时频域零炮检距地震道拟合技术在高分辨率资料处理中的应用

在地震资料处理中，水平叠加的作用是压制随机噪声和消除多次波，但伴随的缺点是降低了地震资料分辨率，且模糊了振幅特征。为了提高地震资料分辨率和振幅保真，许多学者提出了多种拟合方法代替水平叠加。然而，这些拟合方法也有其自身的弱点，如在提高信噪比方面的能力较弱等。本文从应用角度出发，讨论了时频域零炮检距拟合方法的特点及在海上高分辨率地震资料处理中应用叠前消除各种线性干扰和多次波的必要性。实际资料处理结果表明，只要在叠前做好去噪工作，应用时频域零炮检距地震道拟合方法代替水平叠加有利于改善地震资料的分辨率和振幅保真。     

Analysis of flow between a wafer and pad during CMP processes

In this paper, we summarize the development of a numerical model for the chemical mechanical planarization (CMP) process and experimentally investigate the effects of pad conditioning on slurry transport and mixing. A simplified two-dimensional numerical model of slurry flow beneath a stationary wafer was developed to determine the pressure and shear stress beneath a wafer. The initial results indicate that in the hydrodynamic regime a positive upward pressure is exerted on the wafer. We also examined three cases to study pad effects on slurry transport; polishing with an Embossed Politex pad, an unconditioned IC1000 pad, and a conditioned IC1000 pad. Cab-O-Sperse SC1 slurry was used in a 1:1.5 dilution with water. Mixing data show that conditioning has a negligible effect on the rate of slurry entrainment and mixing; however, conditioning has a large effect on the thickness of the slurry layer between the wafer and pad. Conditioning was found to increase the slurry thickness by a factor of two. In addition the gradients in slurry age beneath the wafer were compared among the three cases. The IC1000 pads supported a gradient in the inner third of the wafer only, while the Embossed Politex pad showed a linear gradient across the wafer implying it retains pockets of unmixed slurry in the embossed topography.     

化学机械抛光后板刷擦洗清洗(英文)

板刷擦洗是一种在化学机械抛光后清洗中常用的方法。它可以非常有效地把研磨剂颗粒从已抛光的晶圆表面去除掉。在氧化硅化学机械抛光的清洗工艺中,去离子水(或者稀释的氢氧化氨)是刷洗过程中常用的化学品起到的作用及刷洗的机械力对去除氧化硅研磨剂颗粒时所起的作用。     

800 V SOI介质隔离技术研究

高低压隔离是SOI(Silicon-on-Insulator)高压功率集成电路的关键问题之一。文章对SOI介质隔离问题进行了深入研究。通过理论分析和数值仿真,探讨其耐压机理,并对结构参数进行了优化;设计了包含低淀氮化硅、化学机械抛光(CMP)等关键步骤的新的SOI介质隔离工艺流程。实验结果表明,在膜厚为20μm的SOI上,可以实现击穿电压800 V以上的介质隔离结构。     

用于先进的双嵌入和栓工艺的低缺陷钨CMP高性价比浆料(英文)

介绍了用于钨双嵌入和钨栓CMP工艺的新型CMP3200TM氧化铝浆料,测试证明,这种浆料在110nm技术节点的钨CMP工艺应用中取得了理想的效果。通过对氧化铝粒子制造工艺的有效控制,获得了可满足110nm技术节点双嵌入和栓层钨CMP工艺要求的低缺陷率,高性价比的氧化铝蛐硝酸铁浆料。从而在价格竞争激烈的半导体制造领域,特别是代工市场引起了业界越来越多的关注。     

Experimental investigation on mechanisms of silicon chemical mechanical polishing

In this research, we conducted a series of experiments to investigate the mechanisms of chemical mechanical polishing (CMP) of silicon. Experimental approaches include tribological tests of frictional and lubricating behavior, chemical analysis, and surface characterization. Specifically, the effects of pH in slurry, surface roughness of wafers, and nano-particle size on removal rate were studied. A transmission electron microscope (TEM), a scanning electron microscope (SEM), and x-ray characterization tools were used to study the change of surface structure and chemistry. Experimental results indicate that the removal rate and planarization are dominated by the surface chemistry.     

单头单面旋转式化学机械抛光机的运动机理研究

以单头单面旋转式化学机械抛光机为例建立了抛光头的运动模型,并利用Matlab软件模拟出了抛光头的运动轨迹,分析并讨论了抛光盘和抛光头两者之间不同的转速比、旋转方向、偏心距以及抛光点的初始位置等参数对抛光轨迹和抛光质量的影响,为CMP机床的结构和运动设计提供理论依据。     

Retreatment of silicon slurry by membrane processes

The purpose of the present study is to develop a process to regenerate the polish liquid used in Chemical and Mechanical Polishing (CMP), called “slurry”, and more specifically Silicon CMP slurry. Physico-chemical analyses show a considerable dilution of slurry through washing waters used in polishing. Thus, this effluent has been characterised for a better identification of the deviations from the slurry of reference (Point Of Use). Hence, the principle is to regenerate this effluent by membrane processes. The ultrafiltration results obtained at laboratory scale have led to the development of an industrial prototype. An optimal utilisation of this treatment allows completing a two-step process: the reconcentration by ultrafiltration and a chemical adjustment by addition of concentrated slurry. A stable behaviour of the slurry at the different steps of the process has been observed. Polishing results are similar with retreated and POU slurries. Furthermore, the functioning at industrial scale permits to maintain the performances obtained on the laboratory pilot.     

部分响应CPM信号解调器的FPGA设计

设计并实现了一种基于FPGA的二进制连续相位调制（CMP）解调器。该解调器针对二进制部分响应调制方式,采用Viterbi译码方法进行解码。文中针对路径度量值随着译码序列增长可能发生溢出的现象,提出了一种新的防止路径度量值溢出方法。最后使用VHDL硬件描述语言将该解调器的设计进行实现,运用Modelsim仿真软件进行了功能仿真,并将仿真结果与MATLAB数据比较分析。该解调器的FPGA设计能够得到正确的解码结果,最终证明了该方法的有效性。     

300mm铜膜低压低磨料CMP表面粗糙度的研究

随着集成电路特征尺寸的减小、低k介质的引入及晶圆尺寸的增加,如何保证在低压无磨料条件下完成大尺寸铜互连线平坦化已经成为集成电路制造工艺发展的关键。采用法国Alpsitec公司的E460E抛光机在低压低磨料的条件下,研究了12英寸(1英寸=25.4 mm)无图形(blanket)铜膜CMP工艺和抛光液配比对抛光表面质量的影响。实验结果表明,在压力为0.65 psi(1 psi=6.89×103 Pa),抛光液主要成分为体积分数分别为5%的螯合剂、2%的氧化剂和3%的表面活性剂。抛光后表面无划伤,表面非均匀性为0.085,抛光速率为400 nm.min-1,表面粗糙度为0.223 nm,各参数均满足工业化生产的需要。