HB-3、HB-4型钴钼触媒升温硫化总结

总结了HB - 3,HB - 4型钴钼触媒升温硫化过程及注意事项 ,简单介绍了使用情况 ,并针对出现的问题采取了一定措施     

磁电雾化电晕放电低温等离子体及其应用

本文讨论了磁电雾化电晕放电低温等离子体技术的基本原理,以及它在静电除尘、烟气脱硫等环保生物工程等领域中的应用前景.     

Simultaneous Measurement of Viscosity and Density with an Oscillating-Disk Instrument: The Effect of Fixed Plates

The period and damping of the free motion of a body oscillating in a fluid depend on the fluid's viscosity and density. Commonly, a working equation which expresses the damping as a function of the viscosity and density is solved for the viscosity, the damping being measured and the density being treated as an independently supplied parameter. Another working equation exists for the period, and, in general, the period depends on a combination of the viscosity and the density which is linearly independent of the combination that appears in the damping equation. It is, therefore, in principle, possible to determine both the viscosity and the density by a simultaneous solution of the two coupled working equations, since the period also is measured. In this paper, the working equations that describe the oscillating-disk viscometer are reviewed and their simultaneous solution is considered. The effect of fixed plates symmetrically located above and below the oscillating disk is of specific interest. The paper's main result is that fixed plates can dramatically increase the independence of the damping and period working equations, so that it becomes indeed feasible to determine the viscosity and the density of a fluid simultaneously from the damping and period of oscillating motion. A price is paid, however, because the instrument's working equations when plates are present have multiple solutions. Under special conditions, these multiple solutions can coalesce, and then one can only deduce the viscosity from the damping equation if the density is known a priori.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

N-苄基丙烯酰胺的合成

以丙烯腈和苯甲醇为原料，浓硫酸作催化剂，合成了N-苄基丙烯酰胺（N-BAA）。考察了反应温度、反应时间和催化剂用量等因素对产物收率的影响，得出了最佳反应条件：n（丙烯腈）：n（苯甲醇）：n（浓硫酸）=3：1：1．2，反应时间3h，反应温度60℃。在最佳条件下，N-BAA的收率可达92％。每100g粗产物用10％氢氧化钠溶液提纯，精制产物纯度可达99．80％，熔点为64～65℃。通过红外光谱对产物结构进行了表征。     

数字电路中电源电压瞬间下降的成因及改进

通过分析数字集成芯片多输出中电源电压瞬间下降的原因,对常规驱动电路结构进行改进。改进后单输出电路的峰值电流降为原来的2/3,再通过优化版图的电源布线,能有效防止电源电压下降,使芯片正常稳定地工作。     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

用于磁场测量的高精度500A/30V零压开关直流稳流电源

研制了一种带有无源辅助网络的全桥移相脉宽调制零压开关(FB PSPWMZVS)高精度磁铁稳流电源,并在电磁铁磁场测量中得到应用,其电流稳定度在8h内优于±1×10-4。     

电磁发射兵器用电容器的选取

本文首先从理论上论述了膜电容器的储能密度与寿命之间的关系，对国际电容器制造水平和趋势进行了分析，提出采用干式金属化膜电容器作为储能元件。最后，根据电磁发射兵器整体寿命配合原则，提出高储能密度脉冲电容器的合理寿命指标。