首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   26494篇
  免费   2170篇
  国内免费   1313篇
电工技术   857篇
综合类   2294篇
化学工业   2701篇
金属工艺   3280篇
机械仪表   1682篇
建筑科学   2705篇
矿业工程   1261篇
能源动力   1599篇
轻工业   976篇
水利工程   709篇
石油天然气   1633篇
武器工业   166篇
无线电   3279篇
一般工业技术   3151篇
冶金工业   1119篇
原子能技术   202篇
自动化技术   2363篇
  2024年   106篇
  2023年   334篇
  2022年   558篇
  2021年   711篇
  2020年   736篇
  2019年   654篇
  2018年   595篇
  2017年   835篇
  2016年   807篇
  2015年   879篇
  2014年   1452篇
  2013年   1430篇
  2012年   1854篇
  2011年   2010篇
  2010年   1495篇
  2009年   1492篇
  2008年   1407篇
  2007年   1739篇
  2006年   1678篇
  2005年   1395篇
  2004年   1194篇
  2003年   1101篇
  2002年   944篇
  2001年   872篇
  2000年   776篇
  1999年   595篇
  1998年   419篇
  1997年   385篇
  1996年   324篇
  1995年   289篇
  1994年   206篇
  1993年   183篇
  1992年   149篇
  1991年   98篇
  1990年   61篇
  1989年   59篇
  1988年   42篇
  1987年   21篇
  1986年   15篇
  1985年   14篇
  1984年   15篇
  1983年   7篇
  1982年   13篇
  1981年   9篇
  1979年   8篇
  1978年   2篇
  1976年   2篇
  1959年   2篇
  1954年   1篇
  1951年   1篇
排序方式: 共有10000条查询结果,搜索用时 46 毫秒
71.
The spark and resistance sintering (SRS) of a mixture of Ti, Ni, and TiB2 powders was carried out to form a TiB2 dispersed TiNi alloy layer onto a Ti-6Al-4V alloy substrate. The strength and delamination resistance of the surface layer were evaluated by three-point bending tests. The results showed that the bending strength of the specimen with the TiNi alloy surface layer without TiB2 particles sintered at 1273 K was low because the crack initiation occurred at an early stage of loading in a thick interface layer containing brittle Ti-Ti2Ni eutectic. By decreasing the sintering temperature to 1200 K, the bending strength increased and the crack initiation occurred from the surface because the interface layer was thin and did not contain the brittle Ti-Ti2Ni eutectic. For the specimens with TiB2 dispersed TiNi surface layer that was sintered at 1273 K, the bending strength was larger than that of the specimens with TiNi surface layer because the interface layer does not contain the Ti-Ti2Ni eutectic and compressive residual stress generated in the surface layer during cooling process after SRS suppresses the crack initiation on the surface. The coating of TiB2 dispersed TiNi alloy onto titanium alloys by SRS provides strong interface to prevent delamination of the surface layer, strong surface due to residual compressive stress, and wear-resistant surface due to the existence of hard TiB2 particles and superelastic deformation of TiNi matrix.  相似文献   
72.
Modern industries require the production of multi-functional, inorganic, micron-sized metal wires. This study suggests a novel method that could potentially offer a highly efficient dieless drawing technology for manufacturing thin stainless steel fibers. The method is based on a hot-working principle, using microwaves as the heat source and SiC as the susceptor. Experimental trials with a laboratory rig showed that the new system worked effectively for drawing the stainless steel wires and should be able to realize the diameter attenuation with a diameter reduction of up to 21%. The theoretical model describing the deformation behavior of the stainless steel wires in the working zone along with the constitutive equation of Bingham model modified with a power law and Zener–Hollomon parameter turned out to match very good with the actual results of the experiment. The coefficient of variation of the drawn wire diameter increased, as the draw ratio increased, which could be attributed to the occurrence of the narrow necking zone.  相似文献   
73.
In this study the computerized tomography (CT) was first used to quantitatively analyze the failure of acrylate spray-applied waterproof membrane in the groundwater environment. The results of the CT tests show that it is feasible to use the CT to quantitatively analyze the failure of the waterproof membrane and the CT method has the advantages of speediness and accuracy that can eliminate the fussy operation process in routine tests. The main conclusions summarized from the study are as follows. First, the...  相似文献   
74.
叙述了低碳合金结构钢、不锈钢、镍基合金实芯焊丝拉拔过程中的热处理工艺选择;讨论了焊丝的热处理缺陷及防止措施。  相似文献   
75.
目前,燃煤电厂新、扩建工程同步脱硝已进入设计日程。其中脱硝效率应如何确定已成为首要课题,在脱硝效率确定以后,如何在采用SCR工艺时合理确定其安装和预留层数,尚存在争论,由于脱硝装置造价及运行成本中,催化剂均占主要部分,更成为重要课题之一。  相似文献   
76.
孙宁  程小华 《防爆电机》2011,46(3):28-30,43
定子绝缘层的瑕疵是电机故障的主要因素.异步电机的检测模型能够检测出少量绕组线圈的短路故障.借助卡尔曼滤波器模型对相电流进行分析,能够准确辨识出微小的短路电流,进而采取有效措施检测故障,防止事故的发生.  相似文献   
77.
某变电站地基条件相对较差,且存在膨胀土.设备支架地基原本采用CFG桩复合地基处理,但施工单位将CFG桩改为大直径桩,且人工成孔,设备基础施工完成后约半年,当设备安装完毕试送电时发现,设备基础周边地面有裂隙,支架倾斜,文中通过分析事故原因,进而讨论CFG复合地基处理的机理,并提出相应解决方案.  相似文献   
78.
Nb-doped SrBi4Ti4O15 (SBT) was produced by conventional method. Structural and ferroelectric properties of SBT were examined as a function of niobium composition. Analyzing the structure futures of SBT by XRD, XPS and Raman spectrum, Nb5+ substituted Ti4+ to form NbO6 octahedron and did not change the structure of SBT. The XRD patterns indicated the formation of the single phase of SBT for x = 0.01and 0.03 and secondary phase of Sr3Ti2O7 appeared when x > 0.1. To compare the effect of Nb doping, the ferroelectric properties (hysteresis loop, piezoelectric coefficient) of Nb-doped SBT were measured. The SBT doped with x = 0.15 was found to exhibit higher remanent polarization with d 33 = 17 pC/N.  相似文献   
79.
International Technology Roadmap for Semiconductors 2003 projected nano-imprint lithography has the potential of high throughput, sub-20 nm resolution, and low cost [S.Y. Chou, P.R. Krauss, P.J. Renstrom, Appl. Phys. Lett. 67 (1995) 3144; Science 272 (1996) 85, J.A. Rogers, C. Mirkin, Mater. Res. Bull. 26 (2001)]. For nano-imprint lithography, a template with 1X resolution is required. The existing industrial infrastructure for supporting deep ultra violet 4X photo masks by e-beam and/or a laser beam scanning writer does not offer pitch (center-to-center distance of an array of patterned lines) less than ∼60 nm [<http://public.itrs.net/2003ITRS>]. For nano-imprint lithography to be accepted across the industry, a reproducible simple fabrication process to make a high resolution, single emboss template is essential [L. Jay Guo, J. Phys. D: Appl. Phys. 37 (2004) R123-R141]. Here we show, a general fabrication method and fabricated nano-imprint templates with sub-15 nm template line width and 10 nm pitch length through out the entire 200 mm wafer, varying the deposition thickness of multiple alternate films, using atomic layer deposition. Although multilayer nano-imprint templates and their exciting use have been demonstrated, [W.J. Dauksher et al., J. Vac. Sci. Technol. B 22 (2004) 3306, B. Heidari, et al., The 49th international conference on electron, ion and photon beam technology and nanofabrication, Orlando, Florida, 2005, William M. Tong, et al., Proc. SPIE 5751 (2005) 46-55, N.A. Melosh, A. Boukai, F. Diana, B. Gerardot, A. Badolato, P.M. Petroff, J.R. Heath, Science 300 (2003) 112] such a small pitch was not shown and either complex lattice mismatch-based epitaxially grown films or unconventional etch chemistry was used. The bare necessity was a simple and economical fabrication process for a high throughput nano-imprint template. In that context, we have developed a template fabrication process using classical micro-fabrication techniques. Successful use of these techniques made the template fabrication process simple, economical, and expedient. Also a novel technique to provide flexible and accurate alignment for nanowire patterning has been described. In this technique, nanowire patterning is accomplished on the entire wafer with a single impression. Industry level batch-fabrication of our scheme illustrates its reproducibility and manufacturability. We anticipate, this simple, economical and time saving technique will help researchers and developers to perform their experiment on nano-scale feature patterned substrates easily and conveniently.  相似文献   
80.
李琦  张波  李肇基 《半导体学报》2007,28(8):1267-1271
提出一种带p埋层的表面注入硅基LDMOS高压器件新结构,称为BSI LDMOS(surface implanted LDMOS with p buried layer).通过表面注入n+薄层降低导通电阻,p埋层不但改善横向表面电场分布,提高击穿电压,而且增大漂移区优化浓度.求解电势的二维Poisson方程,获得表面电场和击穿电压的解析式,研究结构参数对表面电场和击穿电压的影响,数值与解析结果吻合较好.结果表明:与常规结构相比较,BSI LDMOS大大改善了击穿电压和导通电阻的折衷关系.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号