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111.
The pyrolysis of tertiarybutylphosphine (TBP) has been studied in the low pressure conditions used for chemical beam epitaxy
(CBE). The pyrolysis studies were carried out in low pressure reactors of two different configurations, one of which is a
cracker cell designed for use in a CBE system. The reaction products were studied using a quadrupole mass spectrometer. The
products observed are accounted for by a reaction mechanism involving homolysis of the parent TBP molecule to produce PH2 and C4H9 radicals. These undergo subsequent reactions to form the stable products C4H8, PH3 and H2, with smaller amounts of P and P2 being produced. The production of the sub-hydride PH2 using this cracker cell design indicates that the use of partially cracked TBP may be a promising technique for reducing
the amount of carbon incorporated into the growing epitaxial layer. 相似文献
112.
步进式加热炉炉温优化设定模型及软件开发 总被引:1,自引:0,他引:1
针对线材厂步进式加热炉实际工况,提出了基于经验规则的炉温优化设定模型和在线自学习获取知识的思想,并以炉温优化设定模型为核心,开发出加热炉计算机控制系统的优化运行软件。 相似文献
113.
讲述了参观Semicon/west94′展览会及考察美国和西德的5个公司、1所大学所了解到的投影光刻技术、电子束曝光技术、透镜面形测试技术的发展。 相似文献
114.
在实测和分析32、14.6、12.5和9.5mm波段大气衰减的基础上,研究了大气衰减随仰角变化的规律;讨论了仰角为3~90°时计算大气衰减的简化计算公式;给出了大气等效高度与地面水汽密度的关系式,对大气衰减和等效高度的实测值与理论值进行了比较和分析. 相似文献
115.
116.
A novel hierarchical intelligent controller configuration is proposed using an artificial neural network as a control-mode classifier in the supervisory level and a set of pre-designed controllers in the lower level. Controller outputs are modified nonlinearly by the classifying signals in a structure resembling one artificial neuron with adaptively changed weights. The lower-level local controllers are implemented using neural networks. An illustrative example of this approach is based on the transient stabilization of a single-machine infinite-bus system studied in Flexible AC Transmission Systems (FACTS) research. 相似文献
117.
118.
采用锁相技术,对电子束曝光机工件台运动实现速度环的全数字控制。设计了数字差频积分回路和数字差频比例控制器,能有效消除速度的静态误差和改善系统的动态特性。 相似文献
119.
We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique.
This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning
steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations
between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced
by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential
in order to achieve good pattern definition. 相似文献
120.
Yasuo Koide T. Kawakami Masanori Murakami N. Teraguchi Y. Tomomura A. Suzuki 《Journal of Electronic Materials》1998,27(6):772-775
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe
grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage
(J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety
of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level
lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2. 相似文献