THE STATISTICAL DISTRIBUTION OF EXTREME VALUES OF WAVE-CURRENT FORCES ACTING ON SLENDER CIRCULAR CYLINDER IN IRREGULAR WAVES

Based on model test,the statistical distribution of extreme values of wave-current in-line forces acting on vertical circular cylinder is analyzed in this paper.It is shownthat the results calculated by the simplified method,proposed by authors,agree well with the testdata;Weibull distribution is also adoptable in the region of high KC number, and the shapeparameter a and scale parameter β are related well with KC number respectively.     

点阴极电场辅助阳极连接中的紧密接触面积和电流

用等效电路的方法研究了点阴极情况下的电场辅助阳极连接效应，计算了连接电流，连接孕育期和紧密接触面积，本文结果表明，连接初期电流迅速衰减，随后缓慢变小，直至某一稳定值，孕育期随温度上升指数下降，连接温度高时，孕育期将难以观察到；待连接表面之间紧密接触面积随时间延长而非线性扩展，紧密接触区域增大时，其边界向外推进速度渐小，而接触面积增加渐快。     

新型交流脉冲MIG焊接法的研究

采用自行研制的具有方框形外特性的交流脉冲MIG焊接电源 ,又设计了双凹形焊接电流波形 ,即过零前后的电流波形均为脉冲大电流 ,有利于交流脉冲MIG焊接电弧的连续稳定。按照这个新型交流脉冲MIG焊接方法 ,不必加任何稳弧措施 ,可实现电弧的稳定燃烧 ,解决了电弧磁偏吹的问题 ,具有较好的焊接工艺性能 ,用于压力容器的全位置焊接和铝焊接均有很好的焊缝成型     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.     

界面流法计算反应堆六角形燃料组件中子通量密度分布

利用界面流法计算两维六角形轻水堆燃料组件中子通量密度分布。子区内中子源在空间上采用二次分布近似，还考虑了六角形组件周边水隙对组件内中子通量密度的影响。根据提出的模型，编制了TPHEX－E程序，并对一些轻水堆六角形组件问题作了计算，计算结果与蒙特卡罗方法计算结果进行了比较，符合良好。本程序可用于六角形轻水堆燃料组件计算。     

基于BOOSt结构下不连续导电模式的PFC电路

采用现代高频功率变换技术的有源功率因数校正（Power Factor Corrector,PFC)技术是解决高频开关变换器谐波污染的有效手段。与传统的PFC电路相比，有源PFC电路的输入电流接近正弦波且与输与电压同相位，能有效抑制电流波形畸变和谐波，因此避免了对同一电网设施的干扰。在PFC电路中，Boost变换器是研究和应用得最多的一种变换器。本文着重分析了Boost电路在不连续导电模式状态下，PFC电路的临界条件，对实际电路结构的设计有很好的指导意义。     

微型计算机的接触电流和接地线电流的测量

介绍了微型计算机的两种不同类型的泄漏电流的危害及其测量方法。     

Effects of hot-carrier stress on high performance polycrystalline silicon thin film transistor with a single perpendicular grain boundary

This paper is a report on the effect of a single perpendicular grain boundary on the hot-carrier and high current stability in high performance polycrystalline silicon (poly-Si) thin film transistors (TFTs). Under a hot carrier stress condition (Vg = Vth + 1 V, Vd = 12 V), the poly-Si TFT with a single grain boundary is superior to the poly-Si without any grain boundary because of the smaller free carriers available for electric conduction. The shift of transconductance in poly-Si TFT with a single grain boundary is less than 5% after hot carrier stress during a period of 1000 s. The shift of transconductance is about 25% in the case of the poly-Si TFTs without a grain boundary in the channel. On high current stress, the poly-Si TFT without the grain boundary is less degraded than the poly-Si TFT with the grain boundary because the concentrated electric field near the drain junction is lower.     

Modeling and Analysis of a Long Thin Conducting Stripline

A long thin conducting stripline embedded in a dielectric and centered between two large conducting plates, i.e., the stripline environment, is considered. The stripline is modeled as infinitely long, infinitely thin, and perfectly conducting by first considering a stripline of finite length, thickness, and conductivity in a dielectric layer. Starting from Maxwell's equations and assuming that the current on the stripline is a propagating wave in length direction, asymptotic expressions for the fields inside and in the neighbourhood of the stripline are deduced. These expressions are used to model the stripline in the stripline environment, which leads to a boundary-value problem for the electric potential. This problem is solved by two different approaches, leading to integral equations for the current and for an auxiliary function describing the electric potential. A relation between the current and the auxiliary function is deduced, which is used to obtain asymptotic expressions for current and impedance. Results are compared with a numerical solution of the integral equation for the current and with results in literature.     

Operation of superconducting fault current limiter using vacuum interrupter driven by electromagnetic repulsion force for commutating switch

Using conventional high‐temperature superconducting wire, a model superconducting fault current limiter (SFCL) is made and tested. Solenoid coil using Bi2223 silver sheath wire is so made that inductance is as small as possible and a vacuum interrupter is connected in series to it. A conventional reactor coil is connected in parallel. When the fault current flows in this equipment, superconducting wire is quenched and current is transferred into the parallel coil because of voltage drop of superconducting wire. This large current in parallel coil actuates magnetic repulsion mechanism of vacuum interrupter. Due to opening of vacuum interrupter, the current in superconducting wire is broken. By using this equipment, current flow time in superconducting wire can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of parallel coil. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(1): 52–61, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20315