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61.
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63.
陈海 《中国海上油气(工程)》2002,(4)
海上无人驻守简易平台设计是降低原油成本的重要手段之一,密闭循环涡轮发电机组(Closed Cycle Vapor Turbogenerator)是海上无人驻守平台上应用最可靠且低维护的远程发电系统。介绍CCVT这种发电机组,并讨论了在海上工程设计中需要考虑的问题,为今后简易平台上电站的选择设计提供参考。 相似文献
64.
为探索山丘地区中小型泵站技术改造的经验,选定南康县四个小型泵站作为泵站改造的试点站,进行现场测试,根据测试成果,分析各站存在的问题及效率偏低的原因,并拟定各站技术改造的措施,经实施后取得了较好的效果,本文就南康县泵站改造的实际效果阐明泵站改造的必要性及其改造过程中值得注意的问题。 相似文献
65.
An open‐cycle ocean thermal energy conversion (OC‐OTEC) system is one of the energy conversion methods used to generate electricity from ocean thermal energy. For the OC‐OTEC system, steam evaporated from the surface seawater due to flash evaporation drives the turbine. At that time, dissolved gas such as air is introduced into the low‐pressure system (OC‐OTEC system) as the noncondensable gas, which degrades the performance of condensation heat transfer. In this paper, a small‐scale OC‐OTEC experimental unit experimentally investigates the effect of noncondensable gas on the heat transfer performance in a condenser. The experimental results are discussed in comparison with theoretical estimation by the Sparrow–in method. It is shown that the condensation is occupied by heat and mass transfer near a condensation surface and that the condensation efficiency is affected by exhaust quantity of noncondensable gas at a relatively high concentration ratio of condensable gas. © 2005 Wiley Periodicals, Inc. Electr Eng Jpn, 154(1): 29–35, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20179 相似文献
66.
高分辨率层序地层学克服了岩性地层对比穿时的缺点.高分辨率层序地层对比是等时的高精度的地层对比,它满足了勘探开发中地层对比等时性和高分辨率的要求.测井资料的纵向分辨率较高,是高分辨率层序地层研究的重要资料.提出了利用测井相分析技术,从测井资料上识别出单井岩性和沉积微相剖面,结合测井曲线特征,划分单井基准面旋回,并进行连井地层等时对比,这为定量地进行高分辨率层序地层分析提供了一种方法.通过研究区实际资料的处理,验证了该方法的有效性. 相似文献
67.
Optimizing of laminar viscous flow through a pipe by two dimensionless values is investigated analytically. Dimensionless entropy generation and pumping power to heat transfer rate ratio are used as basis for constant viscous and the temperature dependence on the viscosity. For this matter we calculate entropy generation and pumping power for a fully developed in a pipe subjected to constant wall temperature for either constant viscosity and the variable viscosity. The variation entropy generation increase along the pipe length for viscous fluid is drawn, either the variation summation dimensionless entropy generation and the pumping power to heat transfer rate ratio are varying the fluid inlet temperature for fixed pipe length and are varying pipe length for fixed fluid inlet temperature are drawn. For low heat transfer conditions the entropy generation due to viscosity friction becomes dominant and the dependence of viscosity with the temperature becomes essentially important to be considered. 相似文献
68.
Johan M. Thevelein 《Yeast (Chichester, England)》1994,10(13):1753-1790
69.
报导一种全新冷却方式的双椭圆泵浦腔,具有较高的泵浦效率和光学均匀性。1.06μm调Q脉冲输出能量总转换效率η>0.75% 相似文献
70.
A compact analytical model for charge pumping (CP) is derived. It accounts for emission during the high and low gate bias levels and assumes instantaneous transition edges. This model, which does not apply on the top of the CP curves when using large gate voltage swings, where emission fully proceeds during the transitions edges of the gate signal, applies on all the other regions provided that the transition times of the gate signal are much shorter than the times at steady state biases. Therefore it holds at large bias swings on both edges of Elliot curves and at small bias swings on the whole Elliot curves provided that the interface traps are completely filled [1]. It is compared with the analytical model proposed by Wachnik and Lowney [2] in which emission is not accounted for at all. This model, which holds at Elliot curve maxima when small voltage swings are used, has been shown to be extremely useful for studying interface trap properties [1, 2, 3 and 4]. The CP model proposed primarily, that of Brugler and Jespers [5], is used as a reference. The model derived in this article very satisfactorily fits the experimental curves in the regions of large CP current where it holds. Discrepancies at low current levels are due to the well-known contribution of the transistor source and drain regions or could be due to edge effects. Comparing the different models and the experimental curves allows to evaluate emission and capture during different regions of the gate bias period. The three regions of CP response, depending on the gate voltage swing and involving or not emission and the full filling of the interface traps, are also evidenced. 相似文献