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91.
包装机中塑料薄膜常热式热封参数的实验研究 总被引:8,自引:6,他引:2
文中通过对包装机中常热式热封过程的分析及有效的实验,获得较为可靠的热封实验数据,并利用专业统计软件spss对实验数据进行处理,得到包装机中塑料薄膜的封口强度与操作参数之间的关系,为设计人员提供了一种获得最优操作参数的有效方法。 相似文献
92.
Six materials (stainless steel, nickel-base alloy, titanium, chromium, nickel and admiralty brass) are tested in chemical and biochemical synthetic seawaters. The biochemical seawater contains enzymes catalyzing oxidation of glucose (glucose oxidase), simulating the action of natural biofilms. The evolutions of free corrosion potential (Ecor) versus time, and of cathodic and anodic reactions are compared with those obtained in natural seawater. Then, electrochemical behavior is related to semi-conducting properties of passive films. When glucose oxidase is present, increase of Ecor versus time is only reported for materials presenting a n-type semi-conductor passive film, and whose cathodic reaction current is increased. On the contrary, when passive layers are p-type semi-conductors, cathodic and anodic reactions are increased, and lead to a global Ecor constant with time of immersion. It appears that interaction between bacteria, medium and materials includes evolution of semi-conducting properties of passive layers. 相似文献
93.
G.P. Potirniche 《Engineering Fracture Mechanics》2003,70(13):1623-1643
Crack tip plastic zone sizes and crack tip opening displacements (CTOD) for stationary microstructurally small cracks are calculated using the finite element method. To simulate the plastic deformation occurring at the crack tip, a two-dimensional small strain constitutive relationship from single crystal plasticity theory is implemented in the finite element code ANSYS as a user-defined plasticity subroutine. Small cracks are modeled in both single grains and multiple grains, and different crystallographic conditions are considered. The computed plastic zone sizes and CTOD are compared with those found using conventional isotropic plasticity theory, and significant differences are observed. 相似文献
94.
采用两步溶胶–凝胶法制备出 ATO(掺锑氧化锡)-SiO_2复合抗静电薄膜。通过 DTA-TG、XRD、SEM 对 薄膜的结构和形貌进行了表征,结果表明:抗静电复合薄膜表面均匀致密。薄膜中 SiO_2为无定形结构,ATO 的衍射峰 与 SnO_2一致。研究了 SnO_2的含量对薄膜导电性能、结合强度和透过率的影响,发现随 SnO_2含量增加 ?(SnO_2/ SiO_2)从 5 至 12.5,薄膜的表面电阻降低(从 1010ù/□降低到 108ù/□),薄膜的结合强度下降,薄膜的透过率降低(从 89.0%降至 84.2%),结合三方面性能,得出最佳 SnO_2的配比为:?(SnO_2/ SiO_2)=10。 相似文献
95.
B. Van de Moortéle 《材料科学技术学报》2003,19(6)
The homogeneous plastic flow of fully amorphous and partially crystallized Zr(41.2)Ti(13.8)Cu(12.5)Ni(10)Be(22.5) bulk metallic glass (Vitl) has been investigated by compression tests at high temperatures in supercooled liquid region. Experimental results show that at sufficiently low strain rates, the supercooled liquid of the fully amorphous alloy reveals Newtonian flow with a linear relationship between the flow stress and strain rate. As the strain rate is increased, a transition from linear Newtonian to nonlinear flow is detected, which can be explained by the transition state theory. Over the entire strain rate interval investigated, however, only nonlinear flow is present in the partially crystallized alloy, and the flow stress for each strain rate is much higher. It is found that the strain rate-stress relationship for the partially crystaltized alloy at the given temperature of 646 K also obeys the sinh law derived from the transition state theory, similar to that of the initial homogeneous amo 相似文献
96.
聚丙烯表面改性及与涂料的粘结 总被引:3,自引:2,他引:1
刘景江 《高分子材料科学与工程》1992,8(5):1-5
讨论了聚丙烯制品喷涂着色的优点及影响聚丙烯制品与涂料之间粘结强度的各种因素。综述和评价了对聚丙烯进行表面改性的必要性及各种表面改性方法。 相似文献
97.
98.
阐述了用AutoLisp程序模拟塑料熔体在2层复合膜机头内的流动情况,并介绍了复合膜机头的内部结构。 相似文献
99.
100.
Seong-Min Lee 《Metals and Materials International》2006,12(6):513-516
Based on empirical data, the present work provides a model to prevent filler-induced reliability degradation in plastic-encapsulated
LOC (lead-on-chip) packages. According to the model, the maximum size of the silica fillers included in the plastic package
body should be smaller than one half of the inter-distance between the device and its overlying lead-frame. In particular,
it is shown in the model that the spherical silica particles, which are sometimes trapped in the space between the top surface
of the device and the bottom of the lead-frame during the encapsulating process, can induce huge compressive stress on a specific
site of the integrated circuit pattern due to the thermal shrinkage of the plastic package body. Further, the present model
suggests that tiny fillers squeezed beneath a large trapping filler might directly attack the brittle layer of the device
pattern because the compressive force from the large filler particle can develop into huge compressive stress due to the reduced
load-carrying area. 相似文献