极限工况下的管网“互联互通”改进方案

在全国天然气管道“主干互联、区域成网”(以下简称“互联互通”)基础格局逐渐形成的背景下,天然气管网规模日益扩大、管道分支和气源增加,并且分布不集中、输送方向可变,使得输气方案更加灵活,可以更好地解决某些地域的供气紧张问题;但受现有站场和设备的限制,暂不能满足某些多线组合极限工况,使得“互联互通”的初衷难以全部实现。为了使得现有的各输气干线在实现“互联互通”之后可以满足更多的多线组合工况,在分析“互联互通”背景下M管网工况变化的基础上,研发了可以进行水力仿真和压气站方案制订的计算软件,并对3种极限工况下的不同输气量情况进行了可行性试算,进而基于试算结果提出了相应的管网改进建议。研究结果表明:(1)经验证,软件计算误差满足要求;(2)在M管道某处增设压气站或在某些输气站场配置压缩机组;(3) M管网改进调整后,可以完成大部分的多线组合极限工况,真正实现“互联互通”的输气方案。结论认为,该研究成果有助于推进全国天然气管网早日实现“互联互通”。     

亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

水力旋冲钻井工具破岩影响因素模拟及应用

常规的冲击钻井工具不能满足井眼轨迹控制要求、使用寿命有限、缓解脱压不显著等问题,影响了在定向井钻井中的推广应用。建立ø215.9 mm PDC钻头和岩石的有限元模型,分析钻井参数对破岩效率的影响规律,结果表明:冲击频率为17.5 Hz和35 Hz时,破岩效率最优; 破岩效率随钻压增大而增加,而后变化逐渐平缓; 破岩效率随钻头转速增大而增加; 破岩效率随冲击载荷的增加变化平缓。据此研制了新型水力旋冲钻井工具。现场试验表明,该工具符合定向水平井“一趟钻”工艺要求,使机械钻速提高56%,使用寿命达150 h,MWD信号正常。     

论携号转网行为的私法规制

以电信用户入网协议为切入点,电信用户的携号转网行为应受到《合同法》《消费者权益保护法》等私法规范的保护与限制。该行为引起的格式条款解释、合同终止、违约责任、损失赔偿等问题,不能仅靠《电信条例》等公法规范来调整。应当积极引导广大消费者用户以私法领域相关规定为依据,转变争议解决思维,拓宽纠纷处理途径,合理选择维权手段,以保护自身合法民事权益,与行业监管部门共同推动电信行业有序发展。     

High-resolution FIB-TEM-STEM structural characterization of grain boundaries in the high dielectric constant perovskite CaCu3Ti4O12

In this work, the grain boundaries composition of the polycrystalline CaCu₃Ti₄O₁₂ (CCTO) was investigated. A Focused Ion Beam (FIB)/lift-out technique was used to prepare site-specific thin samples of the grain boundaries interface of CCTO ceramics. Scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectrometry (EDXS) and Electron Energy Loss Spectroscopy (EELS) systems were used to characterize the composition and nanostructure of the grain and grain boundaries region. It is known that during conventional sintering, discontinuous grain growth occurs and a Cu-rich phase appears at grain boundaries. This Cu-rich phase may affect the final dielectric properties of CCTO but its structure and chemical composition remained unknown. For the first time, this high-resolution FIB-TEM-STEM study of CCTO interfacial region highlights the composition of the phases segregated at grain boundaries namely CuO, Cu₂O and the metastable phase Cu₃TiO_4.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.