实验中心设备浪涌电压的产生和抑制

很多情况会引发网管中心或实验中心数据线、数据设备浪涌或瞬变电压的产生.这些浪涌电压有时可以达到几百甚至上千伏特,浪涌电流可这几百安培.如此高的电压电流,轻则引发系统逻辑错误,重则直接损坏硬件设备,或使系统崩溃.分析浪涌产生的机制和诱因,通过案例给出几种防止浪涌产生、以及降低浪涌破坏程度的方法.     

Carrier-concentration dependence of velocity-field characteristics in ln0.53Ga0.47 as

The doping dependence of the velocity-field characteristic in InGaAs has been investigated by an analysis of measurements with transferred-electron devices. The electron peak velocity has been determined directly as a function of electron concentration and low-field mobility. The carrier-concentration dependence of the velocity-field characteristic has been deduced by comparing experimental and theoretical transient device behaviour. The experimental results support a theoretical approach for the velocity-field characteristic which has been proposed recently.     

DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes

The presence of hole traps has been studied by deep level transient spectroscopy (DLTS) characterization of low carrier densityp-type GaAs grown by MBE on p⁺-GaAs substrates using Al and Co Schottky contacts. The results obtained indicate the presence of several hole traps with energy levels of between 0.06 and 0.65 eV above the valence band in concentrations up to 2 × 10¹²/cm³. Some of these defects,e.g. Cu, are ascribed to system-, source-or substrate-related impurities, but the origin of several other defects is unknown.     

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

We have investigated electron emission from self-assembled In_0.5Ga_0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4×10⁻¹⁸ cm², is associated with an electron quantum level in the In_0.5Ga_0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.     

基于CMOS影像传感器的血氧饱和度监测系统

介绍了脉搏血样饱和度检测的理论基础与重要的临床应用价值。提出了一种基于CMOS影像传感器的脉搏血氧饱和度监测系统,用CMOS传感器阵列取代了传统血氧仪中的光敏探测,实现了血氧饱和度及脉搏波的无接触测量。阐述了其在组织发育、伤口诊断、病变的提前预测等场合的潜在应用价值。实验结果表明,由于摄像头不能够有效屏蔽外界光源噪声的干扰,所设计样机较传统的血氧仪测得的饱和度值偏低,误差偏大,从而进一步提出减小误差提高精度的方案构想。     

基于SP6120芯片的负载点电源模块设计

介绍了电源芯片SP6120的内部电路、工作原理以及外部引脚,通过一个典型应用实例,详细论述了基于此芯片的外围电路和关键器件的参数设计,以及优化PCB设计的要点,并给出该设计的输出波形和测试结果。     

基于平面肖特基二极管的太赫兹频段倍频器的研究

基于研究肖特基变容二极管的半导体层结构分析与建模,通过研究太赫兹平面肖特基势全二极管半导体材料的 物理层结构,分析二极管结构的电磁效应及其频率响应特性。研究D 频段变容二极管高效率倍频器技术,在太赫兹频段 倍频器的性能对整个接收机的性能有着至关重要的影响。要实现高频率,高功率,宽频带,高效率,低噪声太赫兹倍频 技术是太赫兹技术领域的核心研究方向之一。研究基肖特基二极管倍频器的关键技术,分析了国内外现状及发展动态。     

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

Extended defects on the top surface of a 250-μm-thick free-standing GaN sample, grown by hydride vapor phase epitaxy (HVPE), were studied by deep level transient spectroscopy (DLTS) and scanning surface potential microscopy (SSPM). For comparison, similar studies were carried out on as-grown HVPE-GaN samples. In addition to the commonly observed traps in as-grown HVPE-GaN, the DLTS measurements on free-standing GaN reveal a very high concentration of deep traps (∼1.0 eV) within about 300 nm of the surface. These traps show nonexponential capture kinetics, reminiscent of those associated with large defects, that can accumulate multiple charges. The SSPM measurements clearly reveal the presence of charged microcracks on the top surface of the sample. It appears that the “giant traps” may be associated with these microcracks, but we cannot rule out the involvement of other extended defects associated with the near-surface damage caused by the polishing/etching procedure.     

On the prediction of groundwater mound formation due to transient recharge from a rectangular area

Recharge to the aquifer leads to the growth of a groundwater mound. Therefore, for the proper management of an aquifer system, an accurate prediction of the spatio-temporal variation of the water table is very essential. In this paper, a problem of groundwater mound formation in response to a transient recharge from a rectangular area is investigated. An approximate analytical solution has been developed to predict the transient evolution of the water table. Application of the solution and its sensitivity to the variation of the recharge rate have been illustrated with the help of a numerical example.Notations a = Kh/e [L²/T] - A = aquifer's extent in the x-direction [L] - B = aquifer's extent in the y-direction [L] - e = effective porosity - h = variable water table height [L] - h ₀= initial water table height [L] - h = weighted mean of the depth of saturation [L] - K = hydraulic conductivity [L] - m, n = integers - P = constant rate of recharge [L/T] - P ₁+P₀= initial rate of transient recharge [L/T] - P ₁= final rate of transient recharge [L/T] - s = h ²–h ₀ ² [L²] - t = time of observation [T] - x,y = space coordinates - x ₂–x₁= length of recharge area in x-direction [L] - y ₂–y₁= width of recharge area in y-direction [L] - z = decay constant [T^-1]     

抽水蓄能电站中水力干扰下的过渡过程及其稳定问题的研究

高水头抽水蓄能电站中，常采用一洞多机系统，所以机组之间水力联系紧密，本文建立了对水力干扰进行过渡过程计算所必须的既能进行大波动计算又可进入小波动的数学模型，并编制了计算程序，通过计算研究了部分机组停机过程中，其余机组在水力干扰下的过渡过程及稳定问题。