Novel alkaline earth silicate sealing glass for SOFC: Part II. Sealing and interfacial microstructure

This is the second part of a study of a novel Sr–Ca–Ni–Y–B silicate sealing glass for solid oxide fuel cells (SOFC). Part I of the study addresses the effect of NiO on glass forming, thermal, and mechanical properties, and is presented in the preceding paper. In this paper (part II), candidate composite glass with 10 vol.% NiO was tested for sealing standard coupons of Ni/YSZ anode-supported YSZ electrolyte bilayer and metallic interconnect Crofer22APU at various temperatures. Samples sealed at the highest temperature (1050 °C) showed hermetic seal after fully reduction and 10 thermal cycles. The interfacial microstructure characterization showed no distinct reactions at the interfaces of glass/YSZ or glass/metal, though some segregation of Ni was found along the glass/metal interface. Possible reactions were discussed. Overall the composite glass with 10 vol.% NiO appeared to be a good candidate for SOFC sealing.     

Photoluminescence enhancement and atmosphere-dependent photovoltaic performance in CdS nanorod arrays/MEH-PPV hybrid

Performance improvement of CdS nanorod arrays (NRA)/poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) hybrid solar cells (HSCs) during the storage in ambient atmosphere has been demonstrated. An unusual photoluminescence (PL) enhancement was observed after MEH-PPV hybridizing with CdS NRA due to the abundance of S-vacancy-induced interface electron traps in CdS NRA, which was confirmed by temperature-dependent PL and charge transport analysis. By investigating on the time-resolved photoluminescence (TRPL) and current-voltage characteristics, we demonstrated that the performance improvement of CdS NRA/MEH-PPV HSCs was contributed to the co-effects of interface electron trap-oxygen interaction and MEH-PPV-oxygen interaction, and the contribution ratio between these two interactions was varied over time in air.     

Effect of interphase matter transfer on condensation on low-finned tubes--a theoretical investigation

The paper gives theoretical results for condensation on low-finned tube in which the temperature drop at the liquid-vapour interface due to interphase matter transfer (interface resistance) is included. The condensation coefficient is taken as unity. Results show, for the case of steam, that in the regions of the fin surface where the condensate film is very thin, the local heat flux can be reduced by a factor of around 2 when the interface resistance is included. Theoretical results for the top of the tube show a significant drop in average vapour-to-surface heat-transfer coefficient with decrease in vapour pressure (around half associated with interface resistance and half due to fluid property variation) in line with earlier measurements.     

用C++Builder开发ISAPI接口程序

本文介绍了一种在C + +Builder开发环境下实现ISAPI模块的方法 ,充分发挥ISAPI技术在Internet应用上优势 ,对理解WindowsAPI技术的扩展有很大帮助     

Analysis of illumination-intensity-dependent j–V characteristics of ZnO/CdS/CuGaSe2 single crystal solar cells

Current–voltage characteristics of ZnO/CdS/CuGaSe₂ single crystal solar cells measured at room temperature are investigated depending on illumination intensity. The characteristics can be described using the two-diode model, indicating two current transport mechanisms acting in the cells. The first and dominant mechanism is recombination of carriers at the interface between CdS and CuGaSe₂. The second one is recombination in the depletion region, which has been found to have a small effect on the solar cell photovoltaic performance. Both the diode ideality factor and the saturation current density of the dominant diode increase under illumination. A model based on interface recombination can explain these results. This model allows the estimation of diffusion voltage, capture cross-section of holes at the interface and mobility of electrons in the CdS layer.     

OPC技术在DCS与工厂管理网数据通讯中的应用

本文介绍了OPC通讯的原理和方法，详细叙述了OPC接口在DCS与工厂管理网数据通讯中的实现，表明了OPC技术在企业管控一体化信息集成中的强大功能及应用特点。     

Research on the fracture behavior of PBX under static tension

The fracture behavior of polymer-bonded explosive （PBX） seriously affects the safety and reliability of weapon system. The effects of interface debonding and initial meso-damage on the fracture behavior of PBX under quasi-static tension are studied using numerical method. A two- dimensional representative volume element （RVE） is established based on Voronoi model in which the component contents could be regulated and the particles are randomly distributed. A nonlinear damage model of polymer matrix relative to matrix depth between particles is constructed. The results show that the simulated strain-stress relation is coincident with experiment data. It is found that interface debonding leads to the nucleation and propagation of meso-cracks, and a main crack approximately perpendicular to the loading direction is generated finally. The interface debonding tends to occur in the interface perpendicular to the loading direction. There seems to be a phenomenon that strain softening and hardening alternatively appear around peak stress of stress and strain curve. It is shown that the initial damages of intragranular and interfacial cracks both decrease the modulus and failure stress, and the main crack tends to propagate toward the initial meso-cracks.     

The interface states analysis of the MIS structure as a function of frequency

The energy distribution of interface states (N_ss) and their relaxation time (τ) were of the fabricated the Al/SiO₂/p-Si (MIS) structures were calculated using the forward bias current-voltage (I-V), capacitance-frequency (C-f) and conductance-frequency (G-f) measurements. Typical ln[I/(1 − exp(−qV/kT)] versus V characteristics of MIS structure under forward bias show one linear region. From this region, the slope and the intercept of this plot on the current axis allow to determine the ideality factor (n), the barrier height (Φ_b) and the saturation current (I_S) evaluated to 1.32, 0.77 eV and 3.05 × 10⁻⁹ A, respectively. The diode shows non-ideal I-V behaviour with ideality factor greater than unity. This behaviour is attributed to the interfacial insulator layer at metal-semiconductor interface, the interface states and barrier inhomogeneity of the device. The energy distribution of interface states (N_ss) and their relaxation time (τ) have been determined in the energy range from (0.37 − E_v) to (0.57 − E_v) eV. It has been seen that the N_ss has almost an exponential rise with bias from the mid gap toward the top of valance band. In contrary to the N_ss, the relaxation time (τ) shows a slow exponential rise with bias from the top of the E_v towards the mid gap energy of semiconductor. The values of N_ss and τ change from 6.91 × 10¹³ to 9.92 × 10¹³ eV⁻¹ cm⁻² and 6.31 × 10⁻⁴ to 0.63 × 10⁻⁴ s, respectively.     

Tunable permittivity in polymer composites filled with Si-based semiconductors by regulating induced polarization

Induced polarization shows a significant influence on dielectric permittivity of 0–3 polymer composites containing Si-based semi-conductive fillers. The nature of induced polarization is the increased electric conductivity or decreased band gap in Si-based semi-conductive fillers. In this work, the dependence of induced polarization onto particle size of α-SiC filler together with polarity of polymer matrix and Si-based semi-conductive filler has been elaborately investigated by detecting the permittivity of composites. It was found that increasing the grain size of SiC filler, improving the polarity of polymer matrix and reducing the band-gap of Si-based semi-conductive filler could favor the enhancement of the overall induced polarity in the composites. As a result, the significantly improved dielectric permittivity of composites higher than both of the neat polymer and filler was observed depending on the constituents of the composites. The highest dielectric permittivity of ~215@1 kHz was achieved in poly(vinyl alcohol) based composite filled with 60 vol% of 12 µm SiC particles. The dielectric permittivity of these 0–3 composites could be well tuned in a wide range through altering their constituents. This work might open a facile route to obtain the promising high-performance dielectric composite materials by regulating the degree of induced polarization.