巨型浮吊船电力系统动态响应的联想记忆识别

巨型浮吊海洋工程船的作业依赖于船舶电力系统的稳定运行。这类船上大功率变频器、大功率交流电机等设备的大量应用,使得控制系统受干扰影响严重,检测到的动态响应常常含有干扰成分,给电力自动化设备的反馈控制带来了困难。联想记忆具有按信息内容检索的功能,可以模仿人脑进行联想,处理缺损和不确定的信息,具有容错功能。根据联想记忆原理,运用Hopfield网络结构,对Hebb学习规则进行了改进,构建了自联想离散Hopfield网络。该网络通过对动态响应标准样本进行学习,得到了稳定模式,在受干扰污染、信息缺损的巨型浮吊船电力系统动态响应的识别中表现出了良好的滤除干扰的能力。     

旋浮熔炼+旋浮吹炼与富氧侧吹熔炼+多枪顶吹连续吹炼工艺比较

简要介绍了旋浮熔炼+旋浮吹炼与富氧侧吹熔炼+多枪顶吹连续吹炼工艺流程,通过对比分析这两种工艺的生产技术指标、造渣熔剂消耗、冶炼能耗和杂质元素适应性,阐明了它们各自的工艺特点,为我国后续新建或升级改造铜冶炼项目的工艺选择提供参考。     

浮动式液压剪的结构特点及参数计算

本文结合作者的浮动式液压剪的设计、调试体会,分析了液压剪的结构组成,并对液压剪设计所需的一些重要参数进行确定。     

Floating Catalyst Chemical Vapor Deposition Patterning Nitrogen-Doped Single-Walled Carbon Nanotubes for Shape Tailorable and Flexible Micro-Supercapacitors

Micro-supercapacitors (MSCs) as high-power density energy storage units are designed to meet the booming development of flexible electronics, requiring simple and fast fabrication technology. Herein, a fast and direct solvent-free patterning method is reported to fabricate shape-tailorable and flexible MSCs by floating catalyst chemical vapor deposition (FCCVD). The nitrogen-doped single-walled carbon nanotubes (N-SWCNTs) are directly deposited on a patterned filter by FCCVD with designable patterns and facilely dry-transferred on versatile substrates. The obtained MSCs deliver an excellent areal capacitance of 3.6 mF cm⁻² and volumetric capacitance of 98.6 F cm⁻³ at a scan rate of 5 mV s⁻¹ along with excellent long-term cycle stability over 125 000 circles. Furthermore, the MSCs show good performance uniformity, which can be readily integrated via connection in parallel or series to deliver a stable high voltage (4 V with five serially connected devices) and large capacitance (5.1 mF with five parallel devices) at a scan rate of 100 mV s⁻¹, enabling powering the light emitting displays. Therefore, this method blazes the trail of directly preparing flexible, shape-customizable, and high-performance MSCs.     

一种新型有源调压变换器的实现

针对目前普通的电压调整模块的变换器存在输入、输出电压变化量大、变换效率低、占空大等问题,提出了一种带有源浮充平台新型电压调整模块,该模块具有稳定的调压率,同时模块能在不采取均流的情况下自动调节平衡各相感应电流提高其效率,精简了控制电路。对新模块进行了稳、动态试验验证,验证结果证明了新模块理论的正确性。     

油气井用隔板起爆器的起爆能力

为了提高油气井用隔板起爆器的起爆能力,在传统隔板起爆器的基础上,改变了其受主装药盲孔的几何结构和受主装药结构,设计出一种油气井用隔板起爆器,并对其进行了起爆能力的实验研究.实验结果显示,油气井用隔板起爆器起爆油气井耐温传爆管的最大空气隙距离为85 mm,而传统隔板起爆器和油气井耐温传爆管分别为20 mm和65 mm,因...     

采用浮空场限制环的耐压10kV碳化硅二极管的开发

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 μm in thickness with a doping of 6 × 10^14 cm^-3. The on-state voltage was 2.7 V at JF = 13 A/cm^2.     

绝缘体上硅动态阈值nMOSFETs特性研究

基于绝缘体上硅技术,提出并研制动态阈值nMOSFETs结构.阐述了动态阈值nMOSFETs的工作原理.动态阈值nMOSFETs的阈值电压从VBS=0 V时的580 mV动态变化到VBS=0.6 V时的220 mV,但是这种优势并没有以增加漏电流为代价.因此动态阈值nMOSFETs的驱动能力较之浮体nMOSFETs在低压情况下,更具有优势.工作电压为0.6 V时,动态阈值nMOSFETs的驱动能力是浮体的25.5倍,0.7 V时为12倍.而且浮体nMOSFETs中的浮体效应,诸如Kink效应,反常亚阈值斜率和击穿电压降低等,均被动态阈值nMOSFETs结构有效抑制.     

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm²、特征栅漏电容为4.72 pF·mm^-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。     

Ultrafast Responsive Non‐Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns^?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.