利用梯度下降极小惯量法的脑中线偏离度算法

大脑受到创伤后往往会伴随着结构的移位,而脑中线的移位程度对医生预估脑内压强、脑疝等脑部创伤后并发症的重要标准。本文以两位脑创伤患者在接受治疗期间内的影响资料为对象,研究了用梯度下降的极小惯量法计算大脑的理想对称轴,并与患者的实际脑中线相比较,归一化后脑中线偏离度随时间变化的趋势图与临床的症状完全吻合,因而对医生的临床判断具有重要意义。     

基于类间距判据的高斯过程分类模型核参数选择方法研究

文中提出了一种基于类间距判据的高斯过程分类(GPC)模型核参数选择方法.将核参数作为自变量,类间距作为因变量,获得类间距随核参数变化的目标函数,然后采用共轭梯度法求取目标函数极值,最终获得核参数的最优值.实验表明,用DBTC作为判据进行核参数选择,分类正确率与原有参数选择方法基本相当,但GPC模型在进行参数选择时的耗时大幅减少,因而模型训练速度得到大幅提升.     

基于梯度与粗糙度的视频文本检测与定位

 本文提出一种视频文本检测和定位的新方法.利用差分图像像素行(列)的粗糙度特征和自适应阈值,实现对文本的快速检测.为进一步实现对文本的精确检测与定位,引入彩色梯度的方向信息,仅计算视频画面中少量关键特征点的梯度幅值,能够有效抑制图像复杂背景的干扰,同时显著提高了算法的效率.本方法对不同的视频画面质量、不同复杂程度的背景以及不同外观的文本是鲁棒的.通过对各类视频节目的大量实验验证了本文方法的有效性.     

基于聚集疑似目标的快速TBD弱小多目标检测方法

提出了一种无需复杂图像预处理的快速的自适应弱小多目标检测方法,适用于有背景起伏的低SNR的噪声随机分布的红外图像序列.采用线性滤波算子,直方图排序分割,快速目标聚集三个核心算法,实现了高速的TBD弱小目标检测.根据直方图进行梯度滤波的结果自适应地进行门限分割,然后剔除随机的不聚集的高梯度值噪声,最后进行时间低通滤波,减少虚警率和漏检率.通过对比实验,表明本文提出的先跟踪后检测的方法,在具有良好检测效果的同时,速度优于需要复杂形态学滤波或中值滤波的方法.     

Synthesis and growth of nonlinear infrared crystal material CdSe via seeded oriented temperature gradient solution zoning method

Single crystals of CdSe were grown by using seeded oriented temperature gradient solution zoning (STGSZ) method with the sizes of 20 mm in diameter and 80 mm in length. The crystals were characterized with X-ray diffraction, transmission spectrophotometer and infrared microscope. The transmission spectra showed that the infrared transmission is above 65% and the mean absorption was 0.01-0.04 cm-1 in the range of 2.5-20 μm.With 2.797 μm Cr, Er:YSGG laser as pumping source,experiments of optical parametric oscillator (OPO) were performed by using fabricated 5mm×5mm×30mm device crystal. The signal and idler wavelengths and the output average power were respectively 4.3 μm, 8 μm and 400 μJ. Optical-to-optical conversion efficiency was obtained by 12%.     

复杂场景下的自动红外舰船目标检测

为实现多种复杂海天背景下红外舰船目标的有效检测,提出了一种基于局部边缘梯度特征分析的舰船目标检测方法。利用红外舰船目标图像的特征,改进自适应 Butterworth 高通滤波对图像进行预处理。通过计算局部边缘梯度特征和聚类分析确定初始目标区域,比较梯度特征参数并进行多尺度搜索准确检测出舰船目标。对多种复杂海天场景红外图像进行仿真实验,结果表明,该算法能够有效准确地检测出多种复杂海天场景下的红外舰船目标,且算法简单,易于实现,适应面广。     

使用梯度相似度的激光干扰图像评估

提出一种基于梯度特征的图像质量评价算法(GSIM)。该算法通过比较原始图像和降质图像的亮度、对比度和清晰度信息, 得到归一化的图像质量评价指标。对Live数据库不同类型降质图像和实验采集的激光干扰图像的评价结果表明:与PSNR相比, GSIM算法的相关性方面提高了8.5%, 准确率提高了7.6%, 一致性提高了4.8%; 与SSIM算法相比, GSIM算法的相关性方面提高了1.5%, 准确率提高了3.8%, 一致性提高了2.6%。证明了提出的GSIM算法相对MSE、PSNR及SSIM算法能准确评价交叉失真图像质量, 评价结果更符合人的主观视觉感受。在评价基于掩盖效应的激光干扰图像时, GSIM算法能克服背景强度不一致带来的影响, 评价结果能准确反映激光干扰效果。     

Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications

The high-pressure electro-dynamic gradient (HP-EDG) crystal-growth technology has been recently developed and introduced at eV PRODUCTS to grow large-volume, semi-insulating (SI) CdZnTe single crystals for room-temperature x-ray and gamma-ray detector applications. The new HP growth technology significantly improves the downstream CdZnTe device-fabrication yield compared to earlier versions of the HP crystal-growth technology because of the improved structural and charge-transport properties of the CdZnTe ingots. The new state-of-the-art, HP-EDG crystal-growth systems offer exceptional flexibility and thermal and mechanical stability and allow the growth of high-purity CdZnTe ingots. The flexibility of the multi-zone heater system allows the dynamic control of heat flow to optimize the growth-interface shape during crystallization. This flexibility combined with an advanced control system, improved system diagnostics, and realistic heat-transport modeling provides an excellent platform for continuing process development. Initial results on large-diameter (140 mm), SI Cd_1−xZn_xTe (x=0.1) ingots grown in low temperature gradients with the HP-EDG technique show reduced defect density and complete elimination of ingot cracking. The increased single-crystal yield combined with the improved charge transport allows the fabrication of large-volume, high-sensitivity, high energy-resolution detector devices at increased yield. The CdZnTe ingots grown to date produced large-volume crystals (≥1cm³) with electron mobility-lifetime product (μτ_e) in the (3–7) × 10⁻³ cm²/V range. The lower-than-desired charge-transport uniformity of the HP-EDG CdZnTe ingots is associated with the high density of Te inclusions formed in the ingots during crystallization. The latest process-development efforts show a reduction in the Te-inclusion density, an increase of the charge-transport uniformity, and improved energy resolution of the large-volume detectors fabricated from these crystals.     

一种应用二维梯度容差开关方法的12比特电流型数模转换器

本文提出了一款集成于标准数字CMOS工艺的12比特精度电流型数模转换器。它是基于无校准6+6分段译码型结构设计的。本设计通过将高权重的单位电流管分成16个分布于阵列分离区域的小管,平均化线性梯度误差和平方误差,实现对其有效的抑制。本文还提出了一种新型的静态特性测试方法,芯片的测试结果显示：本转换器的DNL和INL分别为0.42LSB和0.39LSB,在100MHz时钟下达到了12比特分辨率。芯片工作电压为1.8V,其核心面积为0.28平方毫米。     

磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究

采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。