Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

LaNiO3薄膜热稳定性的研究

LaNiO3导电金属氧化物薄膜在现代应用科学研究中作为电极和过渡阻挡层倍受青睐，它具有很好的导电特性和稳定性。该文采用射频溅射法制备了具有(100)择优取向的赝立方结构LaNiO3-x薄膜，并进行了原位热处理。实验结果表明，在265℃的处理条件下，LaNiO3薄膜表现出不稳定性，晶格中的氧在2h内失去了2.7％。氧的损失对品格结构没有明显影响，但薄膜的导电性能明显下降，折射率和消光系数也具有相同幅度的下降。对薄膜的应用具有一定的影响。该文从LaNiO3薄膜的导电机理方面对实验现象给出了分析和解释。     

Alleviation Effect of Lanthanum on Cadmium Stress in Seedling Hydroponic Culture of Kidney Bean and Corn

Since1970s,rare earths(RE)have been exten-sively used as micro-fertilizers for crops in China.Ithas already been proved that REcani mprove the pro-duction and quality of crops.However,there havebeen a fewinvestigations about using RE as regulatorin pollution ecology.For example,An et al[1]studiedthe effects of O3on wheat growth and the protectiveeffect of RE.Yan and Zhou et al[2,3]discussed theprotective effect of RE on plants under acid rainstress.Jia et al[4]and Hu et al[5]reported th…     

Complete oxidation of methane at low temperature over Pt and Pd catalysts for the abatement of lean-burn natural gas fuelled vehicles emissions: influence of water and sulphur containing compounds

The catalytic activity of fresh Pd and Pt catalysts supported on γ-alumina in the complete oxidation of CH₄ traces under lean-burn conditions was studied in the presence or the absence of water or H₂S. Steam-aged catalysts were also studied in order to simulate long-term ageing in real lean-burn natural gas fuelled vehicles (NGVs) exhaust conditions. Without water or H₂S added to the feed, Pd catalysts exhibit a superior catalytic activity in methane oxidation compared to Pt ones, whatever the catalysts were fresh or aged. The addition of 10 vol.% water vapour to the feed strongly affects the activity of the fresh Pd catalyst, thus being only slightly more efficient than the fresh Pt one. H₂S has a strong poisoning effect on the catalytic activity of Pd catalysts, while Pt catalysts are more resistant. The fresh H₂S-poisoned Pd/Al₂O₃ catalyst was studied by TPD in O₂/He. Poisoning species decompose above 873 K as SO₂ and O₂ in relative concentrations consistent with the decomposition of surface sulphate species. However, a treatment in O₂/He at temperatures as high as 923 K does not allow the complete regeneration of the catalytic activity of H₂S-poisoned Pd/Al₂O₃. A mechanism involving the poisoning of PdO by sulphate species is proposed. Different diffusion processes by which these sulphate species can migrate back and forth between PdO and the support, depending on the experimental conditions, are suggested.     

Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs

The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D’s standard user interface.     

Observation of atomic steps on CaCO3 crystal surface

By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed.     

T_C≥400°C高温PTC陶瓷的研制

利用国产原料，采用传统的陶瓷材料制备工艺，研制了居里温度ＴＣ≥４００°Ｃ的高温ＰＴＣ陶瓷，制成了居里温度ＴＣ＝４１２°Ｃ，电阻Ｒ≤１０３Ω，ｌｇ（Ｒｍａｘ／Ｒｍｉｎ）＝４的高性能ＰＴＣ热敏陶瓷材料