长距离管输对3号喷气燃料导电性能和清洁性能的影响

分析了长距离管输后3号喷气燃料电导率严重衰减的原因和补加抗静电剂后对3号喷气燃料电导率和水反应指标的影响。对比了成品油长距离管输和喷气燃料馏分长距离管输对3号喷气燃料电导率和水反应指标的影响，并对比了两种管输方式的优缺点，提出对3号喷气燃料的管输建议。3号喷气燃料的长距离管输，优先采用喷气燃料馏分油管输在末端加注抗静电剂的方式；需兼顾汽运时，宜采用成品油管输并在末端根据电导率衰减情况，最小量补加抗静电剂的方式，以获得较高的成功率和较好的经济效益。     

超音速燃气射流非定常波系的数值研究

根据ＭＵＳＣＬ格式的基本思想，对格式进行了部分修改，数值模拟了超音速燃气射流流场的结构和发展过程。给出了流场谐波系的变化趋势，得到了流场达到稳定状态的时间和稳定后的流动图形。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

LW-601喷水织机长丝织物松紧档疵点的成因及对策

松紧档疵点是喷水织机长丝织物织造过程中常见病疵之一。通过分析LW -60 1喷水织机的送经和卷取装置的工作原理 ,从机械调整与维护、生产过程管理及工艺优化等方面探讨了其产生的原因 ,并针对性提出了实用对策     

Effect of Pressure Gradient on Heat Transfer of Impinging Submerged Circular Jets

An experimental and numerical study have been carried out to investigate the distribution of radial local heat transfer coefficients of impinging submerged circular jets. Good agreement is achieved between the experimental results and the predicted value. Results show that the outer peak usually occurs at the radial location of r/d= 1.8~2.0, in which transition from laminar to turbulence happens resulting from disappeared pressure gradient abruptly, and that the inner peak appears rigidly at r/d=0.5, where the boundary layer has a minimum thickness because of elevating pressure gradient.     

Electrochemical mass transfer between an impinging jet and a rotating disk in a confined system

This paper presents the mass transfer results from an impinging liquid jet to a rotating disk. The mass transfer coefficients were measured using the electrochemical limiting diffusion current technique (ELDCT). Rotational Reynolds number (Re_r) in the range of 3.4 × 10⁴–1.2 × 10⁵, jet Reynolds number (Re_j) 1.7 × 10⁴–5.3 × 10⁴ and non-dimensional jet-to-disk spacing (H/d) 2–8 were taken into consideration as parameters. It was found that the jet impingement resulted in a substantial enhancement in the mass transfer compared to the case of the rotating disk without jet.     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。     

Time Characterization of High Density Gas Jet from a Pulsed Supersonic Nozzle via Laser Produced Plasma

A high-density gas jet supersonic nozzle is reported in this paper. The jitter and actuation time of the nozzle is determined by the pin discharge and laser spark radiation respectively. The jitter time of the nozzle is within 10μs with the backing pressure as high as 25 bar. With a nanosecond laser pulse focused on the gas jet about 1 mm below the nozzle, the actuation time is calculated to be about 15 ms by detecting the laser produced spark radiation, which reveals the existence of the gas jet and the relative gas density evolving with time. Consequently the gas density is estimated to be well above 10^19 cm^-3, compared with theoretical simulations from the nozzle parameters.