Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

The magnitude of the χ _xxxx ⁽³⁾ element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (～450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ _xxxx ⁽³⁾ with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

Production of perovskite-like La1−xCaxMnO3+δ ferromagnetic thin films by electrochemical reduction

Ferromagnetic and perovskite-like thin films (<1m) of La1–xCaxMnO3+ have been routinely prepared by heat treatment of an amorphous La–Ca–Mn precursor. The precursor was electrodeposited cathodically in the absence of oxygen and water onto polished silver substrates from a nonaqueous solution of the components' nitrates. Analysis by X-ray diffraction and SQUID magnetometry shows these materials exhibit the appropriate structural and magnetic phases indicative of colossal magnetoresistance.     

Electrochemical deposition of polypyrrole/graphene oxide composite on microelectrodes towards tuning the electrochemical properties of neural probes

By exploiting the electrostatic interaction between positively charged pyrrole cation radicals and negatively charged graphene oxide (GO) sheets, we prepared polypyrrole/graphene oxide (PPy/GO) composite films by a one-step electrochemical process. We studied the effects of the polymerization current density and the GO content in electrolyte on the formation of PPy/GO coatings onto platinum neural microelectrode sites. As compared with pure PPy film, PPy/GO coatings show a rougher surface feature with micrometer-scale bulges. The impedance of the PPy/GO coated Pt electrode is only about 10% of the bare Pt electrode at the biological relevant 1 kHz, while the charge capacity density is more than two orders of the magnitude of the bare Pt electrode. Moreover, the PPy/GO coated Pt electrodes show higher performance than the PPy coated electrodes for the application of neural probe.     

In2O3 + xBaO (x = 0.5-5 at.%) - A novel material for trace level detection of NOx in the ambient

Indium oxide (In₂O₃) doped with 0.5-5 at.% of Ba was examined for their response towards trace levels of NO_x in the ambient. Crystallographic phase studies, electrical conductivity and sensor studies for NO_x with cross interference for hydrogen, petroleum gas (PG) and ammonia were carried out. Bulk compositions with x ≤ 1 at.% of Ba exhibited high response towards NO_x with extremely low cross interference for hydrogen, PG and ammonia, offering high selectivity. Thin films of 0.5 at.% Ba doped In₂O₃ were deposited using pulsed laser deposition technique using an excimer laser (KrF) operating at a wavelength of (λ) 248 nm with a fluence of ∼3 J/cm² and pulsed at 10 Hz. Thin film sensors exhibited better response towards 3 ppm NO_x quite reliably and reproducibly and offer the potential to develop NO_x sensors (Threshold limit value of NO₂ and NO is 3 and 25 ppm, respectively).     

CVD淀积SiC薄膜SiH4,CH4的分解反应的计算机模拟研究

采用化学气相淀积淀积ＳｉＣ薄膜中ＳｉＨ４、ＣＨ４的分解产物种属进行数学建模,并结合相关热力学数据进行计算机模拟,得出ＳｉＨ４分解产物中以ＳｉＨ２为最多,ＣＨ４以ＣＨ２为最多,表明它们在淀积薄膜中是主要因素。     

Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP.     

Integrated plasma-aided nanofabrication facility: Operation, parameters, and assembly of quantum structures and functional nanomaterials

The development, operation, and applications of two configurations of an integrated plasma-aided nanofabrication facility (IPANF) comprising low-frequency inductively coupled plasma-assisted, low-pressure, multiple-target RF magnetron sputtering plasma source, are reported. The two configurations of the plasma source have different arrangements of the RF inductive coil: a conventional external flat spiral “pancake” coil and an in-house developed internal antenna comprising two orthogonal RF current sheets. The internal antenna configuration generates a “unidirectional” RF current that deeply penetrates into the plasma bulk and results in an excellent uniformity of the plasma over large areas and volumes. The IPANF has been employed for various applications, including low-temperature plasma-enhanced chemical vapor deposition of vertically aligned single-crystalline carbon nanotips, growth of ultra-high aspect ratio semiconductor nanowires, assembly of optoelectronically important Si, SiC, and Al_1-xIn_xN quantum dots, and plasma-based synthesis of bioactive hydroxyapatite for orthopedic implants.     

ICPECVD类金刚石膜沉积过程的发射光谱诊断研究

利用发射光谱(Optical emission spectroscopy,OES)对感应耦合等离子体增强化学气相沉积(Inductivelycoupled plasma enhance chemical vapor d印osition,ICPECVD)类金刚石(Diamondlike carbon,DLC)膜过程中的各种基团进行分析,并对不同条件下薄膜沉积速率以及薄膜显微硬度进行测试.分析结果发现,感应耦合等离子体源激发甲烷等离子体中存在比较突出的碳氢离子成分,从而促进形成高硬度的DLC膜.而且射频功率、沉积气压等沉积参数的变化对DLC薄膜沉积过程的中性基团、离子基团以及原子氢等成分都有着明显影响,从而最终影响薄膜沉积过程及薄膜性质.