自适应估计信号个数的频谱信号提取算法

无线电监测频谱数据中包含有大量的信号,准确提取这些信号有利于掌握全频段的频谱使用情况。实际信号的频谱由于受噪声干扰,会出现信号频带内个别频点能量值低于检测门限的情况,此时传统的门限检测算法会将该信号错估为多个信号,产生多个虚假的相邻信号间隔,导致频谱信号提取的准确率下降。对此,根据虚假相邻信号间隔特点,提出一种自适应估计信号个数的频谱信号提取算法,该算法可自动、准确估计频谱监测数据中电磁信号的个数,并将对应的信号及频谱信息提取出来。实验结果表明,该方法具有自适应性、强鲁棒性和高准确性,有效提高了频谱信号提取的准确率,为军、民电磁环境的识别与掌握提供基础的电磁信号数据支撑。     

双向协作系统的中继选择和功率分配策略

针对瑞利衰落信道下双向多中继协作通信系统,为了降低中断概率,提出了一种基于最小化中断概率的中继选择策略和功率分配方案。首先联合考虑两条链路的中继节点处信噪比和信道增益实现双链路中继选择,然后推导出一种新的最优中继下双向放大转发协作中断概率的近似表达式上界,并利用凸优化求解得到使中断概率最小的最优功率分配解。仿真结果表明,与现有策略相比,提出的策略能够明显降低系统中断概率和误码率,显著提高系统性能。     

一种低复杂度信道模拟器的设计

针对TD-LTE射频一致性测试系统专项的需求及通用信道模拟器设计周期长、复杂度高的现状,研究了影响无线信道特性的路径损耗、阴影衰落、多径多普勒效应和高斯白噪声等因素,并相应提出了一种新的计算正余弦函数方法和高斯白噪声产生方法。通过信道理论建模、Matlab链路搭建进行模型优化分析以及基于Xilinx公司Virtex-6芯片的模型FPGA实现,得到了一种简单有效的信道模拟器。实验表明,用TD-LTE基带信号作为激励,该信道冲激响应与Matlab理论值误差在2‰之内,且模型不涉及SCM、WINNER等模型天线方向图、多链路等高复杂度模块,说明该信道模拟器具有简便性和可靠性。     

高性能ZnSnO∶Li/ZnSnO双有源层TFT电学性能的研究

双有源层以迁移率高、开关比高、大面积均匀性好等优点成为近年研究热点。采用射频磁控溅射方法,制备了ZnSnO∶Li/ZnSnO薄膜晶体管(TFT),对其电学特性进行了测试,并研究了器件迁移率提高的原因及其内在的微观机制。研究发现,ZTO∶Li/ZTO TFT表现出了良好的电学特性,其场效应迁移为率为13.98 cm²/(V·s),亚阈值摆幅为0.84 V/dec,开关比为1.13×10⁹。通过XPS对其薄膜进行分析发现,Li的引入导致薄膜中氧和金属结合键的浓度增加,氧空位浓度减少,从而使得TFT的迁移率增大,开关比增大,亚阈值摆幅减小。     

双重JPEG压缩图像篡改区域检测与定位

对JPEG(joint photographic experts group)图像实施篡改往往会产生双重JPEG(double JPEG,DJPE) 压缩痕迹,分析该痕迹有助于揭示图像压缩历史并实现篡改区域定位。现有算法在图像尺寸较小和质量因子(quality factor,QF) 较低的时候性能不佳,对两个QF的组合情况存在限制。本文提出了一种端到端的混合QF双重JPEG压缩图像取证网络,命名为DJPEGNet。首先,使用预处理层从图像头文件中提取表征压缩历史信息的量化表 (quantization table,Qtable) 特征,将图像从空域转换至DCT(discrete cosine transform)域构造统计直方图特征。然后,将两个特征输入到由深度可分离卷积和残差结构堆叠而成的主体结构,输出二分类结果。最后,使用滑动窗口算法自动定位篡改区域并绘制概率分布图。实验结果表明,在使用不同Qtable集生成的小尺寸数据集上,DJPEGNet所有指标均优于现有最先进的算法,其中ACC提高了1.78%,TPR提升了2.00%,TNR提升了1.60%。     

一种单材料双功函数栅MOSFET解析模型

An analytical surface potential model for the single material double work function gate(SMDWG) MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering(DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.     

Nested planar array: configuration design,optimal array and DOA estimation

Nested array enables to enhance localisation resolution and achieve under-determined direction of arrival (DOA) estimation. In this paper, we improve the traditional nested planar array to achieve more degrees of freedom (DOFs) and better angle estimation performance. The closed-form expressions for sensor positions of the improved array are given and the optimal array configuration for largest available DOFs is derived. Meanwhile, a computationally efficient DOA estimation algorithm is proposed. Specifically, we utilise two dimensional Discrete Fourier Transform (2D DFT) method to obtain the coarse DOA estimates; Subsequently, we achieve the fine DOA estimates by 2D spatial smoothing multiple signals classification (SS-MUSIC) algorithm. The proposed algorithm enjoys the same estimation accuracy as SS-MUSIC algorithm but with lower complexity because the coarse DOA estimates enable to shrink the range of spectral search. In addition, estimation of the number of signals is not required by 2D DFT method. Extensive simulation results testify the effectiveness of the proposed algorithm.     

高压双管反激变换器的设计

介绍一种双管反激的电路拓扑，分析了其工作原理，给出了一些关键技术参数的计算公式，设计并研制成功的30W 380VAC 50 Hz／510VDC／ 15.1VDC(1A)、 5.2VDC(2A)辅助开关电源具有功率密度高、变换效率高、可靠性高等优良的综合性能。该变换器在高电压输入情况下有重要的应用价值。     

AZO薄膜双靶PLD沉积及其光学性能分析

介绍了利用锌靶和铝靶在氧气气氛中进行掺铝氧化锌(AZO)透明导电薄膜的脉冲激光沉积(PLD)新方法，并与利用ZnO陶瓷靶沉积AZO薄膜的方法进行了对比，分析了此方法的优势和特点。描述了利用该方法在玻璃和硅片上沉积AZO薄膜的实验过程。通过透射光谱分析了沉积的透明导电膜在可见光区的透射性能，用X-射线衍射谱(XRD)研究了薄膜的结构。     

320×240 Pixels CMOS Digital Image Sensor with Wide Dynamic Range

A 320×240 CMOS image sensor is demonstrated,which is implemented by a standard 0.6 μm 2P2M CMOS process.For reducing the chip area,each 2×2-pixel block shares a sample/hold circuit,analog-to-digital converter and 1-b memory.The 2×2 pixel pitch has an area of 40 μm×40 μm and the fill factor is about 16%.While operating at a low frame rate,the sensor dissipates a very low power by power-management circuit making pixel-level comparators in an idle state.A digital correlated double sampling,which eliminates fixed pattern noise,improves SNR of the sensor, and multiple sampling operations make the sensor have a wide dynamic range.