一类非线性系统的变边界层滑模变结构控制

针对一类不确定非线性系统,在系统的非线性动态函数满足可估计和有界两个基本假设的条件下,给出了此类系统基于非线性动态函数估计的一般滑模控制设计.然后论证了此类系统的变边界层滑动模态的存在性与可达性.所设计的变边界层滑模控制律除了具有一般滑模控制率的优点外,还能够有效消除滑模控制的高频抖振.数值仿真结果证明了所设计控制率的有效性.     

GSM网络隐性故障排查探讨

对于GSM网络中的设备故障,有些会触发相关故障告警,可称为显性故障。另外,有部分设备故障会影响网络正常运行,但却不会直接触发告警,这类故障称之为隐性故障,主要包括TRX、CDU、天线、背板、总线和各种连线设备,在软件、内部处理模块和连接方面等出现的问题。针对GSM网络隐性故障,首先要判断区分故障的类型,再根据实际工作经验将坏件替换或通知维护人员进行调测解决隐性故障。     

Cross‐Layer Resource Allocation Scheme for WLANs with Multipacket Reception

Tailored for wireless local area networks, the present paper proposes a cross‐layer resource allocation scheme for multiple‐input multiple‐output orthogonal frequency‐division multiplexing systems. Our cross‐layer resource allocation scheme consists of three stages. Firstly, the condition of sharing the subchannel by more than one user is studied. Secondly, the subchannel allocation policy which depends on the data packets’ lengths and the admissible combination of users per subchannel is proposed. Finally, the bits and corresponding power are allocated to users based on a greedy algorithm and the data packets’ lengths. The analysis and simulation results demonstrate that our proposed scheme not only achieves significant improvement in system throughput and average packet delay compared with conventional schemes but also has low computational complexity.     

智能复合材料光纤传感层的研究

光纤自诊断系统是智能复合材料结构的重要组成部分。但是 ,将光纤传感器阵列埋入复合材料是实现智能复合材料的一个难题。解决这一问题的方法是将光纤传感器集成在一起形成一个模块化的便于埋入复合材料中的光纤传感层。本文探讨两种使用聚酰亚胺制作传感层的方法。一种是把光纤传感器阵列埋入聚酰亚胺薄膜中 ;另一种是用作为光学材料的含氟聚酰亚胺制作矩形 (道沟 )光波导和光传感器。后一种方法制作的传感器模块集成度高、可靠性好 ,是值得注意的发展方向。     

Solid-state intermetallic compound layer growth between copper and 95.5Sn-3.9Ag-0.6Cu solder

Long-term, solid-state intermetallic compound (IMC) layer growth was examined in 95.5Sn-3.9Ag-0.6Cu (wt.%)/copper (Cu) couples. Aging temperatures and times ranged from 70°C to 205°C and from 1 day to 400 days, respectively. The IMC layer thicknesses and compositions were compared to those investigated in 96.5Sn-3.5Ag/Cu, 95.5Sn-0.5Ag-4.0Cu/Cu, and 100Sn/Cu couples. The nominal Cu₃Sn and Cu₆Sn₅ stoichiometries were observed. The Cu₃Sn layer accounted for 0.4–0.6 of the total IMC layer thickness. The 95.5Sn-3.9Ag-0.6Cu/Cu couples exhibited porosity development at the Cu₃Sn/Cu interface and in the Cu₃Sn layer as well as localized “plumes” of accelerated Cu₃Sn growth into the Cu substrate when aged at 205°C and t>150 days. An excess of 3–5at.%Cu in the near-interface solder field likely contributed to IMC layer growth. The growth kinetics of the IMC layer in 95.5Sn-3.9Ag-0.6Cu/Cu couples were described by the equation x=x_o+Atⁿexp [−ΔH/RT]. The time exponents, n, were 0.56±0.06, 0.54±0.07, and 0.58±0.07 for the Cu₃Sn layer, the Cu₆Sn₅, and the total layer, respectively, indicating a diffusion-based mechanism. The apparent-activation energies (ΔH) were Cu₃Sn layer: 50±6 kJ/mol; Cu₆Sn₅ layer: 44±4 kJ/mol; and total layer: 50±4 kJ/mol, which suggested a fast-diffusion path along grain boundaries. The kinetics of Cu₃Sn growth were sensitive to the Pb-free solder composition while those of Cu₆Sn₅ layer growth were not so.     

架设在5层楼楼顶的双锥中波小天线

简要介绍了双锥中波小天线的结构和工作原理。将双锥中波小天线架设到5层楼楼顶,能满功率播出且辐射效果与自立塔相当,保证了中波节目的安全播出。简单介绍了为此所做的屏蔽及接地工程。     

基于.net的频带传输系统设计与实现

针对频带传输存在概念抽象、知识点深等教学问题,设计了一款基于Visual Studio.net的频带传输系统,该系统采用结构化与面向对象相结合的方法进行开发,内容包含ASK、FSK、PSK的调制与解调技术.本文介绍了该系统的功能模块分析与设计,并对各种关键技术予以重点介绍.经测试,系统界面友好、交互性强,能够有效的降低课程学习的难度.     

Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al₂O₃) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al₂O₃[11-20]. The properties of the ~500 nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880 °C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500 nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880 °C. It shows an optimized result at the growth temperature of 850 °C, and the ~500 nm-thick nonpolar GaN epitaxial films grown at 850 °C show very smooth surface with a root-mean-square surface roughness of 5.5 nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7 nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices.     

垂直电镀HDI生产探讨

常规PCB向更高密度的HDI/BUM板的发展是大势所趋,传统电镀难以胜任盲孔电镀;通过对其设备改良和性能测试,传统电镀成功解决生产的实例,对运用垂直电镀生产线生产HDI板从原理、过程、影响的因素几个方面进行了详细的分析。最后对如何在生产过程中进行管理给出了建议。