Optical, electrical and structural characteristics of Al:ZnO thin films with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum

Transparent and conductive Al-doped ZnO (AZO) films have been grown with various thicknesses between 0.3 and 1.1 μm by magnetron sputtering at room temperature onto soda lime glass substrates. After deposition, the samples have been annealed at temperatures ranging from 150 to 450 °C in air or vacuum. The optical, electrical, and structural characteristics of the AZO coatings have been analyzed as a function of the film thickness and the annealing parameters by spectrophotometry, Hall effect measurements, and X-ray diffraction. As-grown layers are found polycrystalline, with hexagonal structure that shows some elongation of the unit cells along the c-axis, having visible transmittance ∼85-90% and resistivity ∼1.6-2.0 mΩ cm, both parameters slightly decreasing when the film thickness increases. Heating in air or vacuum produces further elongation of the crystalline lattice together with some increase of the visible transmittance and a decrease of the electrical resistance that depends on the heating temperature and atmosphere. The best characteristics have been obtained after treatment in vacuum at 350 °C, where the highest carrier concentrations are achieved, giving visible transmittance ∼90-95% and resistivity ∼0.8-0.9 mΩ cm for the AZO layers with various thicknesses. Some relationships between the analyzed properties have been established, showing the dependence of the lattice distortion, the band gap energy and the mobility on the carrier concentration.     

Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of β-FeSi2 by magnetron sputtering

Boron-doped or phosphorus-doped β-FeSi₂ thin films have been prepared on silicon substrate by magnetron sputtering. Effects of Si/Fe ratio on the boron and phosphorus doping efficiencies have been studied from the resistivities of doped β-FeSi₂ thin films and current-voltage characteristics of doped β-FeSi₂/Si heterojunctions. The experimental results reveal that the carrier concentration and doping efficiency of boron or phosphorus dopants at the Fe-rich side are higher than that at the Si-rich side. The effect of Si/Fe ratio can be deduced from the comparison of the formation energies under two extreme conditions. At the Fe-rich limit condition, the formation energy of boron or phosphorous doping is lower than that at the Si-rich condition. Therefore, the activation of impurities is more effective at the Fe-rich side. These results demonstrate that the boron-doped and phosphorous-doped β-FeSi₂ thin films should be kept at the Fe-rich side to avoid the unexpected doping sites and low doping efficiency.     

Variation in structural and dielectric properties of co-precipitated nanoparticles strontium ferrites due to value of pH

Nanoparticles of strontium ferrites with nominal composition SrFe₁₂O₁₉ were prepared by co-precipitation method, by decreasing pH from 13 to 8 with a regular step of 1. The secondary phase of α-Fe₂O₃ was increased with the decrease in pH. The crystallite size estimated from X-rays diffraction data was in the range 52-70 nm, which is much smaller than that already reported. Most of the particles formed had hexagonal structure, as observed by the scanning electron microscopy. Particle size and dielectric loss were increased where as dc electrical resistivity and dielectric constant were decreased with decrease in pH. The results show that the material synthesized with higher pH is phase pure and is potentially more suitable for high frequency applications.     

Silver coated vapor-grown-carbon nanofibers for effective reinforcement of polypropylene-polyaniline

This work utilizes a modification of our process of polymer entrapment in silver to deposit silver crystals on carbon nanofibers at different relative concentrations. The experimental procedure and the characteristics of silver coated nanofibers are presented in detail. The resulting nanofibers are then melt-mixed with a polypropylene-polyaniline blend to form a uniform dispersion that is finally extruded to produce continuous monofilament composites of high axial orientation. The reinforcement effect of the silver coated nanofibers, manifested in the mechanical properties of the monofilament composites, is 3-5 folds higher than that of the pristine nanofibers due to the improved stress transfer mechanism of the former. Additional attractive properties of the new system may result from its anisotropic crystalline structure, enhanced thermal stability, potential electrical conductivity and antibacterial behavior.     

Transport Properties of K_xV_2O_5·nH_2O Nanocrystalline Films

Five different compositions of K x V 2 O 5 ·nH 2 O(where x=0.00,0.0017,0.0049,0.0064 and 0.0091 mol) were prepared by the sol-gel process.Electrical conductivity and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K.The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content.The conductivity of the present system was primarily determined by hopping carrier mobility.The carrier density was evaluated as well.The conduction was confirmed to obey non-adiabatic small polaron hopping.The thermoelectric power or Seebeck effect,increased with increasing K ions content.The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.     

Kinetics of isothermal decomposition in polycrystalline β CuAlBe alloys

The kinetics of the microstructural evolution of the metastable β phase during isothermal aging in a Cu–22.60Al–3.26Be (at%) polycrystalline shape memory alloy has been studied by electrical resistivity measurements and microscopical examinations. With an isothermal treatment at around 820 K, the alloy rapidly decomposes into γ₂ phase with dendritic morphology, while between 670 K and 760 K the formation of α′ phase followed by the eutectoid decomposition is observed. A TTT diagram was estimated and the stability boundaries of the β phase in the studied alloy were compared with those of other Cu-based shape memory alloys.     

DRF-J45型镓单晶炉的开发与设计

当前镓提纯方法大部分采用电解法,电解法生产出的镓晶体纯度不高,常常形成个别杂质元素超标。为了提高其晶体纯度,需采用晶体提拉法来进一步弥补并提升镓晶体提纯工艺方法。从分析镓单晶炉生长的工艺特点出发,简要介绍镓单晶生长设备的设计思想以及新近开发设计的新型镓单晶炉的机械结构及电气控制系统。     

消除产品良率隐藏的杀手--电子束检查是铜逻辑和晶圆代工厂的最佳方法

监控和消除隐藏的电路缺陷已成为130nm和130nm以下器件的关键。这使得电子束检查正在广泛应用于开发、试生产和量产的监控过程。我们将描述当前铜逻辑和晶圆代工厂电子束检查技术的执行情况,其中包括详细的案例研究,它说明了从开发到量产过程中应用电子束检查技术的好处。我们也描述了过去克服通用工具障碍的方法。然后,分别介绍了利用电子束检查技术的新进展,以及为假设的20000WSPMφ300mm工厂模拟的最理想执行情况的最佳实例。     

Structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diodes prepared by liquid phase epitaxy

In this paper, we have investigated the structural, electrical and magnetic characterizations of Ni/Cu/p-Si Schottky diode prepared by liquid phase epitaxy (LPE). Current density-voltage (J-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) measurements were performed to determine the conduction mechanisms as well as extracting the important diode parameters. Rectifying properties were obtained, which definitely of the Schottky diode type. At low voltages, (0 < V ? 0.4 V), current density in the forward direction was found to obey the diode equation, while for higher voltages, (0.5 < V ? 1.5 V), conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. Diode parameters such as, the built-in potential, V_b, the carrier concentration, N, the width of the depletion layer, W, of the Ni/Cu/p-Si Schottky diode were obtained from the C-V measurements at high frequency (1 MHz). The capacitance-frequency measurements showed that the values of capacitance were highly frequency dependent at low frequency region but independent at high frequencies. The Ni/Cu/p-Si Schottky diode showed magnetic properties due to the effect of Ni in the heterostructure.     

Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications

CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films.