P-type double gate junctionless tunnel field effect transistor

We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor （P-DGJLTFET） and the impact of variation of different device parameters on the performance parameters of the P-DGJLTFET is discussed. We achieved excellent results of different performance parameters by taking the optimized device parameters of the P-DGJLTFET. Together with a high-k dielectric material （TiO2） of 20 nm gate length, the simulation results of the P-DGJLTFET show excellent characteristics with a high IoN of ～ 0.3 mA/μm, a low/OFF of ～ 30 fA/μm, a high ION/IOFF ratio of ～ 1×10^10, a subthreshold slope （SS） point of ～ 23 mV/decade, and an average SS of ～ 49 mV/decade at a supply voltage of -1 V and at room temperature, which indicates that PDGJLTFET is a promising candidate for sub-22 nm technology nodes in the implementation of integrated circuits.     

净化厂房排烟设置的几点建议

厂房内的工艺设备造成排烟管道着火,火势顺着排烟管道蔓延至技术夹层及屋面,造成技术夹层及屋面相关设备、系统完全损毁。建议风管（特别是工艺排风管道）穿过设备及风管密布的技术夹层时加设防火阀,且技术夹层设置机械排烟系统。     

平顶山矿区深部矿井动力灾害预测方法与应用

煤与瓦斯突出、冲击地压等矿井动力灾害严重威胁着我国深部矿井安全高效生产,当前总体缺乏准确的预测理论与方法。为了提高平顶山矿区深部开采阶段动力灾害发生的预防与治理水平,在分析矿区自然地质动力条件的前提下,以平顶山东部矿区为研究目标,基于最大主应力、应力梯度等因素对矿区动力灾害发生的潜在危险进行了预测分区,发现地形曲率对平顶山东部矿区的煤与瓦斯突出概率产生较大影响。平顶山东部矿区的正曲率半径范围内煤与瓦斯突出比率占总突出次数的80. 21%。同时,基于煤与瓦斯突出系统的能量特征,确定了平顶山东部矿区煤与瓦斯突出的临界能量为106J。在前期利用地质动力区划方法划分Ⅰ～Ⅴ级活动构造的研究基础上,进一步考虑开采活动作用的影响,明确目标煤层、目标采区动力灾害发生的模式,进行动力灾害二级预测。对八矿、十矿和十二矿规划区域划分Ⅵ级和Ⅴ级断裂构造,确定该区域断裂构造的分布特征和相互作用关系,建立相应的空间信息分析系统,分析活动构造的活动规律,发现平顶山东部矿区的煤体瓦斯主要受控于褶曲构造、断裂构造和构造之间的复合、联合、组合等地质构造。煤与瓦斯突出事故发生在地质构造带的次数占总次数的69. 6%。同时,确定了平顶山东部矿区的区域断裂构造的分布方式,Ⅵ级和Ⅴ级活动断裂区煤与瓦斯突出的局部分布特征。     

综合考虑水平和竖向地震作用的边坡稳定数方法

基于泰勒稳定数方法的拟静力分析是土坡地震稳定分析方法之一,该方法可以考虑水平地震作用得出地震作用下土坡的安全系数,但忽略了竖向地震作用的影响.为同时考虑水平和竖向地震作用,在前人工作的基础上,通过理论分析和公式推导,本文建立了一个能够同时考虑水平地震作用和竖向地震作用的解析公式,形成了改进的泰勒稳定图方法和计算流程.本...     

高频辐射噪声近程传播特性研究

针对近程反鱼雷武器系统建设问题,研究了鱼雷高频辐射噪声的近场传播特性。采用小斜率近似（SSA）方法研究了粗糙海面的声散射特性,给出了具有高斯分布粗糙海面的2阶～4阶SSA双站散射系数计算公式,讨论了2阶SSA双站散射系数随海面粗糙度及入射角度不同的变化规律。并利用SSA双站散射系数计算了水下高频辐射噪声散射声场。仿真结果表明,粗糙海面的散射效应对高频辐射噪声传播产生较大影响,在研究声源/接收器位于近海面的高频辐射噪声传播特性时,应充分考虑海面的散射效应。本文的研究为分析浅海目标声散射特性时,是否需要考虑海面（海底）所引起的多途效应提供了理论依据。     

Performance optimization of MOS-like carbon nanotube-FETs with realistic source/drain contacts based on electrostatic doping

Due to cartier band-to-band-tunneling(BTBT)through channel-source/drain contacts,conventional MOS-like Carbon Nanotube Field Effect Transistors(C-CNFETs)suffer from ambipolar conductance,which deteriorates the device performance greatly.In order to reduce such ambipolar behavior,a novel device structure based on electrostatic doping is proposed and all kinds of source/drain contacting conditions are considered in this paper.The non-equilibrium Green's function(NEGF)formalism based simulation results show that,with proper choice of tuning voltage,such electrostatic doping strategy can not only reduce the ambipolar conductance but also improve the sub-threshold perfor-mance,even with source/drain contacts being of Schottky type.And these are both quite desirable in circuit design to reduce the system power and improve the frequency as well.Further study reveals that the performance of the proposed design depends strongly on the choice of tuning voltage value,which should be paid much attention to obtain a proper trade-off between power and speed in application.     

Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

A new concept of nanoscale MOSFET, the Gate Modulated Resonant Tunneling Transistor (RT-FET), is presented and modeled using 3D Non-Equilibrium Green’s Function simulations enlightening the main physical mechanisms. Owing to the additional tunnel barriers and the related longitudinal confinement present in the device, the density of state is reduced in its off-state, while remaining comparable in its on-state, to that of a MOS transistor without barriers. The RT-FET thus features both a lower RT-limited off-current and a faster increase of the current with V_G, i.e. an improved slope characteristic, and hence an improved I_on/I_off ratio. Such improvement of the slope can happen in subthreshold regime, and therefore lead to subthreshold slope below the kT/q limit. In addition, faster increase of current and improved slope occur above threshold and lead to high thermionic on-current and significant I_on/I_off ratio improvement, even with threshold voltage below 0.2 V and supply voltage V_dd of a few hundreds of mV as critically needed for future technology nodes. Finally RT-FETs are intrinsically immune to source-drain tunneling and are therefore promising candidate for extending the roadmap below 10 nm.     

库区滑坡涌浪数值模拟方法研究进展

对近年来库区滑坡涌浪涉及的边坡失稳、滑动、涌浪产生和传播这4个阶段研究中采用的数值模拟方法的研究进展和发展趋势进行了综述,重点归纳总结了边坡滑动过程以及涌浪产生过程的数值模拟方法的研究成果,指出滑坡涌浪从库区边坡失稳到涌浪传播是一个完整连续的过程,今后需要在目前各个阶段独立研究的基础上融合固体力学和流体力学两类学科中的相关研究方法,建立库区滑坡涌浪全程数值模拟方法,实现滑坡涌浪的全过程模拟。     

部分样本雷达信号的参数估计

线性调频信号参数检测是SAR对抗的一个重要问题 ,其估计参数的方法有多种 ,但对于分析部分样本LFM信号而言 ,绝大多数估计方法的误差很大。在用快速相关解线调估计和分析部分样本LFM信号存有误差的基础上 ,提出了一种改进的快速相关解线调算法运用于部分样本LFM信号的起始频率和调频斜率参数的估计 ,减小了误差。最后对改进的算法进行了仿真 ,证实了改进后的有效性。     

基于互联网技术的自然灾害及突发事件应急处置方案研究

近年来,我国自然灾害、事故灾难等突发事件不断增加,对社会稳定性的提升产生阻碍,对我国政府管理提出了挑战。为了降低自然灾害与突发事件产生的影响,相关部门必须结合实际,建立科学、完善的应急处置方案,并严格按照方案执行。文章对此进行了分析。