Phase composition and properties of solid solutions of GdFeO3–GdInO3 bulks

Solid solutions of the GdFeO₃–GdInO₃ system were prepared at 1550 °C by ceramic powder processing. The formulated composition was Gd(Fe_1−xIn_x)O₃ (GFI) with the indium contents at x = 0, 0.25, 0.5, 0.75, and 1.0. A stable phase of Gd(Fe_1/3In_2/3)O₃ in our system was identified by X-ray diffraction and phase composition analysis. Multi-phase morphologies were observed for GFI bulks with x = 0.5 and 0.75. Dielectric and electrical properties of the GFI bulks were investigated. The addition of 25% In³⁺ in GdFeO₃ had an obvious enhancement in polarization and led to an elevated resonance frequency. Dielectric properties of GFI bulks except GdInO₃ were strongly dependent upon the test frequency, which corresponded to the response of polarization mechanism. GdInO₃ displayed as a stable dielectric, which was frequency- and temperature-insensitive. GdInO₃ was thermally activated and became leaky until above 600 °C.     

Material removal and surface damage in EDM of Ti3SiC2 ceramic

Material removal and surface damage of Ti₃SiC₂ ceramic during electrical discharge machining (EDM) were investigated. Melting and decomposition were found to be the main material removal mechanisms during the machining process. Material removal rate was enhanced acceleratively with increasing discharge current, i_e, working voltage, u_i, but increased deceleratively with pulse duration, t_e. Microcracks in the surface and loose grains in the subsurface resulted from thermal shock were confirmed, and the surface damage in Ti₃SiC₂ ceramic led to a degradation of both strength and reliability.     

国内外厚煤层大功率电牵引采煤机机电一体化新技术

介绍国内外大功率厚煤层电牵引采煤机的机电一体化新技术,包括总体技术、交流变频电牵引技术、工况检测、故障诊断技术、自动调高技术、远程通讯和集中控制技术。     

Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition

Schottky diodes were built on different polycrystalline diamond films grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition and their electrical properties were studied. The barrier height increased with the diamond film quality and the corresponding ideality factor decreased. Even though the lower-quality HFCVD film displayed poor rectifying properties, it was found to be much less sensitive to variations in the operating conditions (air vs. vacuum). The activation energies of the films depend on morphological parameters, as preferable grain size or orientation. The bulk conduction also depends on the quality of the deposited films, changing from ohmic to trap-free or shallow trap SCLC and SCLC with an exponential distribution of traps. The hypothesis of using the electrical measurements as an indicator for film quality has been discussed.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.     

Study of the effective parameters on mechanical and electrical properties of carbon black filled PP/PA6 microfibrillar composites

In this study the electrical and mechanical properties of microfibrillar polypropylene (PP)/polyamide6 (PA6) blend filled with super conductive carbon black (CB) have been investigated. In situ microfibrillar PP/PA6 composites filled with CB are produced using a single screw extruder equipped with a spinneret. Glycidyl methacrylate (GMA) grafted polypropylene (PP-g-GMA) is used as the compatibilizer. To investigate the effects of extensional flow on the microstructure, electrical and mechanical properties, three adaptors with various convergence angles were designed, prepared and applied between the extruder and the spinneret. To optimize the effects of processing and material parameters on the electrical and mechanical properties, the Taguchi method of experimental design is used. Material and processing factors which are studied include: concentration of PA6, compatibilizer level, CB concentration, drawing speed of melt spinning line, adaptor angle, order of mixing and temperature profile along the extruder. The results show an increase in DC conductivity of up to 10¹¹ times in comparison with pure PA6, by increasing the concentration of CB, drawing speed, adaptor angle and optimizing other parameters. By optimizing processing and material factors studied here, strength of microfibrillar structured composites is increased of up to 80% in comparison to pure PP.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

The method of testing of XLPE cable insulation resistance to partial discharges and electrical treeing

The paper gives a method of model XLPE medium voltage cable insulation testing for partial discharges and electrical treeing with a point to plane test geometry. Based on this method, a comparative estimate of insulation resistance to treeing and partial discharges have been made. XLPE crosslinked by different methods (steam medium and hot nitrogen medium) and with varying contents of inorganic filler kaolin were tested. The characteristics of partial discharges were measured by means of a pulse height analyser characterized with a microscope. The data have been analysed statistically.     

Radiation tolerance of type IIa synthetic diamond detector for 14 MeV neutrons

Radiation tolerance of a type IIa synthetic diamond detector was examined from irradiation of mono-energetic 14 MeV neutrons. Measurements of I–V (current–voltage) characteristics and energy spectrum for 5.486 MeV alpha particles were performed after neutron irradiation. In the I–V characteristics measurement, enhancement of rectification was observed after neutron irradiation of up to 2.0 × 10¹² n/cm². Concurrently with the enhancement of rectification, significant decrease in signal amplitude was observed in energy spectrum measurement for alpha particles. It is considered that these changes were due to increase in the concentration of defects acting as shallow energy levels in the forbidden band. For neutron irradiation of higher than 1.6 × 10¹³ n/cm², weakening of the rectification characteristics and recovery of the signal amplitude were observed. These changes imply that deep energy levels, which were also considered to be introduced by defects, were dominant and weakened the effects of the shallow energy levels. Increase in the concentration of the deep trapping levels resulted in gradual decrease of the signal amplitude and degradation in the energy resolution. The peak for the alpha particles was obtained up to 5.5 × 10¹³ n/cm².     

Synthesis of nanophase tungsten carbide by electrical discharge machining

Tungsten carbide nanopowders were synthesized successfully by electric discharge machining followed by annealing under a nitrogen atmosphere. The tungsten workpieces were initially melted and evaporated on the working surface during the electric discharge machining process, and then the tungsten powders were reacted with the carbon electrode and the working medium of kerosene to form the nanocrystalline WC_1−x powders. The powders produced were characterized by XRD, SEM, and TEM. When annealing the powders under an N₂ atmosphere, the cubic phases of WC_1−x gradually changed to hexagonal W₂C and then were transformed fully to nanocrystalline hexagonal WC at 1200 °C, with the nanocrystalline tungsten carbide encapsulated in a carbon shell. On the other hand, under an H₂ atmosphere, the WC_1−x phase changed via a W₂C phase to reduced powders of pure tungsten at 1000 °C or were reduced directly from WC_1−x to elemental W.