High-temperature,high-pressure thermophysical measurements on liquid zinc

Wire-shaped zinc samples were resistively volume heated as part of a fast-capacitor discharge circuit. Time-resolved measurements with submicrosecond resolution of the current through the specimen, the voltage drop across it, and the thermal expansion of the specimen as a function of time allow determination of the enthalpy, electrical resistivity, and density at different temperatures up to superheated liquid states of zinc far above the normal boiling point. High static pressures, up to 3800 bar of the ambient medium water, were used. An estimate of the critical pressure for zinc is given by investigations of the stability of the sample with a framing CCD camera, taking pictures of different samples varying the ambient static pressure. The critical volume and the critical temperature are obtained by means of an extrapolation of measured data at different pressures.Paper presented at the Fourth International Workshop on Subsecond Thermophysics, June 27–29, 1995, Köln, Germany.     

Influence of two-step process and of different stoichiometric ratios on morphologies generated in castor oil epoxy resins

Phase separation during polymerization was studied in a model system consisting of a diepoxide based on diglycidyl ether of bisphenol A (DGEBA), variable amounts of ethylenediamine (EDA) and the mass of castor oil (CO) necessary to obtain a mass fraction equal to 0-15 in a final system where the stoichiometric ratio of amine to epoxy equivalents, r, was equal to 1. A two-step polymerization process was performed by curing first a system with r = 0-5, during variable times before phase separation, and then carrying the system to r = 1. Thermodynamic analysis of samples with different r values led to a linear relationship between the Flory-Huggins interaction parameter and r. The concentration (P) and average size (D?) of dispersed-phase particles followed opposite trends, i.e. P increased while D? decreased, when either r was increased or the time of curing in the first step of a two-step process was decreased. This was explained by assuming that the competition between nucleation and growth was determined by the viscosity at the cloud point, η_cp. Low values of η_cp favoured growth over nucleation and led to fewer but larger particles.     

Relaxation phenomena caused by equilibration of point defects

Relaxation phenomena due to equilibration of point defects in metals are reviewed. The relaxation effect in specific heat observed in tungsten and platinum confirms that in both cases the nonlinear increase in the high-temperature specific heat has to be attributed to point-defect formation. Relaxation phenomena observed by measurements of electrical resistivity and positron annihilation are also considered. The comparison of the data seems to be favorable for the conclusion that all the phenomena are of one origin.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

松香及其衍生物在浮选分离中的应用

介绍了松香的来源、化学组成及理化性质；讨论了松香及其衍生物在非硫化物矿浮选分离、有色金属离子的浮选分离以及从水溶液中浮选分离有机物等方面的应用情况。     

新型缆用热熔胶的研制

分析了通信线缆用 YH- 4热熔胶组成原料的性能和作用 ,找出影响耐环境高温性能的主要原因 ,并对新研制出的耐环境高温性能 YH- 5热熔胶作了一些分析和探讨 .     

Stereological estimation of the total volume of MR visible brain lesions in patients with multiple sclerosis

Point counting represents a convenient and efficient technique for estimating the area of transects through multiple sclerosis (MS) lesions on magnetic resonance (MR) images obtained for sections through the brain. When sectioning has been performed according to the Cavalieri method, unbiased estimates of the total volume of MR-visible MS plaques can be obtained with a precision of 3–5% in 5–10 min.     

A new approach to the mechanism of chlorine evolution: Separate examination of the kinetic steps using ac impedance on a rotating thin ring electrode

In the absence of a bulk diffusion effect, it is shown for the first time that the impedance spectra for the chlorine evolution reaction on a rotating thin ring electrode comprise three consecutive semicircles in the capacitive half of the complex plane. The first (highest frequency) semicircle is due to the charge-transfer resistance for chloride discharge and the simultaneous chlorine adsorption coupled to the double-layer capacitance. The second semicircle (around 5 Hz) is due to the adsorption and desorption of a chlorine intermediate. The third (lowest frequency, around 0.5 Hz) semicircle is due to the relaxation of surface oxygen species. The impedance data allow the steps of the overall reaction to be examined individually. On a Pt surface the rate of chloride discharge and simultaneous chlorine adsorption (the admittance of the first semicircle) is first order with respect to chloride concentration and has a potential-dependence close to 58 mV/decade. The rate of the adsorption and desorption process (the admittance of the second semicircle) is second order with respect to chloride concentration, and has a potential dependence close to 30 mV/decade. The time constant for the adsorption/desorption processes is ca 20 ms, independent of electrode potential in the range studied. These features are consistent with a mechanism in which a faster discharge reaction (Cl⁻ Cl_ad + e) is followed by a slower surface combination reaction (2Cl_ad → Cl₂), but inconsistent with mechanisms in which ion + atom desorption is predominant, the initial chloride discharge is slow, or a unipositively charged chlorine species is involved.     

低功率激光治疗血管性头痛24例

低功率激光穴位照射治疗血管性头痛24例,总治愈率54.2%,好转率29.2%,无效率16.6%,但头痛部位、治疗经穴的不同,疗效差别很大。