银铜复合电触点复合强度检测方法的讨论

贵金属及其合金铆钉型复合电触点除了应考核其冷态复合强度之外，还必须增加在热态下复合强度的考核，只有这样才能满足用户在产际运行时对复合触点复合强度的要求。     

移动探针测试技术的运用及测试结果剖析

主要讨论印刷电路板(PCB)移动探针测试中软件及检测中遇到特殊情况的处理,并对造成通短路现象的原因进行了分析,以达到保证PCB产品质量的目的。     

Early detection of ageing in solder joints through laser probe thermal analysis of the peltier effect

We have recently developed an optical contactless method for testing the quality of solder joints during accelerated thermal cycling ageing processes.¹ The method was based upon the measurement of the dynamic thermal behaviour of the joint to short bursts of Joule heating. It has proved to be efficient in revealing the formation of cracks at the lead-solder interface. We present a method to evaluate ageing at a much earlier stage in the cycling process. We have observed in earlier work,¹ that before cracks appear, structural changes occur in the solder at the lead-solder interface. The thermal response of the solder joint is recorded over time to a Peltier heat perturbation produced by flowing a current pulse through the interface where structural changes occur. The key point in this method is to discriminate the Peltier effect from the Joule thermal response because both effects generate heat. The variation of the early Peltier response in the thermal cycling ageing tests is seen as a quantitative signature of the structural changes in the lead-solder interface.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

Novel miniature integrated optical goniometers

A new principle and arrangement for directly determining the angle of incidence of an optical beam on an object are proposed and demonstrated. The novelty of the approach lies in the realization of a ‘smart object’, which extracts a portion of the incident beam's power into an optical waveguide attached to the object's surface or embedded in its body for converting the angle of incidence into the position of a guided beam with finite lateral extent. This ‘integrated optical light pointer’ beam is accomplished by means of creating additional degrees of freedom on the target in two different ways. While a first type is based on introducing spatial variations of the waveguide thickness, a second type makes use of a chirp of the grating periodicity. The feasibility for practical applications has been experimentally demonstrated by a direct comparison with a commercial high-resolution encoder, resulting in an r.m.s. error of <30′'. Measurements have been performed for chips fabricated based on replicated polycarbonate substrates and with no external optics, showing the great potential of this approach for realizing low-cost yet high-performance miniature goniometers.     

Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

Contemporary approaches to certification of measurement provision software

Contemporary approaches to the certification of measurement provision software are considered in domestic and overseas publications. Normative documentation is analyzed and a scheme is proposed for certification that takes account of the features of programs used for metrological purposes. __________ Translated from Izmeritel’naya Tekhnika, No. 5, pp. 65–68, May, 2007.     

振动采油工艺在稠油区的实验研究与应用

在天然地震的影响下,油井产量发生波动,使人们受到启示,从而引进了振动采油工艺技术。本文对振动增产的机理进行了探讨,指出振动增油机理在于加快地层中流体的流速;改变储集层内油、气、水的重新分布;改变岩石表面润湿性,有利于清除油层堵塞,提高渗透率。通过分析两个试验区的振动采油效果,总结出在不同扰动力、不同激振频率、不同振动周期下的增产效果和规律,对振动采油的实施具有一定的指导意义。     

Controversy and consensus regarding the use of cognitive ability testing in organizations.

Seven hundred three members of the Society for Industrial and Organizational Psychology indicated agreement or disagreement with 49 propositions regarding cognitive ability tests in organizations. There was consensus that cognitive ability tests are valid and fair, that they provide good but incomplete measures, that different abilities are necessary for different jobs, and that diversity is valuable. Items dealing with the unique status of cognitive ability were most likely to generate polarized opinions. A 2-factor model, classifying items as those reflecting societal concerns over the consequences of ability testing and those reflecting an emphasis on the unique status of "g," fit the data well, and these factors proved especially important for predicting responses to the more controversial items. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

In-situ doped polycrystalline Si_xGe_1-x (x = 0.7) alloys were deposited by rapid thermal chemical vapor deposition (RTCVD) using the reactive gases SiH₂Cl₂, GeH₄ and B₂H₆ in a H₂ carrier gas. The depositions were performed at a total pressure of 4.0 Torr and at temperatures 600° C, 650° C and 700° C and different B₂H₆ flow rates. The conditions were chosen to achieve high doping levels in the deposited films. Our results indicate negligible effect of B₂H₆ flow on the deposition rate. The depositions follow an Arrhenius type behavior with an activation energy of 25 kcal/mole. Boron incorporation in the films was found to follow a simple kinetic model with higher boron levels at lower deposition rates and higher B₂H₆ flow rates. As-deposited resistivities as low as 2 mΩ-cm were obtained. Rapid thermal annealing (RTA) in the temperature range 800-1000° C was found to reduce the resistivity only marginally due to the high levels of boron activation achieved during the deposition process. The results indicate that polycrystalline Si_xGe_1-x films can be deposited by RTCVD with resistivities comparable to those reported for in-situ doped polysilicon.