量子阱材料折射率低偏振相关性研究

分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响,并剖析了其中的物理机理.研究表明:对于量子限制效应带来的量子阱折射率偏振相关性,阱宽越小或垒高越高,折射率偏振相关性越大.压应变增大时,折射率偏振相关性增大,张应变可以克服量子限制效应带来的折射率偏振影响.对于不同阱宽和垒高的量子阱,均存在合适的张应变量使折射率偏振相关性最小,且阱宽越小或垒高越高所需的张应变量越大.根据以上分析,提出量子阱材料折射率低偏振相关设计方法,并据此设计出C波段(1 530～1 565 nm)内折射率低偏振相关(小于0.03)的量子阱材料In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5.研究结果有助于优化设计光网络中关键器件.     

架设在5层楼楼顶的双锥中波小天线

简要介绍了双锥中波小天线的结构和工作原理。将双锥中波小天线架设到5层楼楼顶,能满功率播出且辐射效果与自立塔相当,保证了中波节目的安全播出。简单介绍了为此所做的屏蔽及接地工程。     

High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO₂ by Al (from Al_0.8Ga_0.2As) is employed to generate Si and O to effect layer disordering. The SiO₂-Al_0.8Ga_0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As₄ overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement Al_yGa_1−yAs-GaAs-In_xGa_1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In_0.1Ga_0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the Al_yGa_1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (I_th ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation.     

Terahertz Semiconductor Quantum Well Devices

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated. The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons. Background limited infrared performance (BLIP) operations are observed for all samples (three in total) ,designed for different wavelengths. BLIP temperatures of 17,13, and 12K are achieved for peak detection frequencies of 9.7THz(31μm) ,5.4THz(56μm) ,and 3.2THz(93μm) ,respectively. A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied. The δ-doping density for each period varies from 3.2 × 1010 to 4. 8 × 1010cm-2. We observe that the lasing threshold current density increases monotonically with doping concentration. Moreover, the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically. Interestingly the observed maximum lasing temperature is best at a doping density of 3.6 × 1010cm-2.     

Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces

The MOVPE overgrowth of high [0 1¯ 1]-oriented ridges confined at sides by facets related to {n 1 1} crystallographic planes is reported. We studied the influence of the side tilt on the thickness of the AlGaAs and GaAs epitaxial layers grown under the condition of the kinetic growth mode. The multi quantum well (MQW) structures were prepared on the sides of ridges tilted at 54.7°, 45° and 30° to (1 0 0). The sidewall surface morphologies before and after epitaxial growth were evaluated and compared. We observed no tendency towards planarization towards a neighbouring high-index crystallographic plane, such as (2 1 1) and (3 1 1). We also showed that the quantum wells of the MQW structure make a smooth transition over the edge between the top surface and the facet as both AlGaAs and GaAs grew at similar rates on the surfaces.     

油气井用隔板起爆器的起爆能力

为了提高油气井用隔板起爆器的起爆能力,在传统隔板起爆器的基础上,改变了其受主装药盲孔的几何结构和受主装药结构,设计出一种油气井用隔板起爆器,并对其进行了起爆能力的实验研究.实验结果显示,油气井用隔板起爆器起爆油气井耐温传爆管的最大空气隙距离为85 mm,而传统隔板起爆器和油气井耐温传爆管分别为20 mm和65 mm,因...     

LD端面泵浦的1.57μm内腔式OPO

1.57 μm波长激光为人眼安全波长激光。将KTP晶体置于一个由LD端面泵浦、声光调Q的Nd:YVO4晶体双凹谐振腔内,利用KTP表面镀膜建立了内腔式OPO,实现了重复率在5～40 kHz范围内1.57 μm脉冲激光的稳定输出。实验结果表明,激光的阈值将随声光调Q器重复率的增加而升高,重复率为5 kHz时得到最低阈值1.52 W。重复率为15 kHz、泵浦功率为3.7 W时,输出光平均功率为305 mW,脉冲宽度50 ns,峰值功率400 W。     

量子阱红外探测器掺杂阱中能级的计算

量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。为了提供足够的载流子跃迁,阱层一般为重掺杂层。重掺杂使半导体材料禁带宽度变窄,从而改变量子阱中能级的位置。通过对不同温度、量子阱区不同掺杂浓度条件下的量子阱材料PL 谱进行测量,得出PL 谱峰值波长对应的电子跃迁峰值能量,它与阱中基态能级的位置有关。分别计算了考虑和不考虑禁带变窄效应时的电子跃迁峰值能量,并与实验结果相比较,可以看出考虑禁带变窄效应时与实验结果相吻合,因此掺杂量子阱区能级的计算需要考虑禁带变窄效应,这样可以较为精确的得出阱中能级的位置。     

Wi-Fi认证测试的热点与展望

介绍了无线局域网Wi-Fi认证的基本框架;然后重点阐述了Wi-Fi认证的热点项目,包括专用设备(ASD)认证、Wi-Fi与蜂窝网双模终端RF性能认证、Wi-Fi安全设置认证的原理与流程;最后分析了Wi-Fi认证的未来发展方向。     

波导壁上缝隙天线导纳测量

本文提出了一种测量波导窄壁上单缝天线导纳的新方法——归一化S参数法,这种方法可消除波导段引入的损耗及附加相移,不仅可精确测出单缝的电导值,而且还可测出电纳值。S波段缝隙天线导纳的测量结果与理论值吻合,证明了该方法的正确性。最后分析了主要误差源及减小测试误差的措施。