声光Q开关用1.064μm融石英低损耗增透膜实验研究

根据声光腔内调Q对光学薄膜的要求,对1.064 μm声光Q开关用融石英低损耗增透膜进行了初步实验研究,通过对工艺因素的比较分析,使用基本配置型国产设备得到了较好的结果.讨论了为降低薄膜损耗,提高薄膜激光损伤阈值应做的几项工作.     

EDTA对KDP晶体光学性质影响

本文探讨了不同掺杂浓度下,EDTA对KDP晶体光学性质的影响。结果表明,高浓度EDTA的KDP晶体光散射有明显的影响,但对光学均匀性和光损伤阈值无明显影响。     

Effect of plasma process-induced damage on bias temperature instability of MOSFETs

For a surface-channel n-MOSFET and a buried-channel p-MOSFET, the effect of plasma process-induced damage on bias temperature instability (BTI) was investigated. The gate oxide thickness, t_ox, of the test MOSFETs was 2.0, 3.0, or 4.5 nm. The shifts of threshold voltage V_th and of linear drain current I_dlin were measured after applying a BTI stress at a temperature of 125 °C. The measured shifts of V_th and I_dlin indicate that BTI on ultra-thin gate CMOS devices appears only in the form of SiO₂/Si interface degradation, and that the positive BTI for the n-MOSFET as well as the negative BTI for the p-MOSFET is important for the reliability evaluation of CMOS devices. Because of positive plasma charging to the gate, a protection diode was very efficient at reducing BTI for the p-MOSFET, but it was much less effective for the n-MOSFET.     

光学玻璃材料的破坏和折射率变化的测量研究

介绍了一套用Nomarski干涉仪测量、面阵CCD摄像、微机实时监控记录光学玻璃材料在激光作用下破坏的装置,并对试验室原有的Nomarski干涉仪进行了优化设计,提高了它的探测灵敏度,使整套设备更加小型化.     

光电探测器的激光破坏（损伤）阈值分析

本文系统收集各种光电探测器及其相似材料在受到激光辐照时所导致的软、硬破坏效应（有时称为激光损伤）,综合对比分析各种破坏阈值的大小,为激光与光电探测器相互作用的研究提供一个较为全面系统的参考。     

含能破片战斗部毁伤效应研究

为提高战斗部的毁伤效能,对含能破片战斗部开展了探索研究,介绍了含能破片战斗部的概念和特点,设计制备了AI/PTFE(聚四氟乙烯)质量比为30∶70配方的含能破片战斗部,对2.5,10,20 mm钢质靶进行侵彻实验,研究了该含能破片对靶板侵彻能力及靶后毁伤效率.试验结果表明:50 mm口径含能破片战斗部穿透了20 mm厚...     

Effect of hydrogen annealing on hot-carrier instability of X-Ray irradiated CMOS devices

In the very large scale integration (VLSI) technology, the need for high density and high performance integrated circuit (IC) chip demands advanced processing techniques that often result in the generation of high energy particles and photons. Frequently, the radiation damage are introduced by these energetic particles and photons during device processing. The radiation damage created by x-ray irradiation, which can often occur during metal sputtering process, has been shown to potentially enhance hot-carrier instability if the neutral traps which act as electron or hole traps in the silicon dioxide is not annealed out. In this paper, we investigate the effects of annealing using different hydrogen contents and temperatures on the device characteristics and hot carrier instability of 0.5 μm CMOS devices after 1500 mJ/cm² synchrotron x-ray irradiation. Three different annealing conditions were employed; 400° C H₂, 450° C H₂, and 400° C H₂ + N₂. It is found that for all three different hydrogen anneals the normal characteristics of irradiated CMOS devices can be effectively recovered. The hot-carrier instability of bothp- andn-channel MOSFETs are significantly enhanced after x-ray irradiation due to the creation of neutral traps and positively charged oxide traps. After high H₂ (100%) concentration anneals at 450° C, the hot-carrier instability in irradiatedn-channel devices is greatly reduced and comparable to the non-irradiated devices. Although the hot-carrier instability inp-channel devices is also significantly reduced after annealing, the threshold voltage shifts are still enhanced as compared to the devices without exposure to x-ray irradiation during maximum gate current stress. For those non-irradiated, but hydrogen-annealedp-channel devices, the hot-carrier instability was observed to be worse than the non-irradiated device without hydrogen annealing.     

Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique

It is reported on the passivation of the mirror facets, opened in the air, of ridge waveguide InGaAs/GaAs/AlGaAs single quantum well (λ=980 nm) laser diodes. The passivation concept consists of two steps, namely, oxide removal by irradiation of the mirror facets with a pulsed KrF laser, immediately followed by the deposition of a thin silicon layer. The experimental arrangement (the process operation and the aging behavior-resistance to catastrophic optical damage) of the lasers thus treated are described. The structural modification of the laser facets, as probed by micro-Raman spectroscopy and Rutherford backscattering spectroscopy, and the calibration technique used to assess the rate of oxide removal are also presented.     

激光窄条喷丸成形的实验研究

利用短脉冲激光对LY12CZ航空铝合金进行了窄条激光喷丸(LP)成形。激光脉冲参数:波长为1.06μm,脉冲宽度为23 ns,光斑直径为7 mm,输出能量为22 J。试样外形尺寸为100 mm×25 mm×2 mm,喷丸窄条宽度为7 mm,条带内相邻光斑的距离为4 mm,相邻喷丸条带中心间距为15 mm。利用弧高仪测试样变形后的变形量,用X-350A残余应力测试仪测其残余应力,用HVS-1000硬度计测其显微硬度和用Taylor Hobson-5M测表面粗糙度。实验结果表明,试样经激光喷丸后,变成了曲率半径为1.87 m的单曲率件,冲击硬度得到提高,喷丸条带内的表面粗糙度值增大,但仍然保持光滑,试样上下表面的残余应力均有显著提高,其激光喷丸面的残余应力平均增加了250%,下表面平均增加了75%,喷丸条带内的硬度平均值增加约40%。     

腔镜对掺铥光纤激光器输出性能的影响

由于2 mm激光处于人眼安全区和大气的弱吸收带,因此掺铥光纤激光器受到了广泛关注。比较了掺铥双包层光纤在激光二极管(LD)抽运时后端分别采用平面镜和凹面镜下激光器输出功率特性。实验和理论表明,由于光纤端面和平面反射镜之间存在着间隙、倾斜以及光纤端面存在缺陷等因素,使得激光腔的损耗增大,激光器输出性能受到严重影响。根据波动理论分析了光纤后端面分别采用平面反射镜和凹面反射镜下谐振腔插入损耗特性,理论表明采用凹面反射镜时谐振腔损耗要比采用平面反射镜时小。光纤后端的腔镜采用凹面镜时,获得最大输出功率为22 W,对应的中心波长为1998.6 nm,相对于入射抽运光功率的斜率效率为43%的激光输出。相比采用平-平腔的激光器其斜率效率提高了10%,镜面承受的热损伤得到大幅缓解。