理想九点五态控制器原理的叙述

用计算的方式叙述理想九点五态控制器的控制原理。为便于人们理解二阶对象的运动中控制的变化过程,将抽象的对象转换为人们熟知的L-R-C电路,通过调节输入电压(即控制作用)的大小和方向来实现对对象性能的调节,并使系统达到理想的性能指标。最后用仿真来验证计算结果的正确性。     

橡胶促进剂DM的合成工艺

M氧化生成DM是自由基反应机理，结合微反应器机理，采用分子氧化的反应方式，选用绿色溶剂异丙醇、环境友好型氧化剂H202，一步法制取高品质DM。对反应时间、反应温度、氧化剂用量等因素进行考察，确定最佳工艺条件为：反应时间90min，反应温度55℃，氧化剂不过量，碱过量5％，M—Na溶液M含量30％，加料时N60 min，溶剂用量为M—Na溶液质量的1．5倍，所得产品质量合格，熔点可达180℃。     

一种通用型的目标数据仿真

给出了一种通用型的雷达目标模拟器 ,它能够方便直观的产生各种特征的三维目标轨迹 ,可实时离散出目标点迹 ,为雷达数据处理及精度分析提供数据来源。目标轨迹由一组特征点定义 ,修改方便 ,应用灵活     

邻—(4—乙基苯甲酰基)苯甲酸的研究

本文阐述了通过Friedel-Crafts反应合成邻-(4-乙基苯甲酰基)苯甲酸的方法.研究了影响产物质量的因素,提出了适宜的工艺条件.     

Gamma ray irradiation induced point defects in BaF2

There are some original nonmagnetic point defects in the BaF2 crystallite powder,such as interstitial and vacant F^- which can become paramagnetic centers by γ-ray-irradiation at room temperature,Afterγ-ray irradiation the paramagnetic point defects Vk,H,F and M centers,have been observed in the sample with experiment of electron spin resonance(ESR).Frenkel exciton,a nonmagnetic point defect,can also be induced by the γ-ray irradiation in the sample at room temperature,the existence of the Frenkel exciton is affirmed by an anomalous change of the ESR signal of Vk center with temperature,The signals of the ESR of the H,F and M centers weaken and vanish with the temperature increasing monotonously,But the ESR signal of the Vk enhances when the temperature goes up about 127℃,then weakens and vanishes.An increase in the Vk center follows an annihilation of the Frenkel exciton with heating.     

BEM 系列原油流动性改进剂的应用

对BEM系列原油流动性改进剂的基本原理以及在中洛、濮临、东临、东黄、鲁宁、魏荆等几条原油长输管道工业应用的现场测试情况进行了介绍。结果表明，BEM系列原油流动性改进剂在降低原油凝点和粘度方面性能良好，能满足管道安全，平稳运行的要求。     

一种有效的优化的多载波通信系统的功率分配算法

本文提出一种关于DMT系统传输纯数据流业务的最佳的功率分配算法，该算法使用了一种有效的表格查手工艺工和拉格朗日乘法器对分搜索办法，能够较快的收敛到最佳的功率点。同时，易于用硬件和软件实现。     

三维施工中SN388炮点表的设置

本文提供了SN388在三维施工中炮点表的几种设置方法，并进行了相应的对比说明，最后给出了改进炮点表设置的有关设想。     

Thermodynamic modeling of native point defects and dopants of GaN semiconductors

A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers (free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were calculated to show the facility of the model.     

Display reflectance: Basics,measurement, and rating

Abstract— In this paper, methods and instruments for measurement and evaluation of reflection characteristics are reviewed as needed for research and development of electronic displays and for material and surface modeling with ray‐tracing and rendering software packages. Contrast under ambient illumination and recognizability under daylight illumination are prime development targets in the electronic‐display field, while computation and synthesis of realistic scenes and objects are pushing the need for physical data in computer graphics applications. Three categories of instruments are available for detailed reflection analysis. They are based on (1) gonioscopic (mechanical) and conoscopic (optical) directional scanning, (2) imaging approaches, and (3) on arrangements with variable source or receiver aperture. The capabilities, advantages, and limitations of these methods are introduced and discussed in order to facilitate appropriate selection of methods and instruments. For illustration purposes we present typical results obtained from commercial electronic display screens. A basis for continued widespread implementation and standardization of reflection metrology as required for objective rating and comparison of electronic‐display screen performance under ambient illumination is provided.