高度。根据颗粒弹出所需最低速度和冲击波基本关系式得到满足颗粒弹出要求的冲击波马赫数,结合冲击波波后压强分布特点给出了颗粒弹出所需的外部条件。清洗实验证实了颗粒弹出移除机制的正确性。     

CMP后清洗技术发展历程

从80年代开始,结合当时最具代表性的CMP设备,分析当时的后清洗技术,如：多槽浸泡式化学湿法清洗、在线清洗、200mm集成清洗、300mm集成清洗及20nm以下的CMP后清洗趋势,每种后清洗技术都结合CMP设备明确分析其技术特色,优点和缺陷。全面阐述CMP工业界的后清洗发展历程。     

可替代传统空气洁净技术的医用组合空气消毒净化新技术在手术部的应用

对佛山蝉城区中心医院新大楼手术部采用的多样性高度节能组合消毒净化空调系统的设计,检测和运行给予介绍,并与传统的三级过滤洁净空调系统进行综合性能比较。