Photoluminescence excitation spectroscopy of InAs0.67P0.33/InP strained single quantum wells

The optical emission characteristics of biaxially compressed InAs _x P_{1− x} /InP strained single quantum well (QW) structures, with nominal compositionx=0.67, have been investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. The highly strained QWs exhibit intense and narrow PL in the 0.9–1.5 μm wavelength range, similar to the lattice-matched InGaAs(P)/InP system. The 20 K PLE spectra exhibit well-resolved features attributed ton=1 heavy hole (E1H1) and light hole (E1L1) transitions in the 1.0–1.5 μm wavelength range. In addition, features attributed to transitions betweenn=2 electrons and heavy holes (E2H2), and betweenn=1 electrons and unconfined holes (E1Hf), were observed. The energy splitting between the heavy-hole and light-hole bands was found to be a sensitive measure of the band offsets in the system. The best prediction of this splitting was obtained for a valence band offset of δE _V ∼0.25δE _G . This value of band offset was in agreement with the energy position of the E1Hf transition. The observed transition energies were also compared with the results of a finite square well model, taking into account the effects of strain, and the results offer further support for the band offset assignment. This study indicates that the InAsP system may be advantageous for application in strained-layer optoelectronic devices operating in the 1.3–1.6 μm wavelength range.     

大牛地气田产气剖面特征的认识及思考

大牛地气田属典型的低孔、特低渗致密砂岩气藏,自上而下发育七套气层,2012年以前采用直井开发,之后采用水平井开发。为进一步明确水平井不同阶段的各段产气特征,不断优化压裂工艺及合理生产制度,选取部分有代表性直井和水平井,开展产气剖面测试。结果表明,气井生产是逐层段动用、接替开发的动态变化过程,其中多层合采的直井生产一定时间后,主力层会发生转变,渗透率、全烃含量和地质储量是影响转变的主要因素;水平井生产过程中,各段贡献率不一致,建议选取新投产水平井在投产90 d内、投产180～200 d各测试一次、之后每年测试一次,明确水平井全生命周期产出规律。     

鄂尔多斯盆地西部页岩油水平井井壁稳定技术

页岩油水平井储层段的井壁稳定至关重要,应用电镜扫描、X衍射、膨胀分散性实验及岩石力学测试等方法,对储层段泥岩矿物组构和理化性能进行了研究。结果表明,研究样品发育微裂隙,黏土含量高达62.24%,以伊利石为主,不含蒙脱石;呈现弱膨胀、弱分散、强亲油弱亲水的特征,在水基钻井液浸泡36 h后,抗压强度下降24.8%。基于以上研究,优化水基硅酸盐钻井液性能及配套措施,形成了页岩油水平井井壁稳定技术。东平1井水平段长625m,一趟钻顺利完钻。     

磨溪龙王庙组碳酸盐岩储层多尺度离散裂缝建模技术及其应用

在以大斜度井和水平井为主要开发井型的缝洞型碳酸盐岩气藏中,要想获取裂缝在井点不同空间位置的产状较困难,裂缝精细描述存在不准确性,这些均影响了对气藏渗流通道的刻画,制约了边水气藏的科学、均衡开发。以磨溪龙王庙组碳酸盐岩储层为例,利用岩心照片、FMI成像测井、叠前地震各向异性裂缝预测和不连续性检测以及动态监测等资料,在大斜度井、水平井裂缝定性识别的基础上,定量表征了裂缝产状、开度、密度、孔隙度等参数,再结合所获取裂缝参数建立多尺度非结构化网格离散裂缝模型,明确了气藏高、低渗区域分布,优势水侵通道和水侵方式。结果表明：在磨溪龙王庙组气藏离散裂缝模型中,大尺度和中小尺度裂缝均较发育,高渗区呈连片状广泛分布;发育于气藏外围4个方向的9条边水水侵的高渗通道,表现为沿裂缝水窜型和沿溶蚀孔洞均匀推进型2种水侵方式。该方法及研究结果对同类特大型超压有水深层碳酸盐岩气藏裂缝精细描述、水侵优势通道刻画和水侵模式建立等理论和技术研究均具有借鉴意义。     

某自动机供输弹机构动作协调性分析

为弄清某自动机供、输弹机构的设计思路和理论依据，从该自动机的工作原理出发，通过对其结构和运动特性的分析，提出了该自动机供、输弹机构运动的协调性原则；利用动量矩定理和拉格朗日方程，在有或无拨弹扭簧的情况下，对该自动机供弹机构的动力特性进行了计算，着重分析了该自动机所设置的扭簧在供、输弹机构运动协调中的重要作用，并探讨了该自动机和供弹机设计中可借鉴的技术措施。所得结论对研究导气式自动机具有借鉴作用。     

一种油气井用双向传爆管极限传爆距离

为评估油气井用双向传爆管在空气中的极限传爆距离(即在置信水平0.95下,可靠度为0.999的最大传爆距离),采用火工品常用的感度试验用数理统计方法——升降法,对双向传爆管进行传爆实验。用LS-DYNA软件进行了双向传爆管的传爆机理和爆炸过程的数值模拟。结果表明,在空气中,在0.95置信水平下,可靠度为0.999的双向传爆管的最大传爆距离为82.8 mm。数值模拟结果在一定程度上支持82.8 mm左右的实验结果。     

碳酸盐岩油藏高温超深井高导流自支撑酸化压裂技术

针对超深井酸化压裂改造形成的酸蚀裂缝易闭合、导流能力衰减快的问题,合成了新型酸化压裂屏蔽保护剂,并对其自聚性、油溶性、黏附性等关键指标进行了评价。该技术通过对水力裂缝表面非连续的、暂时性屏蔽,阻断酸岩反应,实现酸蚀裂缝由点支撑向面状支撑转变,裂缝有效支撑高度可提高3倍。采用CFD软件模拟优化了屏蔽保护剂颗粒在裂缝中的分布形态,确定了屏蔽保护剂用量、注入排量、携带液种类等工艺参数。该技术在塔河油田高温超深井进行了应用,压裂后效果表明,屏蔽剂在地层温度下黏附性、油溶性达到设计要求,自支撑裂缝的导流能力和有效期明显延长。该技术对提高超深井酸化压裂效果具有重要意义。     

Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching

Sapphire substrates patterned by a selective chemical wet and an inductively coupled plasma (ICP) etching technique was proposed to improve the performance of GaN-based light-emitting diodes (LEDs). GaN-based LEDs were fabricated on sapphire substrates through metal organic chemical vapor deposition (MOCVD). The LEDs fabricated on the patterned substrates exhibit improved device performance compared with the conventional LED fabricated on planar substrates when growth and device fabricating conditions were the same. The light output powers of the LEDs fabricated on wet-patterned and ICP-patterned substrates were about 37% and 17% higher than that of LEDs on planar substrates at an injection current of 20 mA, respectively. The enhancement is attributable to the combination of the improvement of GaN-based epilayers quality and the improvement of the light extraction efficiency.     

室温光荧光谱分析中的几个典型问题

根据光荧光谱的测试原理,针对具体的化合物半导体材料的层次结构,归纳、总结出两个实用的分析模型:光荧光谱的厚度干涉模型和透明衬底发光模型。应用厚度干涉模型,对GaN外延材料、带DBR结构的MQW材料的光荧光谱曲线进行了分析,并解释了AlGaInP LED结构PL扫描图的强度分布。应用透明衬底发光模型,分析并解释了InGaAs材料的发光强度图案。实验结果表明,这两个分析模型能很好地解释薄膜外延层的PL光谱曲线,能够分析光荧光谱的曲线形状和强度分布与材料结构及表面状态的关系,对判断材料品质有较大帮助,具有一定的实用价值。     

基于嵌入式处理器STM32的抽油机井实时监控系统设计

为了解决抽油机井生产过程中的实时监控问题,本文提出了一种基于嵌入式处理器STM32的抽油机井实时监控系统设计方案,并完成系统的软硬件设计.该系统能够测量抽油机并的油压、油温、三相电流电压、功率、有功、无功、功率因数以及示功图等参数,以此来实现对抽油机井的实时监控.系统各部分与上位机使用RS485总线连接,上位机通过Modbus协议与各模块通信.该系统具有操作简便、测量准确的特点,实现了数据的实时接收和远程监控功能.