An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

基于GPRS的油井自动化监控系统

介绍一种基于GPRS油井自动化监控系统的软、硬件实现方法。该方法已针对该系统的具体特点，在嵌入式设备中对TCP／IP协议栈进行了裁减。     

视频成像测井光缆传输系统井上电路设计

文章描述了一种基于FPGA实现的井上电路.该电路基于光缆传输机制,采用光模块完成光电转换,在FPGA内实现高速串行数据的数据恢复和曼彻斯特解码等处理,经视频模块处理后,完成对井下视频信息的恢复.其中,高速串行数据的数据恢复采用了过采样的处理方法.该电路结构简单、可靠性较高,与井下电路配合使用,可实现井下视频信号的可靠采集.     

小垂直发散角大光腔980nm单模InGaAs/GaAs/AlGaAs量子阱激光器

通过采用经过优化的新型大光腔结构,脊形波导980nm单模InGaAs/GaAs/AlGaAs多量子阱半导体激光器在保持大功率光输出的同时获得了较小的垂直发散角.结果表明波导中的光功率密度可以降低,获得了大于400mW、斜率效率0.89W/A的输出光功率,垂直方向远场发散角也降低到23°.     

量子阱材料折射率低偏振相关性研究

分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响,并剖析了其中的物理机理.研究表明:对于量子限制效应带来的量子阱折射率偏振相关性,阱宽越小或垒高越高,折射率偏振相关性越大.压应变增大时,折射率偏振相关性增大,张应变可以克服量子限制效应带来的折射率偏振影响.对于不同阱宽和垒高的量子阱,均存在合适的张应变量使折射率偏振相关性最小,且阱宽越小或垒高越高所需的张应变量越大.根据以上分析,提出量子阱材料折射率低偏振相关设计方法,并据此设计出C波段(1 530～1 565 nm)内折射率低偏振相关(小于0.03)的量子阱材料In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5.研究结果有助于优化设计光网络中关键器件.     

High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO₂ by Al (from Al_0.8Ga_0.2As) is employed to generate Si and O to effect layer disordering. The SiO₂-Al_0.8Ga_0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As₄ overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement Al_yGa_1−yAs-GaAs-In_xGa_1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In_0.1Ga_0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the Al_yGa_1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (I_th ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation.     

Terahertz Semiconductor Quantum Well Devices

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated. The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons. Background limited infrared performance (BLIP) operations are observed for all samples (three in total) ,designed for different wavelengths. BLIP temperatures of 17,13, and 12K are achieved for peak detection frequencies of 9.7THz(31μm) ,5.4THz(56μm) ,and 3.2THz(93μm) ,respectively. A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied. The δ-doping density for each period varies from 3.2 × 1010 to 4. 8 × 1010cm-2. We observe that the lasing threshold current density increases monotonically with doping concentration. Moreover, the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically. Interestingly the observed maximum lasing temperature is best at a doping density of 3.6 × 1010cm-2.     

Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces

The MOVPE overgrowth of high [0 1¯ 1]-oriented ridges confined at sides by facets related to {n 1 1} crystallographic planes is reported. We studied the influence of the side tilt on the thickness of the AlGaAs and GaAs epitaxial layers grown under the condition of the kinetic growth mode. The multi quantum well (MQW) structures were prepared on the sides of ridges tilted at 54.7°, 45° and 30° to (1 0 0). The sidewall surface morphologies before and after epitaxial growth were evaluated and compared. We observed no tendency towards planarization towards a neighbouring high-index crystallographic plane, such as (2 1 1) and (3 1 1). We also showed that the quantum wells of the MQW structure make a smooth transition over the edge between the top surface and the facet as both AlGaAs and GaAs grew at similar rates on the surfaces.     

YAG激光输出波形的时域整形技术

该文以实验为基础,结合理论分析,叙述了能够对YAG脉冲激光器的输出波形进行有效的时域整形的技术--慢调Q腔倒空方法。     

油气井用隔板起爆器的起爆能力

为了提高油气井用隔板起爆器的起爆能力,在传统隔板起爆器的基础上,改变了其受主装药盲孔的几何结构和受主装药结构,设计出一种油气井用隔板起爆器,并对其进行了起爆能力的实验研究.实验结果显示,油气井用隔板起爆器起爆油气井耐温传爆管的最大空气隙距离为85 mm,而传统隔板起爆器和油气井耐温传爆管分别为20 mm和65 mm,因...