Light and Strong SiC Networks

The directional freezing of microfiber suspensions is used to assemble highly porous (porosities ranging between 92% and 98%) SiC networks. These networks exhibit a unique hierarchical architecture in which thin layers with honeycomb‐like structure and internal strut length in the order of 1–10 μm in size are aligned with an interlayer spacing ranging between 15 and 50 μm. The resulting structures exhibit strengths (up to 3 MPa) and stiffness (up to 0.3 GPa) that are higher than aerogels of similar density and comparable to other ceramic microlattices fabricated by vapor deposition. Furthermore, this wet processing technique allows the fabrication of large‐size samples that are stable at high temperature, with acoustic impedance that can be manipulated over one order of magnitude (0.03–0.3 MRayl), electrically conductive and with very low thermal conductivity. The approach can be extended to other ceramic materials and opens new opportunities for the fabrication of ultralight structures with unique mechanical and functional properties in practical dimensions.     

硅烷偶联剂对多孔硅的稳定化研究

为了将多孔硅应用于含能材料的制备,采用电化学双槽腐蚀法制备了平均孔径4.3 nm,厚度超过100μm的不龟裂多孔硅薄膜,利用硅烷偶联剂(KH550,KH560,KH570)对此多孔硅薄膜进行表面处理,采用红外光谱(FTIR)技术研究了三种硅烷偶联剂对多孔硅处理前后红外光谱的变化。结果显示,三种硅烷偶联剂均大大降低了多孔硅表面的Si—Hx键的数量,使不稳定的Si—H键转化成更加稳定的Si—OR键。其中KH550和KH570消除悬挂键的效果优于KH560。     

硅烷偶联剂稳定化处理的多孔硅/Pb3O4的反应性能

为了将多孔硅应用于新型含能材料,研究了经硅烷偶联剂稳定化处理的多孔硅/Pb3O4的反应性能。用电化学腐蚀法制备了多孔硅,用KH550、KH560和KH570改性了多孔硅,制成了10/90-多孔硅/Pb3O4点火药。用氧弹、DSC、TG、MS测定了多孔硅/Pb3O4点火药的反应性能,用XRD分析了多孔硅/Pb3O4点火药分解和燃烧后的残渣。结果表明:(1)经硅烷偶联剂KH550、KH560、KH570处理的多孔硅/Pb3O4点火药(样品2、样品3、样品4)的放热量低于未经硅烷偶联剂处理的多孔硅/Pb3O4点火药(样品1),但其放热峰温度未发生改变,表明硅烷偶联剂只影响多孔硅/Pb3O4点火药分解反应的动力学行为;(2)样品1～4燃烧热值的降低次序为样品2>样品3>样品4>样品1;(3)多孔硅/Pb3O4点火药分解和燃烧后的残渣为氧化铅和硅酸铅;(4)硅烷偶联剂KH550、KH560和KH570可使多孔硅在空气中的稳定性提高。     

Lightweight,Superelastic Boron Nitride/Polydimethylsiloxane Foam as Air Dielectric Substitute for Multifunctional Capacitive Sensor Applications

Porous polymeric foams as dielectric layer for highly sensitive capacitive based pressure sensors have been extensively explored owing to their excellent flexibility and elasticity. Despite intensive efforts, most of previously reported porous polymer foams still suffer from difficulty in further lowering the attainable density limit of ≈0.1 g cm^?3 while retaining high sensitivity and compressibility due to the limitations on existing fabrication techniques and materials. Herein, utilizing 3D interconnected networks of few‐layer hexagonal boron nitride foams (h‐BNFs) as supporting frameworks, lightweight and highly porous BN/polydimethylsiloxane composite foams (BNF@PDMS) with densities reaching as low as 15 mg cm^?3 and permittivity close to that of air are fabricated. This is the lightest PDMS‐based foam reported to date. Owing to the synergistic effects between BN and PDMS, these lightweight composite foams possess excellent mechanical resilience, extremely high compressibility (up to 95% strain), good cyclic performance, and superelasticity. Being electrically nonconductive, the potential application of BNF@PDMS as a dielectric layer for capacitive sensors is further demonstrated. Remarkably, the as‐fabricated device can perform multiple sensing functions such as noncontact touch sensor, environmental monitoring sensor, and high sensitivity pressure sensor that can detect extremely low pressures of below 1 Pa.     

Extreme Two‐Phase Cooling from Laser‐Etched Diamond and Conformal,Template‐Fabricated Microporous Copper

This paper reports the first integration of laser‐etched polycrystalline diamond microchannels with template‐fabricated microporous copper for extreme convective boiling in a composite heat sink for power electronics and energy conversion. Diamond offers the highest thermal conductivity near room temperature, and enables aggressive heat spreading along triangular channel walls with 1:1 aspect ratio. Conformally coated porous copper with thickness 25 µm and 5 µm pore size optimizes fluid and heat transport for convective boiling within the diamond channels. Data reported here include 1280 W cm^?2 of heat removal from 0.7 cm² surface area with temperature rise beyond fluid saturation less than 21 K, corresponding to 6.3 × 10⁵ W m^?2 K^?1. This heat sink has the potential to dissipate much larger localized heat loads with small temperature nonuniformity (5 kW cm^?2 over 200 µm × 200 µm with <3 K temperature difference). A microfluidic manifold assures uniform distribution of liquid over the heat sink surface with negligible pumping power requirements (e.g., <1.4 × 10^?4 of the thermal power dissipated). This breakthrough integration of functional materials and the resulting experimental data set a very high bar for microfluidic heat removal.     

3D Graphene Films Enable Simultaneously High Sensitivity and Large Stretchability for Strain Sensors

Integration of 2D membranes into 3D macroscopic structures is essential to overcome the intrinsically low stretchability of graphene for the applications in flexible and wearable electronics. Herein, the synthesis of 3D graphene films (3D‐GFs) using chemical vapor deposition (CVD) is reported, in which a porous copper foil (PCF) is chosen as a template in the atmospheric‐pressure CVD preparation. When the 3D‐GF prepared at 1000 °C (noted as 3D‐GF‐1000) is transferred onto a polydimethylsiloxane (PDMS) membrane, the obtained 3D‐GF‐1000/PDMS hybrid film shows an electrical conductivity of 11.6 S cm^?1 with good flexibility, indicated by small relative resistance changes (ΔR/R₀) of 2.67 and 0.36 under a tensile strain of 50% and a bending radius of 1.6 mm, respectively. When the CVD temperature is reduced to 900 °C (generating a sample noted as 3D‐GF‐900), the 3D‐GF‐900/PDMS hybrid film exhibits an excellent strain‐sensing performance with a workable strain range of up to 187% and simultaneously a gauge factor of up to ≈1500. The 3D‐GF‐900/PDMS also shows a remarkable durability in resistance in repeated 5000 stretching‐releasing cycles. Kinetics studies show that the response of ΔR/R₀ upon strain is related to the graphitization and conductivity of 3D‐GF which are sensitive to the CVD preparation temperature.     

3D Porous Cu Current Collectors Derived by Hydrogen Bubble Dynamic Template for Enhanced Li Metal Anode Performance

Lithium (Li) metal is the most ideal anode material for high‐energy density batteries. However, the high activity of Li metal, the large volume change, and Li dendrite formation during cycling hinder its practical application. Herein, 3D porous Cu synthesized through a simple time‐saving hydrogen bubble dynamic template method is used as a host for the improved performance Li metal anode. Contrary to the planar Cu foil, the synthesized 3D porous structure can reduce the local current density, suppress the mossy/dendritic Li growth, and buffer the volume change in the Li metal anode. Highly stable Coulombic efficiency is achieved at different specific current densities (0.5, 1, and 2 mA cm^?2) with a capacity of 1.0 mAh cm^?2. Moreover, symmetrical Li|Li‐3D Cu cells show more stable cyclic performance with a lower overpotential even at a high current density of 3 mA cm^?2.     

纳米复合含能材料的研究进展

对纳米复合材料的研究进展进行了综述,例举多种纳米复合材料的制备方法： sol-gel法、溶剂/非溶剂法、高能研磨法、多孔金属/填充物复合法.对这些制备方法及制品的性能进行了分析,认为纳米复合材料提供了研究含能材料的新角度,改进了纳米粉体含能材料储存使用过程的安全性,减轻了粒子团聚现象,有利于充分发挥材料的纳米特性.纳米复合含能材料的制备技术、制备工艺参数及制品结构对其性能的影响规律研究还处在探索阶段,今后还需理论和实践两个方面进行更加深入地分析、探讨.     

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Porous SiC (PSC) has been proposed as a buffer layer for reducing defects in epitaxial SiC layers. In this study, electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on a porous SiC substrate (SiC-on-PSC) have been compared to those simultaneously grown on a standard SiC substrate (SiC-on-STD). Schottky barrier diodes (SBDs) have been fabricated on both epitaxial layers and then investigated with temperature-dependent current-voltage (I-V), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements. The SBDs on both SiC-on-PSC and SiC-on-STD show about the same I-V and C-V characteristics, and at least four electron traps, i.e., B (0.75 eV), C (0.63 eV), D (0.40 eV), and E (0.16 eV), can be identically found in both SBDs by DLTS measurements. Thus, we conclude that the electrical quality of SiC-on-PSC is comparable to that of SiC-on-STD, and that the higher breakdown voltages observed in SBDs on SiC-on-PSC are not obviously related to a different defect structure.