放射性同位素XRF技术中一种与“特散比”法等效的新方法

在一定的条件下,待测元素特征X射线和康普顿散射强度比值,与待测元素特征X射线强度和带吸收滤片所测量的强度比值之间有着简单的双曲函数关系。利用这一函数关系,很容易在单道携带式放射性同位素X射线荧光分析仪上实现“特散比”法改善基体效应。用这种方法所得到的分析结果和用“特散比”法得到的分析结果,二者吻合很好,而且不需要增加任何设备,节省了测量时间和成本。已经测量了几种类型的锡矿样品和某些铜矿样品。     

火花直读光谱仪在Sn-Sb-Cu系锡基合金中的分析应用

针对德国斯派克MAXx04型火花直读光谱仪,建立起Sn-Sb-Cu的分析程序,绘制各元素的工作曲线,增加类型标准化等,并对其精密度、准确度进行考查,应用火花直读光谱仪可满足Sn-Sb-Cu系锡基合金快速、准确分析的要求.     

水热法合成SnO2微球的酒敏特性研究

采用分析纯的SnCl4 ·5H2O和NaOH为起始原料,在160 ℃温度条件下水热法反应12 h得到SnO2微球.利用X射线衍射仪(XRD)、扫描电镜( SEM)对合成材料的结构、尺寸和形态进行了表征;采用静态配气法测试了材料的气敏性能.研究结果表明:在160 ℃水热条件下一步合成了均分散的SnO2微球,粒径大约为200 nm.用其制作的旁热式气敏元件在5 V工作电压下对0.005%的C2H5OH的灵敏度为8.7,达到了口腔酒精气体浓度检测限度0.008%的要求,并且响应-恢复特性良好.     

多层薄膜结构气敏效应研究

在SnO2气敏薄膜层上覆盖一层或多层钝化材料（SiO2,Al2O3) 薄膜，制成的多层膜气敏元件，可很好地排除大分子气体如乙醇等对小分子H2检测的干扰，使其具有单独检测H2的功能。本文还通过测量元件的升温曲线，推导出敏感体表面的氧吸附活化能；找出活化能与灵敏度、选择性的关系。根据实验现象和物性分析结果，试着探讨了元件的敏感机理。     

Influence of film thickness on the texture, morphology and electro-optical properties of indium tin oxide films

In the present study, the structural, electrical, and optical properties of indium tin oxide (ITO) films are reported as a function of film thickness (162-840 nm). The properties are discussed in terms of the (100) preferred orientation evolution with the increase of film thickness. This preferred orientation allowed accommodation of more oxygen vacancies, resulting in the increase of carrier concentration from 2.43 × 10²⁰ cm⁻³ to 7.11 × 10²⁰ cm⁻³ and therefore enhancing the electrical conductivity. The absorption in the infrared region was also found to increase with the increasing free carrier concentration, which was attributed to the plasma excitation. The X-ray photoelectron spectroscopy depth profile showed that the Sn⁴⁺ concentration did not change with film thickness. However, the oxygen concentration was decreased slightly after the thickness of the ITO films was increased to 100 nm, as the consequence of the formation of the (100) texture allowing the accommodation of more oxygen vacancies. The results show that the fabrication process can be manipulated to control the electrical properties and the infrared absorption of the sputtered ITO films.     

Scattering of phonons by vacancies

The scattering of phonons by vacancies is estimated by a perturbation technique in terms of the missing mass and the missing linkages. An argument is given why distortion effects can be disregarded. The resonance frequency of the defect is sufficiently high so that resonance effects can be disregarded for phonons in the important frequency range for thermal conduction. The theory is applied to the thermal resistance by vacancies in cases where the vacancy concentration is known: potassium chloride with divalent cations, nonstoichiometric zirconium carbide, and tin telluride.     

从零维到一维递变氧化锡纳米材料的可控制备

为了研究纳米半导体材料的量子限域效应与形貌和结构的关系,本文以SnCl4.5H2O和不同的有机酸以及不同的胺类有机物为反应物,通过溶剂热法制备了不同形貌的氧化锡纳米材料。在其它实验条件相同的前提下,通过配制不同的反应物体系,通过在同一反应体系中经过不同的溶剂热反应时间,均成功获得了从零维到一维递变的不同长径比的氧化锡纳米材料,包括纳米点、纳米棒、纳米线等。本文还尝试了在同一反应体系中使用不同的表面活性剂的方法,虽然没有获得从零维到一维递变的产物,但产物仍然具有不同形貌。     

反应合成银氧化锡电接触材料抗熔蚀性研究

采用反应合成技术和传统粉末冶金技术制备银氧化锡(AgSnO2)电接触材料，利用千瓦级CO2激光器模仿电弧作用在试样表面产生局部熔化。对AgSnO2块体材料进行抗熔蚀性测试，对块体材料及冷拉拔的AgSnO2线材进行显微组织分析(扫描电镜、透射电镜)。研究结果表明，采用反应合成技术可以在银基体中合成尺寸细小、界面新鲜的SnO2颗粒，制备AgSnO2电接触材料；用反应合成法制备的AgSnO2材料中，微米级的SnO2颗粒系由纳米级的SnO2颗粒聚集而成；用反应合成法制备的AgSnO2电接触材料由于改变了银和SnO2的结合状态使材料的抗熔蚀性得到改善和提高。     

低温烧结纳米掺杂Ag-SnO_2电接触合金放电性能研究

利用化学共沉淀、高能球磨技术及热压烧结等方法制备出Fe掺杂纳米复合Ag-SnO2电接触合金,测定了纳米复合电接触合金密度、硬度、电阻率、耐电压强度、耐烧蚀性等基本物理性能,运用扫描电镜(SEM)对电性能测试前后组织进行观察分析。结果发现,Fe元素的加入,细化了纳米SnO2;Fe掺杂含量越多,纳米氧化物粒度越小,纳米复合电接触合金组织也越细小均匀,纳米复合电接触材料硬度、电阻率、平均耐电压强度和电弧寿命上升,截流值降低;且Fe掺杂对纳米复合电接触合金电弧烧蚀速率有明显影响。     

Analysis on the interfacial properties of transparent conducting oxide and hydrogenated p-type amorphous silicon carbide layers in p-i-n amorphous silicon thin film solar cell structure

Quantitative estimation of the specific contact resistivity and energy barrier at the interface between transparent conducting oxide (TCO) and hydrogenated p-type amorphous silicon carbide (a-Si_1 − xC_x:H(p)) was carried out by inserting an interfacial buffer layer of hydrogenated p-type microcrystalline silicon (μc-Si:H(p)) or hydrogenated p-type amorphous silicon (a-Si:H(p)). In addition, superstrate configuration p-i-n hydrogenated amorphous silicon (a-Si:H) solar cells were fabricated by plasma enhanced chemical vapor deposition to investigate the effect of the inserted buffer layer on the solar cell device. Ultraviolet photoelectron spectroscopy was employed to measure the work functions of the TCO and a-Si_1 − xC_x:H(p) layers and to allow direct calculations of the energy barriers at the interfaces. Especially interface structures were compared with/without a buffer which is either highly doped μc-Si:H(p) layer or low doped a-Si:H(p) layer, to improve the contact properties of aluminum-doped zinc oxide and a-Si_1 − xC_x:H(p). Out of the two buffers, the superior contact properties of μc-Si:H(p) buffer could be expected due to its higher conductivity and slightly lower specific contact resistivity. However, the overall solar cell conversion efficiencies were almost the same for both of the buffered structures and the resultant similar efficiencies were attributed to the difference between the fill factors of the solar cells. The effects of the energy barrier heights of the two buffered structures and their influence on solar cell device performances were intensively investigated and discussed with comparisons.