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21.
采用Ni基自熔合金+块状WC混合粉末进行送粉激光熔覆并获得熔覆层,对熔覆层在不同温度下加热后空冷至室温,观察相应熔覆层的显微组织变化,结果表明:Ni基自熔合金+WC送粉激光熔覆层不适合在500℃~900℃再加热处理,再此温度区间对熔覆层再加热会导致块状WC出现裂纹。Ni基自熔合金基体的显微组织在700℃以上开始不稳定,发生形态和显微组织结构的变化。熔覆层中的块状WC加热至900℃以上时裂纹会被自行焊合,温度继续升高,块状WC会发生离散,分化成细小的WC颗粒,产生这种现象的根本原因是块状WC具有先天的超细纤维、颗粒混合结构。 相似文献
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报道了一种主要用作超高速光纤通信系统的新型半导体光源,即超高速10 GHz、多量子阱、主被动混合锁模的半导体激光器,其输出光波长可精确稳定在1550 nm,这对实现光时分复用技术高质量超短相干脉冲光源具有重要意义。 相似文献
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In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers. 相似文献
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本文分析了进口蕃茄酱生产线一效蒸发器的送料控制回路,并给出了实际生过程中解决问题的一条途径。 相似文献
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John W Cone Wilhelmina Clin-Theil Aart Malestein Arie Th van 't Klooster 《Journal of the science of food and agriculture》1989,49(2):173-183
The degradability of starch from various feedstuffs was investigated in vitro by incubation of 500-mg amounts in 50 ml of a 3:1 rumen fluid/buffer solution at 39°C for 6 h. The rumen fluid was obtained from one of three cows fed on hay or hay and concentrate. The degree of degradation after 6 h incubation varied strongly for the 23 feedstuffs investigated. The degradation of starch from the same feedstuff in rumen fluid from a hay-fed cow was significantly lower than in rumen fluid from a concentrate-fed cow. It seemed that differences in degradability between feedstuffs were not determined by the ration of the donor cow, but merely by the properties of the starch. Processed feedstuffs showed a higher degradation of their starch than the unprocessed feedstuffs, independent of the ration of the donor cow. Particle size influenced degradation, but not of the starch of tapioca meal. A fairly constant ranking in degradability between the various feedstuffs was found. Fermentation of mixtures of feedstuffs showed about the same rate of degradation as found for the single products. Only when great differences in the degree of degradability existed was the degradation of the total starch enhanced. The time of collection of rumen fluid strongly influenced the in-vitro degradation of starch. 相似文献
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Sridhar Govindaraju Jason M. Reifsnider Michael M. Oye Archie L. HolmesJr. 《Journal of Electronic Materials》2004,33(8):851-860
This article describes the effects of rapid thermal annealing (RTA) on the photoluminescence (PL) emission from a series of GaIn(N)As quantum wells. Indium compositions of both 20% and 32% were examined with nominal N compositions of 1% or 2%. The N location was varied within our quantum structure, which can be divided into three regions: (1) quantum well, (2) Ga(N)As spacer layers at the barrier-to-well interface and well-to-barrier interface, and (3) barriers surrounding each quantum well. Eight combinations of samples were examined with varying In content, Ga(N)As spacer layer thickness, N content, and N location in the structure. In the best cases, the presence of these Ga(N)As spacer layers improves the PL properties, due to annealing, with a reduction in the emission wavelength blueshift by ~400 Å, a reduction of the decrease in the full-width at half-maximum (FWHM) by ~5 meV, and a threefold reduction of the increase in integrated intensity. It was also observed that relocating N from the quantum wells to the barriers produces a comparable emission wavelength both before and after annealing. Our results further show that the composition of incorporated N in the material is most influential during the stages of RTA in which relatively small amounts of thermal energy is present from our lower annealing times and temperatures. Hence, we believe a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage that was incurred during its growth. However, the In composition in the quantum well is most influential during the latter stages of thermal annealing, at increased times and temperatures, where the wavelength blueshift was roughly independent of the amount of incorporated N. As a result, our investigations into the effects of RTA on the PL properties support other reports that suggest the wavelength blueshift is not due to N diffusion. 相似文献
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