井间地震反射波叠加成像的DLCDP法

为了对有倾角地层的井间反射波进行叠加成像，同时减少对寝模型的依赖，提出了一种新方法（ＤＬＣＤＰ）。它首先针对倾斜界面进行抽道集，形成井间的超道集，然后利用平均振幅能量准则进行深度、倾角和速度三重扫描，获得井间反射波叠加成像。本文用射线追踪法和声波方程有限差分法制作了合成的井间地震记录，通过模型试算，证实了这种方法的可行性。     

Mechanism of defect formation in low-dose oxygen implanted silicon-on-insulator material

The defects and microstructure of low-dose (<0.7 × 10¹⁸ cm⁻²), oxygen-implanted silicon-on-insulator (SIMOX) material were investigated as a function of implant dose and annealing temperature by plan-view and cross-sectional transmission electron microscopy. The threading-dislocations in low-dose (0.2∼0.3×10¹⁸ cm⁻²), annealed SIMOX originate from unfaulting of long (∼10 μm), shallow (0.3 μm), extrinsic stacking faults generated during the ramping stage of annealing. As dose increases, the defect density is reduced and the structure of the buried oxide layer evolves dramatically. It was found that there is a dose window which gives a lower defect density and a continuous buried oxide with a reduced density of Si islands in the buried oxide.     

高线减定径区带肋钢筋堆钢问题的解决

通过对高速线材生产线在生产带肋钢筋盘条时减定径区堆钢原因的分析，对成品孔型和进、出口导卫进行丁改进，从而使因堆钢而造成的平均事故时间由原来的40min／班减少至5min／班。     

Anisotropic behaviour of semiconducting tin monosulphoselenide single crystals

Single crystals of ternary mixed compounds of group IV-VI in the form of a series, SnS_xSe_1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), have been grown using direct vapour transport technique. The grown crystals were characterized by the X-ray diffraction analysis for their structural parameter determination. All the grown crystals were found to be orthorhombic. The microstructure analysis of the grown crystals reveals their layered type growth mechanism. From the Hall effect measurements Hall mobility, Hall coefficient and carrier concentration were calculated with all crystals showingp-type nature. The d.c. electrical resistivity measurements perpendicular toc-axis (i.e. along the basal plane) in the temperature range 303–453 K were carried out for grown crystals using four-probe method. The d.c. electrical resistivity measurements parallel to c-axis (i.e. perpendicular to basal plane) in the temperature range 303–453 K were carried out for the same crystals. The electrical resistivity measurements showed an anisotropic behaviour of electrical resistivity for the grown crystals. The anisotropic behaviour and the effect of change in stoichiometric proportion of S and Se content on the electrical properties of single crystals of the series, SnS_xSe_1-x (wherex = 0, 0.25, 0.50, 0.75 and 1), is presented systematically.     

Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs

ZnMgSSe and ZnSSe layers grown on GaAs substrates with GaAs buffer layers by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). The depth level at which paired triangular stacking faults are nucleated in the ZnMgSSe/GaAs heterostructure has been investigated by using the plan-view TEM technique. It has been found that in the ZnMgSSe/GaAs heterostructure the nucleation of the paired stacking faults occurs within a range of depth which starts at the II-VI/GaAs interface and ends at a level that is above the interface by about 120 nm. The dominant type of defects in ZnSSe layers, which have the single triangular shape, has been identified to be microtwins by high resolution TEM.     

垦东地区表层地震资料分析及采集方法研究

通过野外试验和调查 ,查明了垦东地区的表层是一种低速泥层与高速沙板层的互层结构。这种地质结构导致采集的地震资料包含大量的多次波。为了消除多次波的影响 ,从斯奈尔定律出发推导出多次折射盲区的斜率表达式、多次波的表达式及其叠加特性公式 ,并对薄互层地质结构产生的多次反射波和多次折射波进行了描述。结合本区的试验资料 ,探讨了该区地震资料采集方法 ,形成一套可避免多次波影响 ,且具有可操作性和适应性的野外工作方法 ,对生产设计和施工作业具有很好的指导意义     

入库钢板对齐技术的开发

针对影响入库钢板对齐度的几个难题，从理论和实践进行了分析，开发了入库钢板对齐新技术，从而解决了这一长期影响产品垛放外观形象的难题．     

P-SV转换波积分DMO方法研究及应用

本文从纵波ＤＭＯ原理出发，提出一种Ｐ－ＳＶ转换波积分ＤＭＯ方法。该方法依据文中导出的Ｆ－Ｋ域转换波ＤＭＯ算法的积分形式进行振幅、相位校正，同常规转换波水平叠加相比能地改善叠加效果，更好地解决ＣＭＰ道集内共转换点发散问题。理论模型和实际资料处理结果表明，该方法是一种较理想，实用的转换波ＤＭＯ处理方法。     

改进的正演模拟定位原理

本文在作者以前提出的模拟定位原理及其相应算法的基础上，提出了改进的原理－正演模拟定位原理２。改进后的原理是通过认识共炮记录正演模拟的实质，抛开偏移成像的因素，就正演而作正演。因此，在同样用单程声波方程获得完全一样的共炮点记录的正演记录的情况下，使用基于定位原理２的计算公式，可成百倍地提高运算速度。     

高密度三维封装技术

简要介绍为满足日益增长的低功耗、轻重量、小体积系统的应用需求而涌现出的多种裸芯片封装与多芯片叠层封装技术。详细讨论三维封装的垂直互连工艺。主要分析三维封装技术的硅效率、复杂程度、热处理、互连密度、系统功率与速度等问题。