Wave dynamics on a thin-liquid film falling down a heated wall

The dynamics of a thin liquid film falling down a uniformly heated wall is studied. The model introduced by Kalliadasis et al. [J. Fluid Mech. 475 (2003) 377] for the same problem is revisited and its deficiencies, namely the prediction of a critical Reynolds number with 20% error, cured. For the energy equation a high-order Galerkin projection in terms of polynomial test functions is developed. It is shown that not only does this more refined formulation correct the critical Reynolds number, but it also gives, with an appropriate expansion close to criticality, the long-wave theory. Bifurcation diagrams for permanent solitary waves are constructed and compared with the solution branches obtained from different models. It is shown that, in all cases, the long-wave theory exhibits limit points and branch multiplicity, while the other models predict the continuing existence of solitary waves. Time-dependent computations show that the free surface and interfacial temperature approach a train of coherent structures that resemble the infinite-domain stationary solitary pulses.     

Optical switching properties of RCo2-type alloy thin films by electrochemical hydrogenation

The switchable optical properties of Pd-protected RCo₂-type Ho_0.6Mm_0.4Co₂ alloy thin films have been investigated in a KOH electrolyte. The reversible optical switching has been carried out simultaneously by measuring transmitted light through the thin film during electrochemical charging–discharging of hydrogen. The dependence of switching speed and cyclic durability of the film on the charging and discharging current density as well as concentration of KOH electrolyte has been studied. In addition, cyclic voltammetric measurements have been performed to examine the hydride formation and decomposition reactions.     

用于PET薄膜回收的螺杆设计

根据PET薄膜的特点和高分子熔融态流动理论，分析了挤出回收用螺杆的各段结构，及螺杆参数选择，设计出大长径比、深槽、双排气、高效专用螺杆。     

Breakdown of oil films and formation of residual films

The breakdown processes of oil films under quasi-static loading have been investigated by using a newly developed steel-oil-mercury system. The relationship between the thickness and breakdown ratio of a hexadecane film is represented by a single master curve independently of the indentation speed, indentation load, and temperature. The master curve shows that the breakdown process of hexadecane includes two stages; one is the decrement of the thickness without breakdown and the other is the decrement of the thickness with a drastic progress of breakdown. By solving a small amount of fatty acid in hexadecane, the thickness increases and the breakdown ratio decreases noticeably; a multilayer residual film supporting normal load is formed between two metal surfaces. Experiments at different temperatures reveal a negative relationship between the temperature and thickness of residual film, which indicates that the residual film is organized by physical interaction rather than chemical interaction. At least under a lower concentration, the residual film appears to consist of not only fatty acid molecules but also hexadecane molecules.     

多孔材料透过性能的表征

透过性能对用于过滤分离、流体混合、布气分流等方面的多孔材料是一项十分关键的质量指标。主要介绍了多孔材料透过性能的表征方式，包括流体流动的基本概念、层流条件下流体的透过性能表征、多孔材料透过性能的综合表征、气体透过多孔材料时渗透系数的具体表征等方面。     

基于光敏自组装多层膜的液晶光控取向膜

采用layer-by-layer(LBL)的方法，将基板依次在具有光敏双键的季铵盐水溶液和聚乙烯基苯磺酸钠水溶液中浸泡，石英基板表面形成了自组装多层沉积膜。经线性偏振紫外光辐照后，LBL多层膜表现出明显的紫外吸收各向异性。将两片带有各向异性薄膜的基板做成平行液晶器件。在正交的偏光显微镜下观察，发现取得均一、稳定的取向效果。该种光控取向膜有望用作LCoS微显示的取向层。     

多孔硅发光二极管的载流子传输特性研究

制备AI／多孔硅／c-Si／Al结构的多孔硅发光二极管，利用其I-V特性关系，以及在不同温度下其I-V特性的变化，结合多孔硅的特殊微结构及性质，分析了多孔硅发光二极管中载流子的产生和传输过程；通过比较其发光猝灭前后I-V特性的变化，解释了发光猝灭的原因。提出了如果在低电场下能够实现大量载流子在限制性Si微粒中复合．是提高多孔硅电致发光效率的一个途径。     

Electrical characterization of homoepitaxial diamond p–n junction

Electrical properties of homoepitaxial diamond p–n⁺ junction of boron (B)-doped p-type layer and phosphorus-doped n-type layer on Ib (111) diamond single crystal have been characterized. Current–voltage characteristics show a clear rectifying property with rectification ratio of over 10⁵ at ± 10 V. From capacitance–voltage characteristics, it is found that a spatial distribution of space-charge density N_i of the p–n⁺ junction is not uniform and N_i at a middle region of the space-charge layer formed at zero bias voltage is higher than that of other region of the space-charge layer. This peculiar characteristic can be explained by superposition of two effects; one is the deep dopant effect due to B atoms in the p-type layer, which makes to reduce N_i at around the edge of the space-charge layer formed at zero bias voltage. The other is the compensation of B acceptors by impurity atoms diffusing during the p–n⁺ interface and incorporating during the growth of p-type layer, which makes to reduce N_i at the vicinity of the p–n⁺ interface.     

化学气相沉积铜薄膜研究进展

本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。     

Evolution of grain structure in thin film reactions

In this paper, we examine, both experimentally and theoretically, the kinetics of formation and microstructure of product phases in thin film reactions, using the Nb/Al and Ti/Al systems as our prototypes. The results of calorimetry and microscopy studies are interpreted using simple kinetic and morphology models. In particular, the kinetic models employed here focus on the nucleation and growth components of the phase formation process and the morphology models provide a starting point for the classification of product grain structures. An erratum to this article is available at .