LCoS微显示驱动芯片表面形貌研究与改进

介绍了LCoS技术的特点与发展现状,LCoS性能的优劣与硅基片平整度有直接关系,着重进行了LCoS微显示驱动技术表面形貌的研究与改进.通过严格控制工艺步骤,降低台阶高度;合理设计版图布局,使台阶叠加在隔离像素区域的沟槽中,这样既能实现像素电极区域的局部平坦化,又因为沟槽不作为显示区域,对整体显示效果影响较小.     

高阻燃通信线缆的应用状况分析

介绍通信线缆的应用现状,提出应重视通信线缆的阻燃性能,并通过对CM、CMR、CMP和LSOH线缆进行燃烧实验对比其阻燃性能,实验证明CMP线缆具有在最短时间内自我熄灭且不续燃的功能。     

Experimental investigation of process parameters for roll-type linear chemical mechanical polishing (Roll-CMP) system

The fabrication processes for electronic components are now demanding a higher degree of planarity for integration and multistacking, with chemical mechanical polishing (CMP) processes replacing conventional etching or mechanical polishing owing to their ability to attain global planarization. As CMP has been applied to more and more fields, new types of CMP machines have been developed. This study introduces a novel roll-type linear CMP (Roll-CMP) process that uses a line-contact material removal mechanism to for the polish flexible substrates, and examines the effect of the process parameters on the material removal rate (MRR) and its nonuniformity (NU). The parameters affecting the Roll-CMP process include down force, roll speed, table feed rate, slurry flow rate, slurry temperature, and the table oscillation length. Increasing the down force, roll speed, slurry flow rate, and slurry temperature resulted in a high average MRR (MRR_avg). Further, the MRR_avg was found to decrease with an increase in the oscillation length because of the effect of the polishing area. A large down force, high roll speed, high table feed rate, and high slurry flow rate were effective for reducing the NU. These results will be helpful for understanding the newly developed Roll-CMP process.     

The Antiwear Action of Zinc Di-n-Butyl Phosphate

The dynamics of MoS₂ particles in a mineral oil dispersion are studied in the same manner as reported in Part I for graphite dispersions. A Hertzian contact consisting of a steel ball in contact with a glass disk is lubricated with MoS² dispersions and observed by optical microscopy at various. slide/roll conditions. In general, the behavior of MoS₂ and graphite are similar. That is, the solids lend to enter the contact and form a film on the contacting surfaces whenever a rolling component of motion is used, but solid particles seldom enter the contact during pure sliding. MoS₂ has more pronounced plastic flow behavior than graphite. However, the polished steel ball is more readily scratched by MoS₂ than by graphite. Under the conditions of these studies, lower friction and wear are observed with pure oil rather than with the dispersions. However, under other conditions (such as different contact geometry or rougher surfaces), the solid-lubricant dispersions might be beneficial.     

红麻全秆碱性亚钠化机浆工艺及磨木木素热学性质的研究

在已优选出来的最佳条件下，进行不同工艺路线下制取红麻全秆ＡＳＣＭＰ的研究。结果表明料片水洗再汽蒸，然后预处理，再经常压二道磨浆，所得浆料在实验室抄造出的新闻纸，各项指标均达到或超过国家Ａ级标准。通过ＰＦＩ磨研究表明红麻ＡＳＣＭＰ的适宜磨浆程度为磨至５５～６０°ＳＲ。采用ＳＥＭ观察到了浆料中潜态的存在。消潜可在６０℃下进行。用差热分析仪测定了磨木本素的玻璃化转变温度（Ｔｇ），由于木素被磺化，Ｔｇ下降了３．６７℃。     

荻CMP高浓磨浆的初步研究

经过化学处理的荻,在φ300mmKRK盘磨机中使用18034N齿盘进行高浓磨浆。浆的筛分析结果表明,一段磨浆主要作用是离解纤维,切断作用很小。在光显微镜下的观测证明,高浓(25％)磨浆时纤维的切断作用显著减少,而且润胀良好,保水值上升。这种经碱性H_2O_2温和处理的荻CMP浆在TEM电子显微镜下观测表明,在ML—P层间或在P—S_1层间未发生剥离现象,而是P和S_1层一起自纤维表面上部分脱落,二段磨浆比一段磨浆暴露出来的S_2层继续增多,提供了良好的纤维结合面积,有利于提高浆张的物理性能。在实验室试验条件下的初步研究证明,这种荻CMP应用在对白度要求不高的产品时,具有代替木浆使用或节约木材造纸潜力的可能性。     

微机在造纸网生产中的监控系统

本文介绍利用微型单片机控制,完成造纸网生产过程中对加热温度、张力、电压、长度四个参量的自动监测、控制、记录的系统。     

ULSI多层互连中的化学机械抛光工艺

介绍了化学机械抛光(CMP)技术在大规模集成电路多层互连工艺[1]中的重要作用,对CMP过程和CMP的影响因素进行简单分析。总结出CMP技术在多层互联平坦化中的优势,介绍目前常用互连材料中SiO2介质及其金属材料钨和铜的化学机械抛光常用分析机理,并简单介绍了各种互联材料常用的抛光液及抛光液的组分,对抛光液作了简单的对比。针对传统CMP过程存在的问题,分析了皮带式和固定磨料的CMP技术。     

炼钢自动化系统的研究与实现

介绍了自行研制的转炉炼钢自动化系统的结构、功能，并讨论了工业现场经常出现的调试难点及相应的解决方法。应用表明，该系统实现了炼钢生产的全面监视、控制和管理，提高了生产效率、产品质量及生产安全系数，有着极高的推广应用价值。     

Influence of a Retaining Ring on Strain and Stress in the Chemical Mechanical Polishing Process

In this article, a two-dimensional axisymmetric quasi-static finite element wafer scale model for chemical mechanical polishing (CMP) process involved in the wafer carrier, the carrier film, the wafer, the pad, and the retaining ring was developed to investigate the effect of a retaining ring surrounding the wafer carrier to the strain, stress, and nonuniformity of the wafer surface for the purpose of improving edge exclusion of wafer and preventing the wafer sliding from the carrier while grinding. Considering the same revolutions of the wafer and the pad and the axisymmetric distributed force forms of the wafer carrier and the retaining ring, and applying the principle of minimum potential energy, a two-dimensional axisymmetric quasi-static finite element model for CMP process was established. Following the developed model, the effects of the retaining ring on the strain components, the stress components, the von Mises stress, and the wafer's nonuniformity were investigated. The findings indicated that a retaining ring installed in the conventional CMP mechanism could reduce the variation of the von Mises stress distribution to reach the lower wafer's nonuniformity effectively, improve the over-grinding phenomenon and prevent the wafer sliding from the carrier while grinding.