石膏转化制硫酸钾结晶动力学及结晶添加剂研究

研究了浓氨介质中石膏与氯化钾直接转化制硫酸钾的结晶动力学及结晶添加剂的作用效果。结果表明 ,硫酸钾在氨介质中的成核速率与晶体生长速率、悬浮密度、搅拌速率存在如下关联式 :B0 =5 .64 13×10 8G3.32 0 8Mt0 .0 559np0 .2 92 8。加入异丙醇、OP乳化剂及十二烷基苯磺酸钠等添加剂 ,可使硫酸钾结晶产品纯度提高 ,晶体形态整齐均匀     

液态金属离子源发射尖的制备工艺与技术

发射尖是液态金属离子源(LMIS)的关键部件之一，其性能的优劣直接影响到整个离子源的工作稳定性。通过对系统软件和硬件的设计，开发了一套发射尖自动腐蚀装置，该装置可以对发射尖腐蚀过程中的速度和深度以及腐蚀电压进行控制，实现发射尖腐蚀工艺的重复性、可靠性，从而为液态金属离子源以及聚焦离子束系统的研制、开发提供了一个有效的辅助工具。     

应用AR模型的IMU误差系数漂移预测研究

将影响IMU误差系数漂移并难于分离的多种因素综合为一种因素，假定IMU误差系数的漂移由一特定系统所引起，从而采用时间序列建模方法进行IMU误差系数漂移的预测。该方法具有消除各因素具体分析中的不确定性并减少其工作员的优点。文中描述了其原理，对某惯组的33个误差系数进行了时间序列建模与预测并得到有效的结果。最后还阐述了存在的问题及其解决方法。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

减振器在自导系统结构设计中的应用

通过对减振器结构设计的理论分析，建立了减振器的数学模型，同时通过设计的模拟装置对减振效果进行了实测，效果良好。     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

真空微电子荧光平板显示器件的实验研究

真空微电子荧光平板显示器件的实验研究刘杰明，李志能，陈秀峰（浙江大学信息与电子工程学系）关键词：真空微电子，反应离子刻蚀一、引言近十年来，随着真空微电子学的崛起，利用微细加工技术，使真空元器件集成化和高性能化已成为可能，一种新型场致发射阵列真空荧光平...     

离子注入中污染的产生及防护

本文概述了离子注入过程中污染产生的原因和防止污染的措施，特别强调了对微粒污染和金属污染的防护以满足ＵＬＳＩ加工对离子注入的要求。     

泡沫夹克管的防水与保温

针对辽河油田应用泡沫夹克管道的情况，从泡沫夹克管的制作和敷设施工直到设计等环节，结合泡沫夹克管防腐保温的机理，并从理论与实践相结合角度出发，提出导致泡沫夹克管腐蚀损坏的最主要原因是管道保温层漏水，进而提出了在设计和施工过程中提高泡沫夹克管质量的措施。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.