High‐Performance Air‐Processed Polymer–Fullerene Bulk Heterojunction Solar Cells

High photovoltaic device performance is demonstrated in ambient‐air‐processed bulk heterojunction solar cells having an active blend layer of organic poly(3‐hexylthiophene) (P3HT): [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state‐of‐the‐art bulk heterojunction devices fabricated in air‐free environments. High‐resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post‐fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an ～4 nm aluminum oxide hole‐blocking layer present at the electron‐collecting contact interface.     

航天用刚挠印制板可靠性研究

通过分析影响航天用刚挠印制板可靠性的主要因素分层和金属化孔的质量,从刚挠印制板的设计、工艺控制等角度提出适合于航天用刚挠印制板的材料、关键工序工艺条件以及特殊检验要求。通过振动试验、加速度试验、加严热冲击试验、焊接后高低温循环试验等试验证明了高可靠性刚挠印制板可以应用于航天器产品,并给出航天用刚挠印制板具体的材料、生产工艺及关键工艺参数建议。     

Enhanced Performance of I2‐Free Solid‐State Dye‐Sensitized Solar Cells with Conductive Polymer up to 6.8%

An iodine‐free solid‐state dye‐sensitized solar cell (ssDSSC) is reported here, with 6.8% energy conversion efficiency—one of the highest yet reported for N719 dye—as a result of enhanced light harvesting from the increased transmittance of an organized mesoporous TiO₂ interfacial layer and the good hole conductivity of the solid‐state‐polymerized material. The organized mesoporous TiO₂ (OM‐TiO₂) interfacial layer is prepared on large‐area substrates by a sol‐gel process, and is confirmed by scanning electron microscopy (SEM) and grazing incidence small‐angle X‐ray scattering (GISAXS). A 550‐nm‐thick OM‐TiO₂ film coated on fluorine‐doped tin oxide (FTO) glass is highly transparent, resulting in transmittance increases of 8 and 4% compared to those of the bare FTO and conventional compact TiO₂ film on FTO, respectively. The high cell performance is achieved through careful control of the electrode/hole transport material (HTM) and nanocrystalline TiO₂/conductive glass interfaces, which affect the interfacial resistance of the cell. Furthermore, the transparent OM‐TiO₂ film, with its high porosity and good connectivity, exhibits improved cell performance due to increased transmittance in the visible light region, decreased interfacial resistance ( Ω ), and enhanced electron lifetime ( τ ). The cell performance also depends on the conductivity of HTMs, which indicates that both highly conductive HTM and the transparent OM‐TiO₂ film interface are crucial for obtaining high‐energy conversion efficiencies in I₂‐free ssDSSCs.     

刚挠印制板镀覆孔孔壁开裂原因分析

为适应电子产品的发展,刚挠印制板的应用范围越来越大,用户对刚挠板性能的要求越来越高.概述了刚挠印制板镀覆孔孔壁发生开裂的原因,从基材、钻孔、孔金属化前处理和化学镀铜等角度分析并解决镀覆孔开裂问题.     

An antimonene modified hole extraction layer for high efficiency PEDOT:PSS-free nonfullerene organic solar cells

In this paper, a bilayer hole extraction layer (HEL) with solution-processed molybdenum trioxide (MoO₃) and two-dimensional (2D) material of antimonene was developed to achieve high performance nonfullerene organic solar cells (NF–OSCs). The application of antimonene facilitates effective charge extraction and lowered recombination loss, achieving improved photovoltaic performance. By inserting the antimonene layer, power conversion efficiency (PCE) of devices with MoO₃ HEL was increased from 8.92% to 11.30% in OSCs with non-fullerene systems of PBDB-T-2F:IT-4F, which was even much higher than that of the devices with PEDOT:PSS HEL (10.59%). Results make it clear that the solution-processed bilayer MoO₃/antimonene HEL shows great potential for application in high performance PEDOT:PSS-free NF–OSCs.     

Dopant-Free Hole Transport Materials Based on a Large Conjugated Electron-Deficient Core for Efficient Perovskite Solar Cells

Hole transport materials (HTMs) play a significant role in device efficiencies and long-term stabilities of perovskite solar cells (PSCs). In this work, two simple dopant-free HTMs are designed with a large conjugated electron-deficient core. On the one hand, a large coplanar backbone endows enhanced π–π stacking and reduced hole hopping distance. On the other hand, the incorporation of electron-deficient unit can easily tune the energy levels as well as increase hole mobilities. Combining these two advantages together, 12,13-bis(2-ethylhexyl)-3,9-diundecyl-12,13-dihydro[1,2,5]thiadiazole[3,4-e]thieno[2″,3″:4,5]thieno[2′,3′:4,5]pyrrolo[3,2-g]thieno[2′,3′:4,5]thieno[3,2-b]indole is chosen as the large electron-deficient core to construct two novel dopant-free HTMs, Y6-T and Y-T. Both Y6-T and Y-T behave suitable highest occupied molecular orbital levels, good hole mobilities, as well as strong hydrophobicities. After careful device optimization with a passivation agent, Y-T delivers an impressive power conversion efficiency of 20.29%, which is higher than that of Y6-T (18.82%) and doped spiro-OMeTAD (19.24%). Moreover, PSCs based on Y6-T and Y-T show much better long-term stabilities than spiro-OMeTAD due to the intrinsic hydrophobicity. Therefore, this work provides a promising candidate as well as a useful design strategy for exploring dopant-free HTMs, which may pave the way for the commercialization of PSCs.     

D型微孔光纤偏振响应特性研究

本文对D型微孔光纤的偏振响应特性进行了实验测试和理论上的数值计算,表明其出射光的偏振度依赖于入射光的偏振方向,存在着明显的极化效应,这种效应是由于其特有的D型微孔结构破坏了光纤结构的旋转对称性而引起的,数值计算的结果和实验值基本相符合。     

Hole trapping in E-beam irradiated SiO2 films

Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’ SiO₂ films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated by avalanche breakdown of then-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between 1 × 10∼⁻¹³ and 1 × 10⁻¹⁴ cm² is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers are strong evidence for an amphoteric uncharged trap generated by ionizing radiation.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.     

热空穴应力下LDD nMOSFET中GIDL电流退化特性研究*

本文通过GIDL电流参数IDIFF对空穴应力下LDD nMOSFET中的GIDL电流退化进行了深入研究。IDIFF是在相同VDG下漏电压VD=1.4V和栅电压VG=-1.4V两种情形下的GIDL电流之差。空穴陷落在栅漏交叠区的氧化层中导致GIDL电流退化。这些陷落的空穴减小了上述两种对称的测试情形下的横向电场差ΔEX从而使得IDIFF表小。从GIDL电流中提取的IDIFF随着应力时间t的增加而减小。IDIFF的退化量ΔIDIFF,MAX与应力时间成幂指数关系：ΔIDIFF,MAX∝tm, m=0.3. 并用热电子应力实验验证了HHS实验中的相关物理机理。