Direct current bias applied to hot flame diamond deposition produces smooth low friction coatings

As-deposited diamond coatings generally have a high surface roughness which results in a high friction coefficient and extensive wear of the counter material in sliding contact. Therefore several methods for smoothening diamond coatings have been proposed, such as laser polishing, molten metal etching, thermochemical polishing and mechanical polishing. All these methods have some disadvantage e.g. long processing time or high processing temperature. Furthermore, they are all post-deposition treatments i.e. the manufacture of these coatings requires at least two processing steps, deposition and smoothening. With the present method which combines d.c. bias with hot flame diamond deposition, a smooth diamond surface is produced during the actual growth of the film. No post-deposition treatment is necessary. The surface roughness is not dependent on the coating thickness which means that thick coatings with smooth surface can be produced. In fact, the method has a smoothening effect, i.e. rough surfaces can be made smooth. The method is comparable to conventional hot flame deposition of diamond as to growth rate and cost of producing the coatings. The coatings have a nano-crystalline structure and a surface roughness of Ra = 25 nm, and result in a friction coefficient of 0.1 or less in dry sliding and about 0.05 in water-lubricated sliding against cemented carbide. Their wear resistance is virtually the same as that of conventional diamond films.     

聚乙烯吡咯烷酮对酸诱导液相沉积体系中GeO_2颗粒形貌的影响

在室温下,通过酸诱导液相沉积的方法,制备出了二氧化锗(GeO2)颗粒。制得的GeO2颗粒通过扫描电子显微镜(SEM),透射电子显微镜(TEM)和X射线衍射(XRD)进行表征。实验结果表明,向前驱液中加入酸,可以诱导锗酸根离子转化成立方体型的GeO2颗粒析出。而向反应液中再加入少量的聚乙烯吡咯烷酮(PVP)后,会析出纺锤体型的GeO2晶体颗粒。     

化学气相沉积ZrO_2涂层的表面微观形貌演变

采用ZrCl4-CO2-H2-Ar体系,在不同温度或氢气流量条件下采用常压化学气相沉积法(APCVD)通过不同沉积流程在C/C样品表面制备ZrO2涂层。用X射线衍射分析仪(XRD)和扫描电镜(SEM)分析涂层的物相组成和形貌特征。结果表明:随沉积温度升高,ZrO2涂层表面形貌由小颗粒堆积态向大尺寸多晶转变;氢气流量为0时,只在局部区域出现了少量ZrO2,当氢气流量为400mL/min时,ZrO2涂层晶粒尺寸较大且晶体学平面特征最明显;在氢气流量为800mL/min时沉积出现了副产物ZrC与C;在氢气流量为1600mL/min时,出现沉积副产物ZrC;连续沉积时,得到的ZrO2涂层为山峰状形貌。     

In-Situ Nitrogen Doping of the TiO2 Photocatalyst Deposited by PEALD for Visible Light Activity

In this paper, an N-doped titanium oxide （TiO2） photocatalyst is deposited by a plasma-enhanced atomic layer deposition （PEALD） system through the in-situ doping method. X-ray photoelectron spectroscopy （XPS） analysis indicates that substitutional nitrogen atoms （-395.9 eV） with 1 atom% are effectively doped into TiO2 films. UV-VIS spectrometry shows that the in-situ nitrogen doping method indeed enhances the visible-activity of TiO2 films in the 425-550 nm range, and the results of the performance tests of the N-doped TiO2 films also imply that the photocatalysis activity is improved by in-situ doping. The in-situ doping mechanism of the N-doped TiO2 film is suggested according to the XPS results and the typical atomic layer deposition process.     

Co2+离子对Zn电积阴极过程的影响

采用多种电化学研究方法探讨了在Zn电积过程中Co^2 对阴极极化过程的影响,并对其极化机理进行了研究．研究表明,当Co^2 离子≥6mg时,产生严重的“烧板”现象,降低了阴极Zn沉积反应的交换电流密度．对Zn沉积反应起极化作用,而且严重影响Zn的晶体形状．     

宝钢厂区大气环境质量现状与综合评价

通过对宝钢厂区大气环境主要污染物监测数据的整理,综合分析了宝钢厂区大气环境中二氧化硫、氮氧化物、可吸入颗粒物（PM10）和一氧化碳四种主要污染物的平均浓度随季节的变化趋势以及厂区内降尘的污染状况,并对2008年大气环境质量状况进行了综合评价。分析对比结果表明宝钢内大气主要污染因子是PM10和SO2,从监测资料看,2008年厂区降尘量比2007年有了明显下降,SO2和NOx的达标率均呈现上升趋势,可见宝钢在粉尘和脱硫脱氮治理方面取得了显著效果,污染程度明显下降。     

Simulation study on the influence of magnetic field in the near-anode region on anode power deposition of ATON-type Hall thruster

The highest deposition of power and temperature is always near the cusp of the ATON-type Hall thruster. This shows that when there are electrons gathering at the cusp, the distribution of heat load will be uniform, which will potentially damage the reliability. Therefore, we optimize the magnetic field near the anode. We changed the magnetic field characteristics in the near-anode region with an additional magnetic screen, and performed numerical simulation with particle-incell simulation. The simulation results show that the magnetic field of the thruster with the additional magnetic screen can alleviate the over-concentration of power deposition on the anode and reduce the power deposition in the anode by 20%, while ensuring that the overall magnetic field characteristics do not change significantly.     

Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

Recently, transparent conducting oxide thin films have attracted attention for the application to transparent conducting electrodes. In this work, we evaluated the uniformity of electrical, optical and structural properties for gallium doped zinc oxide thin films prepared on the 10 × 10 cm² silica glass substrate by pulsed laser deposition. The resistivity, carrier concentration, mobility, bonding state and atomic composition of the film were uniform along in-plane and depth direction over the 10 × 10 cm² area of the substrate. The film showed the average transmittance of 81-87%, resistivity of 1.4 × 10^− 3 Ω cm, carrier concentration of 9.7 × 10²⁰/cm³ and mobility of 5 cm²/Vs in spite of the amorphous X-ray diffraction pattern. The gradual thickness distribution was found, however, the potential for large-area and low temperature deposition of transparent conducting oxide thin film using pulsed laser deposition method was confirmed.     

Rapid growth of angle-confined large-domain graphene bicrystals

In the chemical vapor deposition growth of large-area graphene polycrystalline thin films,the coalescence of randomly oriented graphene domains results in a high density of uncertain grain boundaries (GBs).The structures and properties of various GBs are highly dependent on the misorientation angles between the graphene domains,which can significantly affect the performance of the graphene films and impede their industrial applications.Graphene bicrystals with a specific type of GB can be synthesized via the controllable growth of graphene domains with a predefined lattice orientation.Although the bicrystal has been widely investigated for traditional bulk materials,no successful synthesis strategy has been presented for growing two-dimensional graphene bicrystals.In this study, we demonstrate a simple approach for growing well-aligned large-domain graphene bicrystals with a confined tilt angle of 30° on a facilely recrystallized single-crystal Cu (100) substrate.Control of the density of the GBs with a misorientation angle of 30° was realized via the controllable rapid growth of subcentimeter graphene domains with the assistance of a cooperative catalytic surface-passivation treatment.The large-area production of graphene bicrystals consisting of the sole specific GBs with a tunable density provides a new material platform for fundamental studies and practical applications.     

新颖的超高真空CVD外延设备与低温低压硅外延研究

为实现低温低压外延新工艺，建立了一台具有多项原位监控功能的新颖的超高真空CVD（chemicalvapordeposition）外延设备，并用此设备，（100）和（111）硅片分别在550℃和650℃下由硅烷热解法成功地生长了硅外延层。高分辨率的横断面透射电镜（XTEM）照片表明，低温硅外延层中存在一些缺陷，这些缺陷都由衬底表面引起的，然后扩展进入外延层。此外，衬底｛100｝Si和｛111｝Si因晶向不同，不仅获得外延层所需的最低温度不同，而且外延层中的缺陷特征差异也很大。