基于极限分析上限法的加筋土坡临界高度

在塑性极限分析理论的基础上,假定破裂面为对数螺旋面,导出了加筋土坡临界高度的解.不计加筋力,该解与无筋土坡临界高度一致;和加筋土坡试验结果比较,虽计算的临界高度略偏低,但在工程中应用是可靠的,可用于加筋土坡设计时的参考.     

男西装袖窿结构参数的研究

对男西装袖窿结构中的重要结构参数——衣片的袖窿宽及衣袖的袖山高进行分析与研究，提出了合理有效的设计方法，即用比例法确定衣片的袖窿宽及用制图法确定衣袖的袖山高．该方法将对男西装的结构设计与工艺制作提供有益的参考．     

深水海上风机吸力桶导管架基础承载特性

针对海洋深水环境,设计适应70 m水深的四桶导管架结构形式,并在此基础上设计相同高度和主腿斜度的三桶导管架基础。采用Abaqus有限元软件建立导管架结构-吸力桶-土体整体有限元模型,通过对比分析探究海上风电深水吸力桶导管架基础的承载力特性。研究发现：吸力桶与土体的位移一致性程度可反映基础水平极限承载力大小,四桶导管架基础的综合承载特性优于三桶导管架基础;加载高度对四桶导管架基础的水平承载力特性有重要影响,基础水平承载力随着加载高度增加逐渐减小;加载方向对四桶导管架基础水平承载力影响较小。     

基于表面反射率的赤潮卫星荧光线高度算法比较

采用现场实测和室内培养两种方式测定了甲藻、赤潮异弯藻和叉角藻等赤潮藻以及新月菱形藻、海洋蓝绿藻、叉鞭金藻、塔胞藻、扁藻和小球藻等非赤潮藻类光谱曲线。采用的各卫星(MERIS,GLI,MODIS)的荧光波段数据按照其中心波长,从实际测定的高光谱反射率曲线提取而来,并按照荧光高度的计算公式得到其荧光高度。同时,采用统计分析方法建立荧光高度与叶绿素浓度的关系。10种藻类水体的荧光线高度与叶绿素α的回归分析结果显示了良好的线性关系,但部分藻种出现了负相关的结果。因为在高叶绿素浓度即赤潮条件下,浮游植物在荧光波段(685nm附近)和近红外波段(700～750nm)复杂的光谱行为,使得采用星载遥感器的叶绿素荧光波段探测某些藻类的赤潮时会出现偏差。同时,由于不同藻类的荧光高度与叶绿素浓度的关系也不一致,本文建议针对单独的赤潮种类应建立特定的荧光算法。相关问题还需要在实测的基础上进行更深入的研究。     

铝合金电磁铸造工艺参数的研究

通过近似计算和试验确定了工程规模的铝合金电磁铸造（ＥＭＣ）基本工艺参数如感应器电流、电压、频率、功能消耗等一液柱高度及稳定性的关系，设计制造了ＥＭＣ装置，成功地铸造了截面直径为０．１８ｍ，０．１１×０．０５ｍ，０．５２×０．１３ｍ的铝及铝合金锭和扁锭。     

下石节矿综放工作面上覆岩层位移冒落带高度确定的研究

冒落带的最大高度一般是由工作面煤层顶板特有的岩性组合及岩石物理力学性质决定的,冒落带高度的确定是了解“三带”分布范围的关键,是合理设计顶板高抽岩巷的布置层位和高抽钻孔的终孔层位的前提。为了使下石节矿高瓦斯易自燃特厚煤层综放工作面采空区瓦斯抽放技术取得更好的效果,文中介绍了一种比较新颖的测量方法即钻孔返水计量法的设计及实施,并通过现场实测一些数据进行数值模拟来准确确定下石节矿上覆岩层位移冒落带的高度。     

我国测绘基准的历史与现状

对我国测绘基准的内容、定义及实现进行了简要的论述,同时也对这些基准所存在的问题进行了概括。     

低重心大支承面浆砌片石构筑物拆除爆破技术

在城市拆除爆破中，用小孔爆破法拆除重心很低、支承面大的浆砌片石构筑物难度很大。本文通过用“集团装药”法拆除此类构筑物的工程实例，介绍这种方法的布药方式、药量计算及其适用条件。     

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.     

Effects of a a-Si:H layer on reducing the dark current of 1310 nm metal-germanium-metal photodetectors

Two approaches of hydrogenated-amorphous-silicon (a-Si:H), as Schottky-barrier height (SBH) enhancement and passivation layers, were investigated to suppress dark current of 1310 nm metal-germanium-metal photodetectors (MGM-PDs). Observations show that when a-Si:H is inserted between metal and Ge, the dark current is effectively reduced due to SBH enhancement, but similarly lowers photocurrent resulting from the blocking of a-Si:H. In contrast with a-Si:H acting as a passivation layer a very high photo-to-dark current ratio of 6530 is achieved with a high responsivity of 0.72 A/W, attributing to the defect centers on the Ge surface which are passivated. Such a result suggests that the a-Si:H passivation layer is a good candidate in fabricating high-quality 1310 nm MGM-PDs.