群时延精确设计的全差分四阶Bessel滤波器

采用MOS管有源电阻,提出了一种全差分R-MOSFET-C四阶Bessel有源低通滤波器,.通过调节工作于亚阈值区的CMOS管的沟道导纳补偿电阻值的大小,能抵消集成电路制造工艺中电阻值的一致偏差,实现Bessel有源滤波器群时延的精确设计.根据无源滤波器的状态方程完成有源滤波器的综合,应用3.3V,0.5μm CMOS工艺完成了群时延大小为0.75μs的四阶Bessel低通滤波器的管极计算机仿真,仿真结果表明所提电路正确有效,适于全集成.     

主动阻尼控制中的扩展加速度输出反馈法

正位置反馈(PPF)是一种能够显著提高结构模态阻尼的控制策略，但是这种策略在原理和应用中具有一定的局限性。本文在指出了传统的PPF控制器的优缺点基础上，提出一种扩展的加速度输出反馈控制方法AOEF，同时给出了最优AOEF控制器的设计计算方法。仿真计算和实验表明，在传感器／作动器同相的情况下，采用这种控制器的闭环系统具有无条件的稳定性，在非同相的情况下也能达到优良的控制性能。     

几种航空有源电子干扰装备的比较

本文对远距离支援干扰飞机、随队支援干扰飞机、机载自卫电子对抗系统以及最近国外正在大力发展的分布式电子干扰系统等几种航空有源电子干扰装备的作战对象、战术应用、功能、使用局限性等特点进行了比较 ,探讨了综合发展和运用这几型装备的重要意义     

系列尼古丁PVC膜选择性电极的研制

以尼古丁为研究对象 ,研制了一系列含有不同增塑剂 (苯二甲酸二辛酯、苯二甲酸二壬酯和癸二酸二辛酯 )和电活性物质 (尼古丁 四苯硼缔合物、尼古丁 硅钨酸缔合物、尼古丁 磷钨酸缔合物和尼古丁 雷氏盐缔合物 )的PVC膜电极。所有的 8支电极均对尼古丁盐酸溶液有Nernst响应。所制备的电极中 ,以尼古丁 四苯硼缔合物、尼古丁 硅钨酸缔合物、尼古丁 磷钨酸缔合物或尼古丁 雷氏盐缔合物为活性物的电极 ,其线性范围达到 10 - 4～ 10 - 1 mol/L ,以尼古丁 硅钨酸缔合物为活性物的电极线性范围达到 10 - 5～ 10 - 1 mol/L。电极响应的均匀性还在进一步的研究和改善中     

1,4,5,8-四氮杂氢化萘（2,3,-6,7）并双呋咱衍生物的合成

由1，4，5，8—四氮杂氢化萘(2，3，-6，7)并双呋咱经羟甲基化、酰化、硝化和叠氮化等反应合成出一系列热稳定的呋咱含能衍生物，并以^1HNMR、IR、MS、元素分析鉴定了其结构。     

PD雷达欺骗干扰方法浅析

概要介绍了PD雷达的抗干扰性能及其特点．并主要对PD雷达的欺骗干扰方法进行了一定的讨论。     

Influence of process variables on the drying of potato slices

Investigation of the effects of varying air velocity, slice thickness, and pre-treatment with sodium chloride solutions and surface active agents on drying potato slices indicated that the drying occurred entirely in the falling rate period and was controlled by the mechanism of liquid diffusion. The rate of drying, and therefore the diffusion coefficients, increased with the addition of sodium chloride and surface active agents. Diffusion coefficients were also influenced by air velocity and slice thickness, suggesting that the rate of drying of potato slices is controlled by a combination of internal and external resistances.     

一种基于自然数线性八叉树的优化构造算法

本文提出了一种基于自然数线性八叉树的优化构造算法。该算法以活动结点表为中间辅助结构，在图像输入过程中直接生成基于Ｎ码的八叉树叶结点．与常规构造算法相比，新提出的优化构造算法省去了Ｎ码的计算及合并过程，从而具有较高的时空效率．     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

Microstructure and thermal behavior of Sn-Zn-Ag solders

The microstructure and thermal behavior of the Sn-Zn-Ag solder were investigated for 8.73–9% Zn and 0–3.0% Ag. The scanning electron microscopy (SEM) analysis shows the Ag-Zn compound when the solder contains 0.1% Ag. X-ray diffraction (XRD) analysis results indicate that Ag₅Zn₈ and AgZn₃ become prominent when the Ag content is 0.3% and above. Meanwhile, the Zn-rich phase is refined, and the Zn orientations gradually diminish upon increase in Ag content. The morphology of the Ag-Zn compound varies from nodular to dendrite structure when the Ag content increases. The growth of the Ag-Zn compounds is accompanied by the diminishing of the eutectic structure of the Sn-9Zn solder. Differential scanning calorimetry (DSC) investigation reveals that the solidus temperature of these solders exists at around 198°C. A single, sharp exothermic peak was found for the solders with Ag content less than 0.5%. Liquidus temperatures were identified with the DSC analysis to vary from 206°C to 215°C when the Ag content ranges from 1.0% to 3.0%