测量低损耗薄膜材料介电常数的标量法

依据被测介质性质,在现有实验设备条件下,提出了一种标量法测量低损耗薄膜介质介电常数的新方法.该方法利用传输线法测量原理,先测量待测介质损耗,间接得到反射系数,由反射系数与介电常数关系式,推导得出待测介质的介电常数.该方法有样品容易制作,测量简单准确等特点.通过测量实例的误差分析,指出标量法测量薄膜材料介电常数的不足,提出相应的改进措施.     

射频磁控溅射ZnO薄膜的微结构与光学特性

研究了膜厚对ZnO薄膜微结构和光学性能的影响。采用射频磁控溅射法在单晶硅(111)和玻璃基片上制备了不同厚度的ZnO薄膜。通过X射线衍射、原子力显微镜和紫外可见光谱对薄膜进行了表征。结果表明薄膜结晶性能良好,在(002)晶面具有明显的c轴取向。随着薄膜厚度的增加,透射率下降,吸收边红移,禁带宽度逐渐减小。     

一种基于湿纸编码和图匹配理论的直方图保持隐写算法

该文结合隐写码、湿纸码和图匹配理论提出一种具有高嵌入效率的且可保持载体图像一阶直方图的双层嵌入隐写算法。首先构造出一条新的四进制的隐写信道,然后在该信道的LSB(Least Significant Bit)层和次LSB层分别使用二元隐写码和湿纸码嵌入秘密消息,这样即可确定出需要修改的元素,接着构造出一个图,最后使用图论中匹配算法寻找一种减小失真且保持直方图的修改方式。性能分析和实验结果表明：在嵌入相同长度秘密消息的情况下,新算法的PSNR、嵌入效率和保持一阶直方图效果均优于隐写软件Steghide。     

脉冲准分子激光沉积Mg/Ag掺杂薄膜

基于梯度掺杂功能薄膜材料在工业应用中的需要、通过金属掺杂对新材料改性研究的需要 ,用单束激光交替作用于两相异靶材 ,制备了Mg Ag组分比为 0 .9的掺杂薄膜     

基于分形理论的红外图像边缘检测

提出了利用分形理论进行红外图像边缘检测的方法,比较了根据单一分形维数和根据多尺度分形维数两种方法的边缘检测结果,从而得出：分表理论可以用于红外图像的边缘检测,并且根据多尺度维数的方法能获得较好的边缘检测结果。     

多孔侧肋双层微通道热沉构形优化

建立了多孔侧肋双层微通道复合热沉模型,选取最大热阻最小化为优化目标、热沉单元端面纵横比为优化变量,在热沉总体积和流体区域体积占比给定的条件下,对复合热沉进行了构形优化,并分析了冷却剂入口速度、多孔材料孔隙率、上下通道高度比、流体区域体积占比、肋厚比等参数对热沉最优构形的影响.结果表明:给定初始条件,优化热沉单元端面纵横比,可使最大热阻减小21.19％;在热沉单元端面纵横比较小时,减小孔隙率有利于降低最大热阻,而在热沉单元端面纵横比较大时,存在最优的孔隙率使得最大热阻最小;上下通道高度比和肋厚比的改变均未影响热沉最优构形.     

Sensitization of zinc oxide photoanode with an indoline dye

A dye‐sensitized solar cell (DSC) made of nanoporous ZnO film on aluminum‐doped zinc oxide (ZnO/AZO) transparent substrate has higher solar‐to‐electric energy conversion efficiency than a DSC consisting of nanoporous ZnO film deposited on conventional fluorine‐doped tin oxide (ZnO/FTO) transparent substrate. The ZnO/AZO DSC gave an overall conversion efficiency of 7.2% whereas the ZnO/FTO yielded a conversion efficiency of 4.5%. The film‐substrate orientation and higher light harvesting of the nanoporous ZnO film on the AZO after heating in air are mainly attributed to the higher energy conversion efficiency of the ZnO/AZO DSC. Copyright © 2012 John Wiley & Sons, Ltd.     

Characterization of amorphous Ni-Si binary alloy films by flash evaporation

We previously reported on an extremely small temperature coefficient of resistivity (TCR) of thin amorphous Ni-Si film resistors fabricated by new flash evaporating method, which have a wide range of resistivity.¹ In the present paper, we describe the structural and chemical properties of these films for the purpose of clarifying the cause of resistive change of films resulting from heat treatment. X-ray diffraction patterns show that Ni-Si films with greater than 20 wt.% Si remains predominantly amorphous after heat treatment. Changes in composition and binding energy of the films resulting from heat treatment are measured by means of XPS. Electrical characteristics are also investigated as a function of Si concentration and temperature. The resistance variations resulting from heat treatment are found to originate from a structural change. The activation energy needed for this change is obtained by analyzing the extent of change during isothermal heating and found to vary from 1 eV to 2.5 eV with increasing Si content from 20 wt.% to 80 wt.%.     

有耗分形粗糙面电磁散射的相位微扰法

本文采用Weierstrass－Mandelbrot分形函数描述粗糙表面,根据粗糙面的电磁散射理论,利用相位微抗法推导出有耗分形粗糙介质表面电磁散射系数的理论计算公式。     

高度取向ZnO薄膜的介电和光波导特性研究

用溶胶凝胶法在不同的基片上制备了具有高度 ｃ 轴即（００２）取向的 Ｚｎ Ｏ 薄膜,研究了溶剂、稳定剂等对合成的先体溶液的影响。对薄膜的 Ｘ Ｒ Ｄ 分析表明随热处理温度的增加,ｃ 轴取向度增大,并且薄膜的晶粒尺寸在 ３００ ° Ｃ～５００ ° Ｃ 范围内增幅较大。用端面耦合的方法测量了制备在 Ｓｉ Ｏ２／ Ｓｉ（１１１）基片上薄膜的波导损耗,即随热处理温度的增加,波导损耗增大,主要来源于 Ｚｎ Ｏ 薄膜与 Ｓｉ Ｏ２ 的界面及晶粒的散射。制备在 Ｐｔ／ Ｓｉ Ｏ２／ Ｓｉ（１１１）基片上薄膜的相对介电常数为 ７～１３,电阻率则为 １．７×１０４ Ω·ｃｍ ～９．８×１０５ Ω·ｃｍ 。