Structure and formation energy of steps on the GaAs(001)-2 × 4 surface

The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies _M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps).     

双辊铸轧机生产工艺对组织和性能的影响

就用双辊铸轧机(TRC)生产薄、宽铸轧带技术进行研究并优化铸轧工艺。研究结果表明：3mm厚的铸轧带不仅表面变形．而且整个厚度内部层都发生变形，表面层的铝基中具有较高的合金元素饱和度。     

Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors

In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p₂-Ga_0.8In_0.2As_0.19Sb_0.81/p₁-Ga_0.9In_0.1As_0.09Sb_0.91 and N₁-GaSb/n₂-Ga_0.9In_0.1As_0.09Sb_0.91/p-Ga_0.8In_0.2As_0.19Sb_0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga_0.8In_0.2As_0.19Sb_0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N₁-n₂-p structure is more sensitive than that with the p₁-side surface recombination velocity for the N-p₂-p₁ structure. In the N-p₂-p₁ structure with the incident light from the p₁-side surface, two-color detection is achieved.     

湘潭新大粉末冶金设备制造有限公司的一体化真空烧结炉

简要介绍了湘潭新大粉末冶金设备制造有限公司研制的一体化真空烧结炉的炉子结构、脱蜡系统、工艺气体的引入系统、设备的控制系统以及炉子性能的鉴定结果。     

浅析当前环境下国有资产的现状和管理对策

改革开放使中国经济实现了持续高速的发展。然而,随着改革的不断深入,国有资产面临着在新经济环境下的角色转换,在此过程中由于各种原因每年有数百亿元的国有资产流失,所以,国有资产的保值增值成为现阶段乃至将来一段时间我国政府的重大经济课题。本文对国有资产的历史和现状进行了分析并从多角度提出了一些管理方面的看法。     

核壳型铁钴纳米复合材料的制备及其性能

采用多元醇还原工艺和自组装技术,在微米级Fe粉表面包覆纳米Co粒子,一步法制备了一种具有核壳结构的复合磁性微球,用SEM表征了其相组成和形貌,用VSM测试了磁滞回线,初步研究了磁学性能。结果表明:用该法制备的核壳型Fe/Co纳米复合材料表面包覆致密,其比饱和磁化强度和矫顽力介于微米铁粉和纳米钴粉之间。     

轻钢结构浅析

轻钢结构作为一种新型结构在近几年发展很快，应用范围也日趋广泛。主要针对轻钢结构的特点，结合实际工程设计，对轻钢结构现状、发展进行了阐述和分析。     

Synthesis, structure and fluorescence properties of a highly stable indium(III)-2,5-pyridinedicarboxylate coordination polymer

The hydrothermal reaction of 2,5-pyridinedicarboxylic acid (H₂PDC), diethylene triamine and In(NO₃)₃·4.5H₂O gave rise to a two-dimensional (2D) coordination polymer In(OH)(2,5-PDC). This compound crystallizes in the orthorhombic space group Iba2, with cell parameters, a = 12.656(3) Å, b = 20.114(4) Å, c = 6.2216(1) Å, V = 1583.9(5) Å³ and Z = 8. Its structure contains one-dimensional In–O–In–O– chains, which are further linked by 2,5-PDC ligands into a 2D supramolecular neutral framework. The adjacent 2D layers are parallel with each other and construct a three-dimensional framework via hydrogen bands. At room temperature, the compound exhibits intense photoluminescence. On the basis of the results of TG/DTA analyses, the structure is thermally stable up to 390 °C.     

表面引发剂对熔融铝合金直接氧化生长的影响

为了控制熔融铝合金直接氧化法制备Al2O3/Al复合材料的氧化生长,采用ZnO,SiO2和MgO3种表面引发剂,研究它们对Al-Si-Zn合金氧化生长过程及Al2O3/Al复合材料组织形貌的影响.结果表明:与未使用引发剂时相比,使用SiO2,ZnO或MgO表面引发剂制备的粉末都能显著地缩短Al-Si-Zn合金的氧化生长孕育期,提高合金氧化生长速率,改善复合材料的胞状生长方式,提高复合材料的组织均匀度和致密度,为实际生产应用提供了依据.实验发现:ZnO表面引发剂的使用效果最为突出,其最佳添加量为12mg/cm2.     

异形柱框架结构设计方法分析与参数控制

近年来,异形柱框架结构(框轻结构体系),因其能较好地满足建筑使用上和结构性能上的要求,而逐步得到了推广应用,并被列为建设部首批住宅建设新技术推荐目录。但异形柱框架结构设计目前还没有可依据使用的国家标准和行业标准。本文根据对江苏省地方标准《钢筋混凝土异形柱框架结构技术规程》(DB32/512-2002)的理解,结合笔者设计实践经验,提出个人看法,供同行参考。