Phase behavior,density, and crystallization of polyethylene in n‐pentane and in n‐pentane/CO2 at high pressures

The phase behavior and volumetric properties of polyethylene (PE) in solutions of n‐pentane and n‐pentane/CO₂ were studied in a temperature (T) range of 370–440 K at pressures up to 60 MPa. Measurements were conducted with a variable‐volume view‐cell system equipped with optical sensors to monitor the changes in the transmitted light intensity as the P or the T of the system was changed. Lower‐critical‐solution‐temperature‐type behavior was observed for all of the liquid–liquid (L–L) phase boundaries, which shifted to higher pressures in solutions containing CO₂. The solid–fluid (S–F) phase boundaries were investigated over a P range of 8–54 MPa and took place in a narrow T range, from 374 to 378 K in this P interval. The S–F phase boundary showed a unique feature in that the demixing temperatures showed both increasing and decreasing trends with P depending on the P range. This was observed in both the PE/n‐pentane and PE/n‐pentane/CO₂ mixtures. The density of these solutions were measured as a function of P at selected temperatures or as a function of T at selected pressures that corresponded to the paths followed in approaching the phase boundaries (S–F or L–L) starting from a homogeneous one‐phase condition. The data showed a smooth variation of the overall mixture density along these paths. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 2201–2209, 2003     

可拓知识空间和可拓知识网格模型(Ⅱ):可拓知识网格

第1部分中已介绍了可拓知识空间定义和相关操作，以及可拓知识空间关联函数计算方法。这一部分进一步建立可拓知识空间语义网、可拓知识网格和可拓知识网格服务，并给出实例和相关的分析讨论。     

V波段小型化低相噪频率综合器

本文研究了一种V波段超小型低相噪频率综合器,研制了L段捷变频频综、Ku波段取样锁相源、上变频组件、倍频器等四个小型化组件.为了得到较低的相位噪声和捷变频速度,本捷变频频综采用上变频-倍频方案,其中DRO PLS保证低相位噪声性能,L波段捷变频频综保证捷变频功能.该频综尺寸为100×80×30mm³,相位噪声低于-86dBc/Hz(1kHz),捷变频时间小于40μs,杂波抑制优于-60dBc.     

模拟信号的恢复及其误差研究

数模混合仿真中模拟信号的恢复及其误差对整个仿真过程具有重要影响。本文探讨了用零阶保持和一阶保持进行信号恢复的方法，比较了它们的误差及工作特点。特别指出了一阶保持中，由于存在积分器复原时间及数字机操作时间的影响而会带来附加的误差，因此一阶保持方法较难达到其理论的精度。     

两相异步电动机变频调速装置

主要讨论对称两相变频器主电路的结构以及介绍一种简单实用的磁链轨迹控制技术．     

A Topological Implementation for Motion Planning of a Robotic Arm

An efficient path planning algorithm based on topologic method is presented in this paper.The collision free path planning for three-joint robotic arm consists of three parts:partition of C-space,construction of CN and search for a path in CN.We mainly solved the problems of partitioning the C-space and undging the connectivity between connected blocks,etc.For the motion planning of a robotic arm with a gripper,we developed the concepts of global planning and local planning,and discussed the basic factors for constructing the planning system.In the paper,some evaluation and analysis of the complexity and reliability of the algorithm are given,together with some ideas to improve the efficiency and increase the reliability.At last,some experimental results are pesented to show the efficency and accuracy of the algorithm.     

论城市可持续性发展与地下空间利用

本文分析了目前制约我国城市可持续发展的最主要因素是低效率的土地利用方式 ,若使地上、地面、地下空间协调发展 ,合理科学的规划好地下空间 ,珍惜地下空间资源 ,健全地下空间法律法规 ,统一地下空间管理机构 ,则可高效率的利用土地。     

柳沟庄—窟窿山油藏储集层裂缝类型及特征

根据岩心描述、薄片观察、X－CT扫描以及钻井、测井等资料，研究了酒西盆地青西坳陷柳沟庄－窟窿山油藏裂缝性储集层的类型及特征，分析了控制裂缝发育的地质因素及裂缝对油气的控制作用，认为储集层裂缝有3种基本类型，即构造裂缝、构造熔蚀缝和饼状破裂，主要受构造应力场及构造位置等因素的控制。根据裂缝形态、充填特征及其相互关系，裂缝的形成主要有3个期次，其中喜马拉雅运动晚期形成的第三期理解缝对油气运移和聚集最有效。研究结果表明，裂缝是柳沟庄－窟窿山油藏主要的储集空间和控制油气富集的因素。     

油气微运移的烃类相态

微运移机制是目前油气化探等非地震直接找油的理论基础,只有研究清楚油气微运移的相态,才可能进一步研究微运移的机制;含油气水相是油气发生微运移最普遍和优先起作用的相态;在特定的地质条件下,不排除油气以其它相态发生渗漏的可能。     

Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni system

The In-Sn-Ni alloys of various compositions were prepared and annealed at 160°C and 240°C. No ternary compounds were found; however, most of the binary compounds had extensive ternary solubility. There was a continuous solid solution between the Ni₃Sn phase and Ni₃In phase. The Sn-In/Ni couples, made of Sn-In alloys with various compositions, were reacted at 160°C and 240°C and formed only one compound for all the Sn-In alloys/Ni couples reacted up to 8 h. At 240°C, Ni₂₈In₇₂ phase formed in the couples made with pure indium, In-10at.%Sn and In-11at.%Sn alloys, while Ni₃Sn₄ phase formed in the couples made of alloys with compositions varied from pure Sn to In-12at.%Sn. At 160°C, except in the In/Ni couple, Ni₃Sn₄ formed by interfacial reaction.