Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating

An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature.     

基于电报编码的"电子喉"系统

本文介绍一种能够解决有语言障碍的人汉语发音问题的计算机软件系统，此系统采用电报和五笔画编码方案作为汉字输入方法，自建了一套汉字录入和检索体系，并利用Microsoft公司的Speech SDK4.0和Concatenated Text-to-Speech Engine建立了专用的语音库，本系统使得有语言障碍的人可以与其他正常人之间进行正常的交流，从而避免了使用哑语带来的不便。     

Schottky barrier heights of contact metals to p-type ZnSe

Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C⁻²-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 10²⁰ cm⁻³ are essential to obtain an ohmic contact with contact resistivity of around 10⁻³ Ω·cm².     

Spectral Feature Analysis of Semiconductor Thin Disk Laser

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay...     

钛合金的银脆,镉脆敏感性及其控制

利用慢应变速率拉伸技术（ＳＳＲＴ），并结合恒载实验，较全面地研究了Ｔｉ－６Ａｌ－４Ｖ合金的银脆行为、固态与液态镉脆行为，确定了应变速率、接触条件、热处理制度、试样取向、温度等因素对Ｔｉ－６Ａｌ－４Ｖ合金银脆与镉脆敏感性的影响，探讨了Ｎｉ阻挡层对控制Ｔｉ－６Ａｌ－４Ｖ合金和ＴＣ１１合金银脆开裂的作用。     

CO_2激光对兔脑组织血脑屏障的影响

同等功率和照射时间条件下,在14只家兔大脑皮质运用伊文思蓝染料和超微结构观察方法进行血脑屏障改变的研究。结果表明:CO_2激光作用十分表浅,且激光作用后的水肿层血脑屏障改变是可逆的。     

双极型静电感应晶体管开关时间的测量与分析

从理论和实验两方面对静电感应晶体管（ＢＳＩＴ）的开关时间进行了分析和测量，提出了简单的分析方法，将影响ＢＳＩＴ开关时间的各个因素归结为结构因子和材料因子，从而简化了分析影响ＢＳＩＴ开关时间的因素，对于ＢＳＩＴ的实际工艺，结构设计有指导意义。     

动情期家兔输卵管上皮及其分泌活动的电镜观察

本实验用透射电镜和扫描电镜观察了动情期家兔输卵管上皮。证实分泌细胞和纤毛细胞都有分泌功能，共分泌三种分泌物质。本文对这些分泌物质的分泌方式、分泌活动进行了研究和探讨。另外，发现上皮基膜下方始终有一层成纤维细胞形成的胞质膜伴行，据此，对血一输卵管腔屏障的构成亦进行了讨论。     

隧穿问题的数值算法

本文给出一种新的数值方法，用以计算隧道效应中的透射系数和相移。这个方法适用于任意形状的势垒，不仅可以计算透射系数，还可以计算透射波和反射波的相位。分析表明该方法具有很高的精度。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.