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51.
分析了千兆以太网体系结构,给出了符合IEEE 802.3z标准中1000BASE-X规范的发送器电路结构,并采用TSMC 0.25 μm CMOS 混合信号工艺设计了符合该规范的高速复接电路和锁相环时钟倍频电路.芯片核心电路面积分别为(0.3×0.26)mm2和(0.22×0.12)mm2.工作电压2.5 V时,芯片核心电路功耗分别为120 mW和100 mW.时钟倍频电路的10倍频输出时钟信号频率为1.25 GHz,其偏离中心频率1MHz处的单边带相位噪声仅为-109.7 dBc/Hz.在驱动50 Ω输出负载的条件下,1.25 Gbit/s的高速输出数据信号摆幅可达到410 mV. 相似文献
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D. Wang J. S. Jiang W. H. Zhang 《International journal for numerical methods in engineering》2004,61(10):1584-1602
In this paper, the position optimization of simple supports is implemented to maximize the fundamental frequency of a beam or plate structure. Both elastic and rigid supports are taken into account. First, the frequency sensitivity with respect to the movement of a simple support is derived using the discrete method. By means of the shape functions of the finite element method, closed‐form sensitivity formulations are developed straightforwardly. Then, a heuristic approach, called evolutionary shift method, is presented for optimizing support positions with a fixed grid mesh scheme. Based on the design sensitivity analysis, the support with the highest efficiency is shifted in priority along the elementary edges with the interval (step) of the elementary size. To facilitate the convergence of the process, the interpolation technique is employed to evaluate the solution more accurately. Finally, three numerical examples are presented to demonstrate the validity of the sensitivity analysis and the effectiveness of the optimization method. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
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A. Alt Dr.‐Ing. H. Mertens U. Arz L. Blessing C. Berger 《Materialwissenschaft und Werkstofftechnik》2007,38(5):402-409
High cycle fatigue of bolted connections Extensive tests regarding the influences on the fatigue of bolt‐nut‐connections of preloading with torsion, of preloading with yielding, of loading with superimposed bending and of the tested lot are processed. These influences are not yet known according to VDI 2230. New testing devices were designed for these tests, which allow a far less expensive operation and may easily be used for bolts of diameters up to M100 and testing frequencies up to 1000 Hz. The validity of fatigue resistance according to VDI 2230 is specified with respect to the test results. The determined influence of the tested lots is unexpectedly high. The manufacturing process of bolts should be improved to minimize this influence. 相似文献
57.
The current study replicated, in a sample of 2,300 outpatients seeking psychiatric treatment, a previous study (R. F. Krueger & M. S. Finger, 2001) that implemented an item response theory approach for modeling the comorbidity of common mood and anxiety disorders as indicators along the continuum of a shared latent factor (internalizing). The 5 disorders examined were major depressive disorder, social phobia, panic disorder/agoraphobia, specific phobia, and generalized anxiety disorder. The findings were consistent with the prior research. First, a confirmatory factor analysis yielded sufficient evidence for a nonspecific factor underlying the 5 diagnostic indicators. Second, a 2-parameter logistic item response model showed that the diagnoses were represented in the upper half of the internalizing continuum, and each was a strongly discriminating indicator of the factor. Third, the internalizing factor was significantly associated with 3 indexes of social burden: poorer social functioning, time missed from work, and lifetime hospitalizations. Rather than the categorical system of presumably discrete disorders presented in DSM-IV, these 5 mood and anxiety disorders may be alternatively viewed as higher end indicators of a common factor associated with social cost. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
58.
ISIS全局优化多道反演技术在墩2块岩性油藏描述中的应用 总被引:2,自引:0,他引:2
为进一步落实墩2块戴一段岩性油藏成藏规模及分布规律,针对该储层薄、横向变化快的特点,利用ISIS全局优化多道反演技术,对该构造区岩性储层进行了精细描述,较好的预测出戴一段储层平面分布规律。 相似文献
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Chihiro J. Uchibori Y. Ohtani T. Oku Naoki Ono Masanori Murakami 《Journal of Electronic Materials》1997,26(4):410-414
Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing
at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C.
The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and
an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance. 相似文献