Reconfigurable approximate pattern matching architectures for nanotechnology

Approximate pattern matching is comparing an input pattern with a target pattern with a specified error tolerance. This ability to compensate for real-world sensor errors makes approximate pattern matching an ideal choice for a wide range of applications. This paper shows that two n-bit patterns may be matched with a single stage nanotechnology architecture using 2n+1 unit area resonant tunneling diodes (RTDs) and one RTD of 1.5 times the unit area. This architecture is reconfigurable for any target pattern and any error tolerance. We analyze current and power characteristics of the architecture and develop configurations to minimize the same. The robustness of the architecture to variations in device characteristics is also investigated.     

激光偏振参量对电离电子能量的影响

以准静态隧道电离理论为基础 ,计算并讨论了不同激光偏振参量对基于光场感生电离电子碰撞机制的系统的电离电子能量的影响 ,结果表明 ,随着偏振参量值的减小 ,在电离时刻的峰值处 ,电离电子的剩余能量反而变大     

纳米材料科学与技术展望

综述了纳米材料的基本效应 ;展望了纳米材料科技的发展 ;提出了未来纳米材料科技的研究重点和方向     

双量子环的隧穿电导和隧穿磁电阻

研究了双量子环的隧穿电导和隧穿磁电阻,研究结果表明:隧穿电导和隧穿磁电阻都随半导体环增大做周期性等幅振荡。δ势垒、Rashba自旋轨道耦合、AB磁通对隧穿电导或隧穿磁电阻的影响各不相同。隧穿磁电阻随AB磁通增强发生周期性等幅振荡,并随φ0角的减小而增大。两电极磁矩方向反平行时,隧穿磁电阻恒为零。     

反平行磁电垒结构中二维电子气体的输运性质

 本文对反平行磁电垒结构中二维电子气体的输运性质进行了详细的研究.利用传递矩阵的方法计算了电子气体隧穿磁电垒结构的传输概率和电导率,讨论了电势垒高度的变化对传输概率和电导率的影响.结果表明,该系统中不存在自旋过滤和自旋极化现象,电子气体可实现理想的共振隧穿,波矢过滤等.     

Direct Observation of Fe-Ge Ordering in Fe5−xGeTe2 Crystals and Resultant Helimagnetism

Microscopic structures and magnetic properties are investigated for Fe_5−xGeTe₂ single crystal, recently discovered as a promising van der Waals (vdW) ferromagnet. An Fe atom (Fe(1)) located in the outermost Fe₅Ge sublayer has two possible split-sites which are either above or below the Ge atom. Scanning tunneling microscopy shows √3 × √3 superstructures which are attributed to the ordering of Fe(1) layer. The √3 × √3 superstructures have two different phases due to the symmetry of Fe(1) ordering. Intriguingly, the observed √3 × √3 ordering breaks the inversion symmetry of crystal, resulting in substantial antisymmetric exchange interaction. The temperature dependence of magnetization reveals a sharp magnetic anomaly suggesting helical magnetism of the Fe_5−xGeTe₂ due to its non-centrosymmetricity. Analytical study also supports that the observed ordering can give rise to the helimagnetism. The work will provide essential information to understand the complex magnetic properties and the origin of the new vdW ferromagnet, Fe_5−xGeTe₂ for future topology-based spin devices.     

地震反射波法技术及其在隧道超前地质预报中的应用研究

隧道在施工中不可避免地会遇到诸如溶洞、突水、坍塌等常见的地质灾害。为了将地质灾害影响程度降到最低,施工前进行超前地质预报是十分必要的。介绍反射波法的原理和沪蓉西主干线扁担垭隧道现场实际应用情况,预报结果印证该方法能够取得令人较为满意的效果。     

Anti‐Ferromagnet Controlled Tunneling Magnetoresistance

The requirement for high‐density memory integration advances the development of newly structured spintronic devices, which have reduced stray fields and are insensitive to magnetic field perturbations. This could be visualized in magnetic tunnel junctions incorporating anti‐ferromagnetic instead of ferromagnetic electrodes. Here, room‐temperature anti‐ferromangnet (AFM)‐controlled tunneling anisotropic magnetoresistance in a novel perpendicular junction is reported, where the IrMn AFM stays immediately at both sides of AlO_x tunnel barrier as the functional layers. Bi‐stable resistance states governed by the relative arrangement of uncompensated anti‐ferromagnetic IrMn moments are obtained here, rather than the traditional spin‐valve signal observed in ferromagnet‐based tunnel junctions. The experimental observation of room‐temperature tunneling magnetoresistance controlled directly by AFM is practically significant and may pave the way for new‐generation memories based on AFM spintronics.     

Implementation of a plastically dissipated energy criterion for three dimensional modeling of fatigue crack growth

Fatigue crack growth is simulated using three dimensional elastic–plastic finite element analysis. The crack extension per load cycle, da/dN, as well as crack front profile changes (crack tunneling) under cyclic loading is not specified as an input but evaluated based on a condition that relates plastically dissipated energy to a critical value. Simulation of cyclic crack propagation in a middle-crack tension M(T) specimen using this implementation captures the well established, experimentally obtained crack growth rate reduction accompanying a single overload event. The analysis predicts that the single overload also affects the crack front profile, where a tunneling crack propagates with a flatter crack front in the overload affected zone.     

Electron‐Induced Dynamics of Heptathioether β‐Cyclodextrin Molecules

Variable‐temperature scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are performed on heptathioether β‐cyclodextrin (β‐CD) self‐assembled monolayers (SAMs) on Au. The β‐CD molecules exhibit very rich dynamical behavior, which is not apparent in ensemble‐averaged studies. The dynamics are reflected in the tunneling current–time traces, which are recorded with the STM feedback loop disabled. The dynamics are temperature independent, but increase with increasing tunneling current and sample bias, thus indicating that the conformational changes of the β‐CD molecules are induced by electrons that tunnel inelastically. Even for sample biases as low as 10 mV, well‐defined levels are observed in the tunneling current–time traces. These jumps are attributed to the excitations of the molecular vibration of the macrocyclic β‐CD molecule. The results are of great importance for a proper understanding of transport measurements in SAMs.