The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy

The effects of growth temperature and nitrogen plasma biasing on the electrical and structural properties of InN grown using electron cyclotron resonance metalorganic molecular beam epitaxy (ECR MOMBE) have been investigated. These results are compared to those found from InN grown using a higher energy radio frequency (rf) plasma source (rf MOMBE). By varying the bias of the nitrogen plasma or the growth temperature, it is possible to achieve smooth surface morphologies. However, biasing can also be used to increase the mobility by a factor of two while the growth temperature has only a small effect. By contrast, use of an rf plasma improves mobility by nearly a factor of ten. None of the growth conditions investigated were found to significantly alter the electron concentration, which was measured to be 1−5 × 10²⁰ cm⁻³.     

Embedded benzocyclobutene in silicon: An integrated fabrication process for electrical and thermal isolation in MEMS

This paper reports a novel fabrication process to develop planarized isolated islands of benzocyclobutene (BCB) polymer embedded in a silicon substrate. Embedded BCB in silicon (EBiS) can be used as an alternative to silicon dioxide in fabrication of electrostatic micromotors, microgenerators, and other microelectromechanical devices. EBiS takes advantage of the low dielectric constant and thermal conductivity of BCB polymers to develop electrical and thermal isolation integrated in silicon. The process involves conventional microfabrication techniques such as photolithography, deep reactive ion etching, and chemical mechanical planarization (CMP). We have characterized CMP of BCB polymers in detail since CMP is a key step in EBiS process. Atomic force microscopy (AFM) and elipsometry of blanket BCB films before and after CMP show that higher polishing down force pressure and speed lead to higher removal rate at the expense of higher surface roughness, non-uniformity, and scratch density. This is expected since BCB is a softer material compared to inorganic films such as silicon dioxide. We have observed that as the cure temperature of BCB increases beyond 200 °C, the CMP removal rate decreases drastically. The results from optical microscopy, scanning electron microscopy, and optical profilometry show excellent planarized surfaces on the EBiS islands. An average step height reduction of more than 95% was achieved after two BCB deposition and three CMP steps.     

The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics

This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N ultra-thin (1 and 2 nm) films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. The current flow mechanism was analyzed on the basis of pre-breakdown, soft-breakdown and post-breakdown current-voltage (J-V) experiments. Based on α-V analysis (α=d[ln(J)]/d[ln(V)]) of the J-V characteristics, a non-ideal Schottky diode-like current mechanism with different parameters in various ranges of J-V characteristics is established, which limits the current flow in these structures independent of irradiation dose or magnitude of applied voltage during stress.     

Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions

Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In_1−xGa_x)(Se_1−yS_y)₂ based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 2³ full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82 nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17 nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21 nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum _value of 42 μΩ cm for Mo films deposited at 200 W DC power.     

电工电子技术CAI系统的实现

电工电子技术计算机辅助教学(CAI)系统,采用Matlab语言实现.系统包括电工技术、模拟电子、数字电子三类模块.系统以Matlab语言GUI设计系统界面,根据电工电子技术相关求解方程式,利用Matlab语言M函数、S函数编写程序求解并输出数字结果,同时利用SIMULINK建立电路仿真模型.     

A comprehensive theoretical study of halide perovskites ABX3

Solar cells based on halide perovskites have recently been attractive due to their excellent power conversion efficiency (PCE), lower cost and simple manufacture. Here, a series of halide perovskites (ABX₃: A = CH₃NH₃, CH(NH₂)₂, Cs, Rb; B = Pb, Sn, Ge; X = I, Br, Cl, F) were investigated by Density Functional Theory (DFT) calculations, together with Shockley-Queisser Maximum Solar Cell Efficiency (S-Q) and Spectroscopic Limited Maximum Efficiency (SLME) mathematical models. The results indicate that: the electronic structure of germanium perovskites bears a close similarity to that of lead perovskites with a small energy difference between the nonbonding orbital and antibonding orbitals, but with a large energy difference comparing with that of tin perovskites (0.6–1.7 eV for CsGeI₃ at Z point of the Brillouin zone, 0.7–1.4 eV for CH₃NH₃PbI₃ and 1.4–2.2 eV for CH₃NH₃SnI₃ at R point of the Brillouin zone), which is attributable to the atomic level, where the 4s orbital energy of Ge (−11.5 eV) is close to the 6s orbital energy of Pb (−11.6 eV), but the 5s orbital energy of Sn (−10.1 eV) is significantly high. Therefore, germanium perovskites possess as high absorption coefficient around solar spectrum as lead perovskites, while tin perovskites only have low absorption coefficient, which makes the short-circuit current of CsGeI₃ and CH₃NH₃PbI₃ (0.017 Acm⁻² and 0.016 Acm⁻², simulated by SLME with a 200 nm absorber under AM1.5G) are higher than that of CH₃NH₃SnI₃ (0.015 Acm⁻²) even if the bandgap of CsGeI₃ and CH₃NH₃PbI₃ (1.51 eV and 1.55 eV) are larger than that of CH₃NH₃SnI₃ (1.21 eV). Meanwhile, the effective mass of electrons and holes are approximate for germanium perovskites and lead perovskites (0.14:0.19 for CsGeI₃ and 0.12:0.12 for CH₃NH₃PbI₃), indicating a balanced electrons and holes transport, whereas the electrons transport is much slower than the holes transport for tin perovskites due to the effective mass of electron is much larger than that of hole (0.17:0.04 for CH₃NH₃SnI₃). As a result, the PCE of CsGeI₃ (27.9%) and CH₃NH₃PbI₃ (26.7%) is higher than that of CH₃NH₃SnI₃ (19.9%).     

Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films

In this study, we investigate the influence of nanocrystalline diamond (NCD) thin film morphology and thickness on their electrical properties. NCD films are grown on p-type Si substrates with varied thicknesses from 250 to 788 nm. Electrical contacts are formed from combination of Ti/Au metal layers (100 nm thick each). The I-V and breakdown field measurements are used to analyze the electrical properties of metal/NCD/Si sandwich structure. In addition, NCD films are analyzed by scanning electron microscopy and Raman spectroscopy for better interpretation of the I-V measurements.     

Top down fabrication of long silicon nanowire devices by means of lateral oxidation

The process for the fabrication of devices based on a single silicon nanowire with a triangular section is presented and discussed. The top down fabrication process exploits the properties of silicon anisotropic etching for the realization of very regular trapezoidal structures, that can be uniformly reduced in controlled way by means of lateral oxidation. This allows the reproducible realization of nanowires smaller than 20 nm, and with a length of several micrometers, starting from relatively big structures that, even if electron beam lithography has been used in the present work, could be realized also by other (as optical) lithographic techniques. Nanowires are already placed between silicon contacts for electrical transport characterization. The process, compatible with the actual MOS technology, is suitable for a massive, large-scale production of silicon nanowire based devices and it allows a flexible platform for multigate and more complex structures and devices. The nanowire triangular section is a step toward the integration of three-dimensional devices. Electrical characteristics of silicon nanowire FETs, both p- and n-doped, will be reported and discussed.     

基于数据挖掘的电类基础课与专业课成绩相关性实证分析

在高校人才培养方案中,课程设置非常重要,课程结构是否合理会直接影响到人才培养的质量。专业基础课是为学生掌握专业知识、学习科学技术、发展相关能力打下坚实的基础。合理科学设置电类基础课程是一个非常复杂的问题,其中影响之一就是电类基础课对专业知识和技能的支撑程度。本文使用数据挖掘分析方法,以某一专业的学生学习成绩为研究对象,挖掘出电类基础课对其专业课的支撑作用,为教学管理、课程设置及学时安排提供决策信息支持与参考。