超高强度钢薄壁深盲孔弹体的精密成形技术

通过变形工序的合理安排以及变形程度的合理分配,设计合理的原始坯料形状,采用适宜的冷、温锻模具结构,获得了一种能够用于大批量工业生产的超高强度钢制薄壁深盲孔弹体的精密成形工艺,从而解决了其制造过程中的关键技术,为宇航、兵器等行业普遍采用的这类零件的生产提供了一种实用、高效、经济、可靠的精密成形工艺。     

MOS场引晶体管双极理论和实验

提出场引晶体管双极理论.替代已55年久,1952 Shockley发明单极理论.解释近来双栅纳米硅MOS晶体管实验特性--两条电子和两条空穴表面沟道,同时并存.理算晶体管输出特性和转移特性,包括实用硅基及栅氧化层厚度.理算比较最近报道实验,利用硅FinFET,含(金属/硅)和(p/n)结,源和漏接触.实验支持双极理论.建议采用单管,实现CMOS倒相电路和SRAM存储电路.     

导通孔电镀铜填充技术

概述了下一代PCB用镀铜层导通孔填充技术。     

High‐Performance Air‐Processed Polymer–Fullerene Bulk Heterojunction Solar Cells

High photovoltaic device performance is demonstrated in ambient‐air‐processed bulk heterojunction solar cells having an active blend layer of organic poly(3‐hexylthiophene) (P3HT): [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state‐of‐the‐art bulk heterojunction devices fabricated in air‐free environments. High‐resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post‐fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an ～4 nm aluminum oxide hole‐blocking layer present at the electron‐collecting contact interface.     

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

From the temperature dependence of the hole concentration in unirradiated lightly Al-doped 4H-SiC epilayers, an Al acceptor with E_V + 0.2 eV, which is an Al atom (Al_Si) at a Si sublattice site, and an unknown deep acceptor with E_V + 0.35 eV are found, where E_V is the top of the valence band. Both the densities are similar. With irradiation of 0.2 MeV electrons the Al acceptor density is reduced, while the unknown deep acceptor density is increased. Judging from the minimum electron energy required to displace a substitutional C atom (C_s) or the Al_Si, the bond between the Al_Si and its nearest neighbor C_s is broken due to the displacement of the C_s by this irradiation. Moreover, the displacement of the C_s results in the creation of a complex (Al_Si-V_C) of Al_Si and a carbon vacancy (V_C), indicating that the possible origin of the deep acceptor with E_V + 0.35 eV is Al_Si-V_C.     

光子晶体光纤拉制参数对包层气孔结构的影响

分析了光子晶体光纤(PCF)拉丝工艺参数对光纤毛细管及最终结构的影响,结果表明,通过调节温度、送料速度和拉制速度等参数可以在一定程度上调整最终的气孔结构,但难以拉制出结构完善的PCF.为此提出了惰性气体施压法,实验表明,通过调节施压量的同时结合上述参数的调节,可有效控制光纤的结构参数,拉制出横纵向均匀性良好的PCF.     

IC封装基板的新一代过孔互连技术

文章主要介绍封装基板芯板通孔的电镀填孔技术及其特点。     

利用镀液组成改善镀层厚度均匀性

概述了利用CuSO4镀液组成控制PCB的贯通孔镀层均匀性和导通孔填充镀层均匀性。     

气膜孔布置形式对发动机中心锥冷却与红外抑制特性的影响

对发动机中心锥的红外抑制技术开展数值研究,在中心锥上采取气膜冷却技术,比较了不同气膜孔布置形式对冷却与红外抑制特征的影响.外涵低温气流通过支板引入中心锥,在锥体前端形成气膜覆盖,使支板与中心锥壁面得到了有效冷却.研究发现,采用气膜冷却后,喷管腔体壁面温度显著降低,中心锥与支板的壁面温度降低13.5％和14.6％.3～5μm波段上红外辐射得到有效抑制,喷管正后方最大降低41％,0～30°范围内红外辐射特征得到显著抑制.