Oxidation behaviors of Ni-Cr-Al superalloy foams at 1 000 ℃ in air

The oxidation behaviors of Ni-16Cr-xAl （x=4.5%, 9.0%, mass fraction） superalloy foams in air at 1000℃ were investigated. The effects of AI content on the resistance to high temperature oxidation were examined. The oxidation mechanisms of the foams were discussed. The results show that the resistance to the oxidation of the Ni-16Cr-xA1 based alloy at 1 000 ℃ increases with the content of A1 increasing from 4.5% to 9.0%. Complex oxide products are formed on the surface of the superalloy foams after the oxidation. Cr203 and A1203 are the predominant oxides for the scales of the foams with 4.5% A1 and 9% A1, respectively. Excellent high temperature oxidation resistance and superior pore conformation stability for the Ni-16Cr-xA1 based superalloy foam with 9% A1 can be mainly attributed to the formation of relatively continuous and protective A1203 oxides on the surface of the foam.     

锅炉过热器/再热器管道热流密度的评估方法

通过建立数值模型进行编程计算,分析了锅炉过热器/再热器管道在不同的管道几何尺寸、烟气温度、蒸汽流量和温度下,各个界面热流密度的变化情况。通过回归分析得到了热流密度与管道内壁侧氧化层厚度和运行时间的关系表达式,即热流密度的评估关系式。     

金属化合物在分子筛上自发分散的研究进展

金属盐和氧化物在分子筛孔穴中及内外表面自发形成原子水平的分散,这种自发分散现象已被多种现代仪器分析所证实，并在国内外得到广泛认同。总结相关文献，结合部分研究工作，对金属化合物在分子筛上自发分散的研究作了综述。     

氧化亚铜微米晶的水热合成与生长机理

氧化亚铜是一种重要的P型半导体材料，目前因其独特的可见光催化性能在科研领域引起了广泛的重视。以CuSO4·5H2O为铜源，以α—D-葡萄糖为还原剂，并利用水热还原反应合成出了不同形貌的Cu2O微米晶。利用X射线粉末衍射分析（XRD）、透射电子显微镜（TEM）对合成的样品进行了形貌与结构的表征与分析。结果表明所合成的晶粒尺寸均匀且分散性好。讨论了不同条件下的晶粒生长机理，运用扩散机制与聚集机制解释了不同形貌的成因。     

Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP.     

电炉还原熔炼氧化钴矿的生产实践

介绍了刚果(金)钴铜冶炼厂电炉还原熔炼处理钴铜氧化矿工艺的设计特点及生产实践。     

Effects of La(NO_3)_3 Treatment on Photocattalytic Activity of TiO_2 Films Prepared by Micro-Arc Oxidation

Effects of La(NO_3)_3 Treatment on Photocattalytic Activity of TiO_2 Films Prepared by Micro-Arc Oxidation